• Title/Summary/Keyword: chip LED

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Life time test & Failure mode analysis of LED chip level for LCD back lighting unit (LCD BLU 광원용 LED chip level의 수명시험 및 고장모드 분석)

  • Park, Seung-Hyun;Lim, Sue-Hyun;Hwang, Nam;Cho, Young-Ick
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1556-1557
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    • 2007
  • LCD BLU에 광원의 수명을 측정하고, 고장모드를 분석하기 위해서는 광원을 구성하고 있는 각각의 성분 중에서 광원 자체를 구성하고 있는 R/G/B 광원에 대한 Burn-in test 및 고장모드를 분석하였다. LCD BLU에 있어서 R/G/B LED광원의 역할은 BLU 자체의 수명과 성능에 가장 큰 영향을 미친다. 서로 각각 사용조건하에서의 수명과 성능의 차이에 따라서 BLU 자체의 수명이 결정된다. 이를 평가가기 위해 LED device에 대한 가속수명테스트를 위한 Burn-in test를 실시하였으며, 발생한 고장모드를 분석하였다. 분석결과 누설전류 증가로 인한 불량이 주로 발생하였다. 누설전류 증가를 평가하기 위해 Photo emission microscope(PHEMOS-1000, MoDooTEK Inc.)을 이용하여 저전류에서의 LED chip의 누설전류에 의한 발광을 관찰함으로 인해, LED chip의 신뢰성 및 평가 기준이 됨을 알 수 있다.

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The Improvement for Performance of White LED chip using Improved Fabrication Process (제조 공정의 개선을 통한 백색 LED 칩의 성능 개선)

  • Ryu, Jang-Ryeol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.1
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    • pp.329-332
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    • 2012
  • LEDs are using widely in a field of illumination, LCD LED backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. To achieve high performance LEDs, one needs to enhance output power, reduce operation voltage, and improve device reliability. In this paper, we have proposed that the optimum design and specialized process could improve the performance of LED chip. It was showed an output power of 7cd and input supplied voltage of 3.2V by the insertion technique of current blocking layer. In this paper, GaN-based LED chip which is built on the sapphire epi-wafer by selective MOCVD were designed and developed. After that, their performances were measured. It showed the output power of 7cd more than conventional GaN-based chip. It will be used the lighting source of a medical equipment and LCD LED TV with GaN-based LED chip.

Measurement System for Phosphor Dispensing Shape of LED Chip Package Using Machine Vision (머신비전에 의한 LED Chip Package 형광물질 토출형상 측정)

  • Ha, Seok-Jae;Kim, Jong-Su;Cho, Myeong-Woo;Choi, Jong-Myung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.5
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    • pp.2113-2120
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    • 2013
  • In this study, an efficient machine vision based inspection system is developed for the in-line measurement of phosphor resin dispensing shapes on LED chip package. Since the phosphor resin (target material) has semitransparent characteristics, illuminated light beam is reflected from the bottom of the chip as well as from the surface. Since such phenomenon can deteriorate inspection reliability, a white LED and a 635nm laser slit beams are experimentally tested to decide suitable illumination optics. Also, specular and diffuse reflection methods are tested to decide suitable optical triangulation. As a result, it can be known that the combination of a white slit beam source and specular reflection method show the best inspection results. The Catmull-Rom spline interpolation is applied to the obtained data to form smoother surface. From the results, it can be conclude that the developed system can be sucessfully applied to the in-line inspection of LED chip packaging process.

Analysis of Cutting Characteristic of the Sapphire Wafer Using a Internal Laser Scribing Process for LED Chip (LED 칩 제조용 사파이어 웨이퍼 절단을 위한 내부 레이저 스크라이빙 가공 특성 분석)

  • Song, Ki-Hyeok;Cho, Yong-Kyu;Kim, Byung-Chan;Kang, Dong-Seong;Cho, Myeong-Woo;Kim, Jong-Su;Ryu, Byung-So
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.9
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    • pp.5748-5755
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    • 2015
  • Scribing is cutting process to determine production amount and characteristic of LED chip. So it is an important process for fabrication of LED chip. Mechanical process and conventional scribing process with laser source has several problems such as thermal deformation, decreasing of material strength and limitation of cutting region. To solve these problems, internal laser scribing process that generates void in wafer and derives self-crack has been researched. However, studies of sapphire wafer cutting by internal laser scribing process for fabrication of LED chip are still insufficient. In this paper, cutting parameters were determined to apply internal laser scribing process for sapphire wafer for fabrication of LED chip. Then, foundation of cutting condition was established to set up internal laser scribing system through investigation of cutting characteristics by several experiments.

