• 한국재료학회지
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• 제22권5호
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.73-78
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• 2007

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

• 한국전기전자재료학회논문지
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• 제28권4호
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• pp.257-261
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• 2015

In this study, we fabricated a thermoelectric module made of nanoparticles (NPs) and glass fibers investigated its thermoelectric characteristics. P-type HgTe and n-type HgSe NPs synthesized by colloidal method were used as thermoelectric materials and glass fibers were used as spacers between the hot and cold electrodes of the thermoelectric module. In the module, the average Seebeck coefficients of the HgTe and HgSe NPs were 1260 and $-628{\mu}V/K$, respectively. The p-n module generated about a voltage of 11.9 mV and showed a power density of $1.6{\times}10^{-5}{\mu}W/cm^2$ at a temperature difference of 7.5 K.

• Journal of Electrochemical Science and Technology
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• 제10권3호
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• pp.313-320
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• 2019

In this study, cobalt diselenide ($CoSe_2$) and the composites ($CoSe_2@RGO$) of $CoSe_2$ and reduced graphene oxide (RGO) were synthesized by a facile hydrothermal reaction using cobalt ions and selenide source with or without graphene oxide (GO). The formation of $CoSe_2@RGO$ composites was identified by analysis with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and scanning electron microscopy (SEM). Electrochemical analyses demonstrated that the $CoSe_2@RGO$ composites have excellent catalytic activity for the reduction of $I_3{^-}$, possibly indicating a synergetic effect of $CoSe_2$ and RGO. As a consequence, the $CoSe_2@RGO$ composites were applied as a counter electrode in DSSC for the reduction of redox couple electrolyte, and exhibiting the comparable power conversion efficiency (7.01%) to the rare metal platinum (Pt) based photovoltaic device (6.77%).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.215-215
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• 2010

The feasibility of InSbTe (IST) chalcogenide materials prepared by metalorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below $225^{\circ}C$ exhibited an amorphous structure, and the films grown at $300^{\circ}C$ Cincluded various crystalline phases such as In-Sb-Te, In-Sb, In-Te, and Sb-Te. The composition of the amorphous films grown at $225^{\circ}C$ was dependent on the working pressure. Films grown at $225^{\circ}C$ exhibited a smooth morphology with a root mean square(rms) roughness of less than 1nm, and the step-coverage of the films grown on a trench structure with an aspect ratio of 5:1 was greater than 90%. An increase in deposition time increased the filling rate, while retaining the conformal step-coverage. Films grown at $225^{\circ}C$ for 3h in a working pressure of $13{\times}10^2$ Pa exhibited a reproducible and complete filling in a trench structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.374-381
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• 2024

이 논문은 단파 길이 적외선(SWIR) 영역에서의 활용을 중점적으로 다루며, 실버 황화물(Ag₂S) 나노 구조의 합성과 광학적 특성에 대해 제시한다. SWIR 영역은 생체 조직에 미치는 손상이 감소하고 광학적 투명성이 향상되는 등의 장점을 제공하여 다양한 분야에서 활용되고 있다. 연구는 세 가지 다양한 합성 방법을 소개하며, 각각의 방법을 통해 다양한 광학적 특성을 갖는 나노 입자를 얻을 수 있음을 보여준다. 이러한 연구 결과는 Ag₂S 나노 입자의 크기와 리간드를 조절함으로써 감지, 이미징 및 기타 응용 분야에서의 맞춤형 솔루션을 제공하는 가능성을 열어 놓는다. 이 논문은 SWIR 영역에서 활용 가능한 Ag₂S에 대한 새로운 통찰력을 제공하며, 이를 통해 미래 기술의 발전을 촉진할 것으로 기대된다.

• Journal of electromagnetic engineering and science
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• 제10권3호
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• 한국자기학회지
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• 제15권2호
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• pp.137-141
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• 2005

Spinel계 유화물 $Zn_xFe_{1-x}Cr_2S_4$(x=0.05, 0.1, 0.2)에 대하여 X선 회절법, 자기저항측정, $M\ddot{o}ssbauer$ 분광법을 이용하여 CMR 특성과 자기적 성질을 연구하였다. 결정구조는 상온에서 입방정으로 정상 spinel 구조를 갖는 것으로 나타났다. 자기저항 실험결과 160K 부근 이하에서는 반도체적 전기전도 특성을 보이며, Curie 온도부근에서 최대자기저항 온도가 나타났다. Zn 조성값이 증가함에 따라 Jahn-Teller 효과에 의한 완화 현상이 증가되었으며, 전기 사중극자 이동값 역시 증가되고, 초미세 자기장값은 감소하였다. CMR 특성은 heterovalency에 의한 이중교환 상호작용이나, $Fe^{2+}$와 $Cr^{3+}$ 그리고 $Fe^{3+}$ 사이의 삼중교환 상호작용과는 다른 동적 Jahn-Teller 효과에 의한 도체-반도체전이와 절반 금속성 에너지 밴드구조에서 스핀전자 전이에 의하여 발생되는 것으로 예측된다.