• 한국표면공학회지
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• 제32권3호
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• 한국표면공학회지
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• 제40권1호
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• pp.23-31
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• 2007

The objective of this study is to investigate the effect of Al addition on the reaction behavior of cobalt with molten zinc. Pure cobalt specimen was immersion tested in the three kinds of molten zinc (pure, 0.12%Al added and 0.24%Al added) baths at $460^{\circ}C,\;490^{\circ}C\;and\;520^{\circ}C$. For the understanding of degradation processes, specimens were analyzed with scanning electron microscope (SEM) and energy dispersive spectrum (EDS), and electrochemical stripping method. When 0.12% and 0.24% Al was added in molten zinc baths, three intermetallic compounds layers of ${\gamma},\;{\gamma}_1,\;and\;{\gamma}_2$ were formed on the Co matrix and ${\beta}_1$ layer was not formed between the Co matrix and the ${\gamma}$ layer. Particles of CoAl intermetallic compound were formed at the interface between the ${\gamma}_2$ layer and zinc melt and they did not adhere to the Co-Zn intermetallic layer. Weight loss of the Co specimen increased as Al content in the molten zinc increased and the relationship of weight loss vs. immersion time followed parabolic rate law. Rate controlling process for the reaction rate of Co with Al added molten zinc was analyzed as the diffusion process of Al atom through a boundary layer between the ${\gamma}_2$ layer and the Al added zinc melt.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• 한국표면공학회지
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• 제57권3호
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• pp.140-154
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• 2024

As the trend towards miniaturization in semiconductor integration process, the limitations of interconnection metals such as copper, tungsten have become apparent, prompting research into the emergence of new materials like cobalt and emphasizing the importance of studying the corresponding process conditions. During the chemical mechanical polishing (CMP) process, corrosion inhibitors are added to the slurry, forming passivation layers on the cobalt surface, thereby playing a crucial role in controlling the dissolution rate of the metal surface, enhancing both removal rate and selectivity. This review investigates the understanding of the cobalt polishing process and examines the characteristics and behavior of corrosion inhibitors, a type of slurry additive, on the cobalt surface. Among the corrosion inhibitors examined, benzotriazole (BTA), 1,2,4-triazole (TAZ), and potassium oleate (PO) all improved surface characteristics through their interaction with cobalt. These findings provide important guidelines for selecting corrosion inhibitors to optimize CMP processes for cobalt-based semiconductor materials. Future research should explore combinations of various corrosion inhibitors and the development of new compounds to further enhance the efficiency of semiconductor processes.

• 한국자기학회지
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• 제2권1호
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• pp.8-14
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• 1992

${\gamma}-Fe_{2}O_{3}$ 입자의 보자력 특성을 향상시키기 위해 ${\gamma}-Fe_{2}O_{3}$ 입자표면상에 코발트 훼라이트를 결정화시켜 코발트 에피탁시얼 ${\gamma}-Fe_{2}O_{3}$ 입자를 제조하 였다. 피착층인 $Co_{x}Fe_{3-x}O_{4}$의 보자력은 x=1인 조성에서 가장 우수한 특성을 나타내었다. 반응 분위기를 초기 비산화성에서 산화성 분위기로 제어하여 제조한 시료의 자기 특성이 가장 우수하였으며 반응온도 $90^{\circ}C$에서 30분간 반응하면 ${\gamma}-Fe_{2}O_{3}$ 입자표면상에서의 코발트 훼라이트 피착 반응이 완료되었다.

• 전기화학회지
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• 제13권4호
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• pp.290-294
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• 2010

본 연구는 밀도 범함수 이론을 이용하여 Li이온전지에 사용되는 Li코발트 산화물에서의 Li이온 삽입 전압과 전도에 관한 것이다. Li이온은 Li코발트 산화물 원자구조의 각 층을 1개씩 채우거나 한 층을 다 채우고 다음 층을 채울 수 있다. 평균 삽입 전압은 3.48V로 동일하나, 전자가 후자보다 더 유리하였다. 격자상수 c는 Li농도가 0.25보다 작을 때는 증가하였으나, 0.25보다 클 때는 감소하였다. Li농도가 증가하면, Li코발트 산화물에서의 Li이온 전도를 위한 에너지 장벽은 증가하였다. Li이온전지가 방전 중 출력 전압이 낮아지는 현상은 Li농도 증가에 따른 삽입 전압의 감소와 전도 에너지 장벽의 증가로 설명할 수 있었다.

