• Journal of Electrochemical Science and Technology
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• v.9 no.1
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• pp.20-27
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• 2018

We describe a redox-enhanced electric double-layer capacitor (EDLC) that turns the electrolyte in a conventional EDLC into an integral, active component for charge storage-charge is stored both through faradaic reactions with soluble redox-active molecules in the electrolyte, and through the double-layer capacitance in a porous carbon electrode. The mixed-redox electrolyte, composed of vanadium and iodides, was employed to achieve high power density. The electrochemical reaction in a supercapacitor with vanadium and iodide was studied to estimate the charge capacity and energy density of the redox supercapacitor. A redox supercapacitor with a mixed electrolyte composed of 0.75 M NaI and 0.5 M $VOSO_4$ was fabricated and studied. When charged to a potential of 1 V, faradaic charging processes were observed, in addition to the capacitive processes that increased the energy storage capabilities of the supercapacitor. The redox supercapacitor achieved a specific capacity of 13.44 mAh/g and an energy density of 3.81 Wh/kg in a simple Swagelok cell. A control EDLC with 1 M $H_2SO_4$ yielded 7.43 mAh/g and 2.85 Wh/kg. However, the relatively fast self-discharge in the redox-EDLC may be due to the shuttling of the redox couple between the polarized carbon electrodes.

• The Journal of the Korea institute of electronic communication sciences
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• v.4 no.4
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• pp.301-305
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• 2009

Pt nanoparticles with a narrow size distribution (dia. ~4 nm) were synthesized via an alcohol reduction method and used for the fabrication of hybrid Pt-$SiO_2$ nanoparticles. Also, the self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices. In addition, it was tried to show the control of thin-film thickness of hybrid Pt-$SiO_2$ nanoparticles indicating the possibility of much applications for the MOS type memory devices.

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.108-111
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• 2007

A novel voltage sag compensator with hi-directional DC/DC converter of Electric double layer capacitor is proposed. Recently, the double-layer capacitor which is drawn attention as a new energy storage element has a lot of advantage such as no maintenance, long lifetime and quick charge/discharge characteristics with large current. This DC/DC converter is used to control the charging current to the double-layer capacitor and also used to keep the DC link voltage constant for discharge of the double-layer capacitor. Therefore, the proposed DC/DC converter has the high-efficiency controller, dynamic compensator of voltage sag is driven by this converter. Finally, experimental results show the validity of the control scheme and the ability of the dynamic voltage compensator.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2899-2904
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• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.1
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• pp.90-100
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• 1993

A finite element formulation of vibration control of a laminated plate with piezoelectric sensor/ actuators is presented. Classical lamination theory with the induced strain actuation and Hamilton's principle are used to formulate the equations of motion of the system. The total charge developed on the sensor layer is calculated from the direct piezoelectric equation. The equations of motion and the total charge are discretized with 4 node, 12 degrees of freedom quadrilateral plate bending elements with one electrical degree of freedom. The mass and stiffness of the piezoelectric layer are introduced by treating them as another layer in laminated plate. Piezoelectric sensor/actuators are distributed, but discrete due to the geometry of electrodes. By defining an i.d. number of electrode for each element, modelling of electrodes with variable geometry can be achieved. The static response of a piezoelectric bimorph beam to electrical loading and sensor voltage to given displacement are calculated. For a laminated plate under the negative velocity feedback control, the direct time response by the Newmark-.betha. method and damped frequencies and modal damping ratios by modal state space analysis are derived.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.994-995
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• 2008

It is possible to suppress voltage drops, power loading fluctuations and regeneration power lapses for DC railway systems by applying an energy storage system. A electric double layer capacitor (EDLC) of the rapid charge/discharge type has been developed and used in wide ranges. It has a long life, high efficiency and maintenance free/low pollution features as a new energy storage element. In this paper, an efficient charge and discharge control method of a bidirectional DC-DC converter using the supercapacitor is proposed.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.97-99
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• 2008

It is possible to suppress voltage drops, power loading fluctuations and regeneration power lapses for DC railway systems by applying an energy storage system. Recently the electric double layer capacitor (EDLC) of the rapid charge/discharge type has been developed and used in wide ranges. The on board energy storage system with supercapacitor for railway vehicles presented in this paper seems to be a reliable technical solution with an enormous energy saving potential. In this paper, an efficient charge and discharge control method of a bidirectional DC-DC converter using the supercapacitor is proposed.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.3
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• pp.288-292
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• 2010

Recently, in energy storage system, the EDLC is paid attention as a new environmentally friendly energy storage element. This capacitor has higher energy density than the electrolytic capacitor. Also, this capacitor has a lot of advantage such as no maintenance, longer life cycle and faster charge-discharge time than the battery system. But the EDLC must have a each charge-discharge controller to effectively control, an energy design method circuit to use effectively energy, and several compensation techniques to control a optimal operating. In this respect, this study suggests major parameters to effectively represent the characteristics of EDLC, the measurement methods of those parameters have been investigated with experiments, and the interpretation about the buck/boost DC/DC converter for the operation of EDLC.