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Analysis of Nonniformity of Residual Layer Thickness on UV-Nanoimprint Using an EPS(Elementwise Patterned Stamp)

EPS(Elementwise Patterned Stamp)를 이용한 UV 나노임프린트 공정에서 웨이퍼 변형에 따른 잔류층 분석

  • 김기돈 (한국기계연구원 지능형정밀기계연구부) ;
  • 심영석 (한국기계연구원 지능형정밀기계연구부) ;
  • 손현기 (한국기계연구원 첨단산업기술연구부) ;
  • 이응숙 (한국기계연구원 지능형정밀기계연구부) ;
  • 이상찬 (목포대학교 기계 해양시스템공학부) ;
  • 방영매 (목포대학교 기계 해양시스템공학부) ;
  • 정준호 (한국기계연구원 지능형정밀기계연구부)
  • Published : 2005.09.01

Abstract

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

Keywords

References

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