A Light Characteristics of Mixed-Color LED for the Variable Color Temperature Street Light (가변색온도 가로등 구현을 위한 혼색LED의 조명특성)

  • Jeong, Byeong-Ho;Lee, Kang-Yeon;Choi, Youn-Ok;Kim, Dae-Gon;Kim, Nam-Oh;Min, Wan-Ki
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.2
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    • pp.142-147
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    • 2009
  • Conventional HP(high pressure) sodium or Metal-halide lamps have a life span of around one year requiring at least annual replacement and maintenance. High Power LED lights require no regular maintenance further increasing savings on replacement bulbs, access equipment and labour costs. New installations benefit from a substantial reduction in the cost of expensive heavy duty cable required for sodium lighting. Especially, LED light can achieve variable color temperature, high functional performance in the field of street light. There are two main method to achieve variable color temperature function of the street light. one method is using RGB multi-chip LED, the other is using Orange-White LED method. In this paper, it was compare RGB Multi-chip LED with white-orange LED for there characteristics performance.

A Study on Adhesive for High Efficiency LED Light Using Nano Silver

  • Kim, Sungsu;Park, Hyunbum
    • International Journal of Aerospace System Engineering
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    • v.1 no.1
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    • pp.44-47
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    • 2014
  • This study proposes a development for the nano silver adhesive, which is applicable to high efficiency LED(light-emitting diode) light. The important issue of LED light is heat exhaust from LED. Generally, the middle area of LED light is increased up to 380K. Therefore, the bottleneck between LED chip and heat sink are caused by high temperature. In this work, the adhesive material between LED Chip and heat sink was newly developed for improvement of bottleneck. The nano silver was adopted to solve heat problem of chip on board package for LED light. In order to evaluate the performance of the nano silver adhesive, the thermal analysis was performed. Moreover both adhesive performance and heat exhaust were verified through the prototype test. From the experimental test results, it is found that the developed nano silver adhesive has the high performance.

Process Capability Optimization of a LED Die Bonding Using Response Surface Analysis (반응표면분석법을 이용한 LED Die Bonding 공정능력 최적화)

  • Ha, Seok-Jae;Cho, Yong-Kyu;Cho, Myeong-Woo;Lee, Kwang-Cheol;Choi, Won-Ho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.10
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    • pp.4378-4384
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    • 2012
  • In LED chip packaging, die bonding is a very important process which fixes the LED chip on the lead frame to provide enough strength for the next process. This paper focuses on the process optimization of a LED die bonding, which attaches small zener diode chip on PLCC LED package frame, using response surface analysis. Design of experiment (DOE) of 5 factors, 3 levels and 5 responses are considered, and the results are investigated. As the results, optimal conditions those satisfy all response objects can be derived.

Thermo-ompression Process for High Power LEDs (High Power LED 열압착 공정 특성 연구)

  • Han, Jun-Mo;Seo, In-Jae;Ahn, Yoomin;Ko, Youn-Sung;Kim, Tae-Heon
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.4
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    • pp.355-360
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    • 2014
  • Recently, the use of LED is increasing. This paper presents the new package process of thermal compression bonding using metal layered LED chip for the high power LED device. Effective thermal dissipation, which is required in the high power LED device, is achieved by eutectic/flip chip bonding method using metal bond layer on a LED chip. In this study, the process condition for the LED eutectic die bonder system is proposed by using the analysis program, and some experimental results are compared with those obtained using a DST (Die Shear Tester) to illustrate the reliability of the proposed process condition. The cause of bonding failures in the proposed process is also investigated experimentally.

Implementation of LED BLU Using Metal core PCB with Anodizing Oxide Layer and Reflection Cup Structure (에노다이징 절연층과 반사컵 구조를 보유한 COB타입 LED BLU 광원구현)

  • Cho, Jae-Hyun;Lee, Min-Soo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.8
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    • pp.8-13
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    • 2009
  • LED BLU(Back Light Unit), based on MCPCB(Metal Core Printed Circuit Board) with anodizing oxide dielectric layer and improved thermal dissipation property, are presented. Reflecting cups were also formed on the surface of the MCPCB such that optical coupling between neighboring chips were minimized for improving the photon extraction efficiency. LED chips were directly attached on the MCPCB by using the COB (Chip On Board) scheme.

Numerical Investigation of Purcell Enhancement of the Internal Quantum Efficiency of GaN-based Green LED Structures

  • Choi, Young-Hwan;Ryu, Guen-Hwan;Ryu, Han-Youl
    • Current Optics and Photonics
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    • v.1 no.6
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    • pp.626-630
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    • 2017
  • GaN-based green light-emitting diode (LED) structures suffer from low internal quantum efficiency (IQE), known as the "green gap" problem. The IQE of LED structures is expected to be improved to some extent by exploiting the Purcell effect. In this study, the Purcell effect on the IQE of green LED structures is investigated numerically using a finite-difference time-domain simulation. The Purcell factor of flip-chip LED structures is found to be more than three times as high as that of epi-up LED structures, which is attributed to the high-reflectance mirror near the active region in the flip-chip LED structures. When the unmodified IQE is 20%, the relative enhancement of IQE can be greater than 50%, without utilizing the surface-plasmon coupling effect. Based on the simulation results, the "green gap" problem of GaN-based green LEDs is expected to be mitigated significantly by optimizing flip-chip LED structures to maximize the Purcell effect.