• KEPCO Journal on Electric Power and Energy
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• v.5 no.1
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• pp.11-15
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• 2019

Recently, the circuit-breaker rated voltage is getting higher as the transmission voltage increases. To increase the circuit-breaker rated voltage, a multi-break circuit-breaker which has two or more breakers in series is adopted. For multi-break circuit-breaker, a grading capacitor is used to mitigate the Transient Recovery Voltage(TRV) and control the voltage distribution across the individual interrupter units. However, all over the world, there are many failures such as mechanical damage, explosion due to insulation breakdown. Therefore, it is necessary to study the causes of failure and the new performance verification method. In this paper, we investigate the causes of dielectric breakdown of the grading capacitors in the KEPCO power system and propose the performance verification method.

• Journal of Power Electronics
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• v.16 no.1
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• pp.362-373
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• 2016

The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u_Ee) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• Proceedings of the KIPE Conference
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• 2013.11a
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• pp.89-90
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• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• ETRI Journal
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• v.31 no.3
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• The Transactions of the Korean Institute of Power Electronics
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• v.13 no.3
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• pp.196-205
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• 2008

A noble polarity inversion dc/dc power conversion circuit that has the high input-output voltage conversion ration characteristics is presented for high voltage DC power supply applications. The proposed circuit features the reduced voltage stresses of the component compared to those of the conventional ones. The operational principles of the proposed circuit is analyzed and comparative features are presented. The simulation results and experimental results are presented to verify the validity of the proposed circuit.

• Proceedings of the KIEE Conference
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• 2004.04a
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• pp.166-168
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• 2004

Conventional Switched Mode Power Supplies(SMPS) with diode-capacitor rectifier have distorted input current waveform with high harmonic order contents. Typically, these SMPS have a power factor lower than 0,7. To improve with this problem the power factor correction(PFC) circuit of power supplies has to be introduced. Specially, to the reduce size and manufacture cost of power conversion device, the single-stage PFC converter is increased to demand as necessary of study. In this paper, comparative analysis of Valley-fill, boost and feedforward type single stage power factor correction circuit based on the flyback converter is given. Also, the validity of designed three type of single stage PFC circuit are confirmed by simulation and experimental results.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.16 no.1
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• pp.43-47
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• 1980

The author designed and tested the high sensitive three-phase power factor meter and relay circuit, and dealt with the circuit to detect the phase of the current and the voltage. An operational amplifier comparator circuit and two single-phase transformers are used to control and detect the phase angle between the current and the voltage. The results obtained are as follows: 1. Converting the sine wave input current into the constant amplitude rectangular wave form by using a transistor chopper circuit, the power factor can be measured precisely over the load current of 0.08 A. 2. Using the moving coil type current meter, the power factor meter can be read in uniform . scale all over the range. 3. Using the three-phase power factor meter, the power factor relay which works at any power factor can be made.

• Proceedings of the KSR Conference
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• 1999.05a
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• pp.328-335
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• 1999

Three phase full bridge rectifier has been used to obtain dc voltage from three phase ac voltage source. The rectifier system has drawbacks that power factor is low and power flow is unidirectional. Therefore, when dc voltage increases due to regeneration of power the dynamic resister for dissipation of regeneration power must be installed. But three phase PWM converter can be controlled to operate with unity power factor and bidirectional power flow. Therefore when the PWM converter is used as do supply system, the dissipating resistor is not necessary. On this thesis, in order to design a controller having good performance, the hee phase PWM converter is completely modeled by using circuit DQ-transformation and thus a general and simple instructive equivalent circuit is obtained; the inductor set becomes a second order gyrator-coupled system and three phase inverter becomes a transformer as well. Under given phase angle(${\alpha}$) and modulation index(MI) of the three phase inverter, the dc and ac characteristics are obtained by analysis of the transformed equivalent circuit The validity of the equivalent circuit is confirmed through PSPICE simulation. And based on the dc and ac characteristics a controller with unity power factor is proposed.

• Journal of Power Electronics
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• v.12 no.6
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• pp.954-959
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• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.