• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1269-1271
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• 2008

We find some array mura are caused by S/D bridge or channel open in 4 mask process. The gray tone PR thickness non-uniformity is the main reason of these defects. By the adjustment of exposure and dry etch parameters, S/D bridge and channel open ratio drops by 10.87%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.39-39
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• 2009

We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher $I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness.

• 연구논문집
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• s.31
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• pp.135-147
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• 2001

The wall-thickness of insulated pipelines can be easily evaluated by measuring the gamma-ray transmission intensity because this intensity is inversely proportional to the thickness of insulated pipeline. The main purpose of this study is to develop the nondestructive and filmless on-line inspection system of corrosion by measuring the wall thickness of insulated pipeline. The inspection system is constructed with radioisotope, 64 channel photo diode array detector, crawler system and data taking and operating software. The traditional off-line radiographic method carried out by exposing film cassettes can be replaced by this cost-effective on-line digital imaging method and the application will be greatly expected especially in the chemical and petrochemical industries.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.9 s.240
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• pp.1169-1174
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• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.96-101
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• 2004

In order to measure the retina thickness, there are to need the 3-D retina photographing and the high speed signal processing system. In this paper, we introduced the retina photographing system and the 16-channel high speed image data acquisition system. There are able to measure the retina thickness with sensing image the returned laser signal to APD sensor after there were projected the HeNe laser on retina. We developed the laser projection system to sense a reflected image of the retina using APD sensor, the 16-channel high speed A/D converter and PCI master interface card for image transmission into computer.

• Journal of the Korean Society of Mechanical Technology
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• v.20 no.6
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• pp.858-864
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• 2018

Graphene oxide (GO) laminate is a new promising material for water purification system, which has extraordinary permeability only for water molecule. It consists of numerous nano-channels, in which water molecules could be nano-confined, resulting in slip of the molecules for very fast transportation speed. In this study, water penetration rate via different thickness of GO membrane according to driven pressures are measured experimentally, so that speed of water molecules and permeability are evaluated. Generally, water penetration rate via a membrane with macroscopic-sized channel increases linearly with pressure difference between up and bottom side of the membrane, but that via GO membrane approaches asymptotic value (i.e. saturation) as like a log function. Moreover, the permeability of GO membrane was observed in inverse proportion to its thickness. Based on the experimental observations, a correlation for volume flux via GO membrane was suggested with respect to its thickness and external pressure difference.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.4
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• pp.804-810
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• 2005

An analytical subthreshold swing (SS) model has been presented for double gate MOSFET(DGMOSFET) in this study. The results calculated by this model are more precise for about 10nm channel length and thickness than those derived from the previous models. The results of this model are compared with Medici simulation to varify the validity of this model, and good agreementes have been obtained. The changes of SS have been investigated for various channel lengths, channel thicknesses and gate oxide thicknesses using this model, given that these parameters are very important in design of DGMOSFET. This demonstrates that the proposed model provides useful data for design of nano-scale DGMOSFET. It is Known that the SS is improved to smaller ratios of channel thickness vs channel length and is smaller in very thin oxides. New gate dielectric materials with high permittivity have to be developed to enable design of nano-scale DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.825-828
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• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.