• 통합자연과학논문집
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• 제7권3호
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• pp.188-192
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• 2014

Determination of cobalt(III) ion with a perfluorinated sulfonated polymer-ethylenediamine (nafion-en) modified glassy carbon electrode is studied. It is based on the chemical reactivity of an immobilized layer, nafion-en, to yield complex $[Co(en)_3]^{3+}$. The reduction peak potential by differential pulse voltammetry (DPV) is observed at $-0.437{\pm}0.047$ V (vs. Ag/AgCl). The linear calibration curve is obtained in cobalt(III) ion concentration range $1.0{\times}10^{-8}{\sim}1.0{\times}10^{-3}M$ ($5.893{\times}10^{-12}{\sim}5.893{\times}10^{-5}g/mL$).

• 한국결정학회지
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• 제12권3호
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• pp.166-170
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• 2001

실리콘 기판에 도핑되어 있는 도판트는 종류에 따라 코발트와 실리콘 기판과의 반응에 영향을 준다. 인은 붕소나 비소에 비해 코발트와 실리콘과의 반응을 억제하여 저온 열처리 동안에 CoSi₂대신에 CoSi가 형성되도록 한다. CoSi층 내에서의 확산원소는 Si으로, CoSi 층은 Co/CoSi 계면에서 성장하며 반응에 참여하는Si 소모에 의해 생기는 기판의 빈 공간을 태우기 위해 Si 기판쪽으로 이동한다. 게이트 측벽에서는 접촉되어 있는 게이트 산화막과의 결합에 의해 CoSi층의 이동이 억제된다. 따라서 기판의 빈 공간을 태우지 못하게 되어 게이트 측벽 아래에 기공이 형성된다.

• 한국표면공학회지
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• 제23권3호
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• pp.150-159
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• 1990

The magnetic properties of electrodeposited iron and cobalt films on porous aluminum oxide film were examined. There exists perpendicular magnetic anisotropy due to the shape anisotropy. The coercivity and squareness ratio of films were strongly dependent on deposited particle diameter. The effect of packing fraction on squareness ratio was also apprecible. Unlike the iron-deposited films, the magnetic properties of cobalt films were changed by preferred orientation because of it's large crystal ansotropy constant.(about 10 times of Fe) The Fe deposited films were found to be more suitable for perpendicular magenetic recording media bacause perpendicular coercivity, squareness ratio and the ratio of perpendicular coercivity to horizontal ones of iron films are greater than those of cobalt films.

• 한국자기학회지
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• 제2권1호
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• pp.15-21
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• 1992

침상형의 ${\gamma}-Fe_{2}O_{3}$ 입자를 $Co^{+2}/Fe^{+2}$의 몰비가 0.5인 2가 금속혼합용액을 함유하는 알카리성 용액에서 $90^{\circ}C$로 가열하였다. 코발트 함량이 증가함에 따라 생성물의 보자력은 거의 직선적으로 증가하였으며 비표면적은 감소하였다. 코발트 훼라이트는 ${\gamma}-Fe_{2}O_{3}$ 결정 표면상에 에피탁시얼하게 성장되며, 보자력의 증가는 피착층인 코발트 훼라이 트의 결정 자기이방성에 기인하는 것으로 사료된다. 당량비 2이상에서 우수한 자기적 특성을 기대할 수 있 었으며 반응공정도 코발트 훼라이트 에피탁시얼 산화철의 보자력 특성에 영향을 미친다. $Co-{\gamma}-Fe_{2}O_{3}$의 온도 및 경시변화에 대한 안정성은 피착층 조성에 의해 크게 지배된다.