• Korean Journal of Materials Research
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• v.23 no.9
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• Journal of the Korean Graphic Arts Communication Society
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• v.11 no.1
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• pp.103-122
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• 1993

A cause and counterplan of the increase in dark decay rate of$\varepsilon$-CuPc/PVCz photoreceptor which is consist of the carrier generation layer (CGL) of$\varepsilon$type copper phthalocyanine ($\varepsilon$-CuPc) thin film by an aqueous coating method and the carrier transport layer (CTL) of polyvinylcarbazol (PVCz) by spin coating, are studied in this paper. Electrochemical deposition of CGL was accompanied by an increase in work function of the aluminium substrate during the processes and the enhanced work function 5.3 eV rose above the ionization potential 5.16 eV of $\varepsilon$-CuPc. This resulted in the increased injection of holes from substrate into CGL and a fast dark decay rate. Improved photoreceptor, an electron-transport $\varepsilon$-CuPc/TNF photoreceptor, led to lowing of dark decay rate and increasing of photosensitivity. The carrier generation efficiency (ηg), carrier injection efficiency (ηi) and xerographic gain (G) of the $\varepsilon$-CuPc/TNF photoreceptor were obtained by XTOF method and PIDC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.107-107
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• 2011

오늘 날 transparent conductive oxide는 다양한 분야에서 활용되고 있다. 최근에는 태양전지 분야에서도 많이 활용되고 있으며, 초기에는 transmittance 및 낮은 sheet resistance 특성을 가지는 ITO가 많이 활용되었지만 thin film solar cell와 같이 hydrogenation 공정에 약한 ITO보다는 Al-doped ZnO가 사용되기 시작하면서 많은 연구가 진행되고 있다. 본 연구에서는 thin film solar cell 및 silicon heterojunction solar cell에 적용 가능한 Al-doped ZnO에 관한 연구로써 a-Si:H의 Si-H bonds에 영향을 주지 않는 낮은 영역의 substrate temperature와 power로 Al-doped ZnO를 형성하고 상기 parameter에 따른 Al-doped ZnO의 특성 변화에 대해서 분석하였다. 특히 substrate temperature가 변화할수록 carrier concentration 및 sheet resistance가 많은 변화를 보였으며 이로 인하여 transmittance 특성이 온도에 따라 좋아지다가 너무 높은 온도에서는 오히려 좋지 않게 되었다. 이는 너무 높은 carrier concentration은 free carrier absorption에 의해 transmittance 특성을 오히려 좋지 않게 한다. 우리는 본 연구를 통해 92.677% (450 nm), 90.309% (545 nm), 94.333% (800 nm)의 transmittance를 얻을 수 있었다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.6 no.1
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• pp.51-57
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• 1981

Carriers moving in a semiconductor can impart gain or loss to an acousic wave traveling through Piezo-electric materials. In this paper, surface a coustic wave amplifiers, which employ the interaction between carriers drifting in a semiconduct or film and electic fields accompanying a Rayleigh wave propagating on a Piezoelectric substrate, are described. The effect of various electromagnetic boundary condition on th propagation of surface waves in Piezoelectrics is considered. An expression for the dependence of surface wave velocity on electic boundary conditions is derived. Calculations show that, for properly prepared material, significant amplification is expected up to the microwave frequencies. At high frequencies, gain is reduced because electro diffusion smooths out the electron bucning necessary for amplification.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.825-827
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• 2012

In this study, the variation in surface morphology of copper phthalocyanine (CuPc) thin films treated with a flow of acetone vapor assisted by nitrogen carrier gas was investigated. The CuPc nanorods with similar dimensions were well dispersed throughout the whole film surfaces after ~20 min. of treatment. However, the electronic absorption spectra only changed slightly, which indicates that molecular stacking was not altered during treatment. This treating method is simple and more advantageous compared to other solvent treating technologies such as mixed solvent spray treatment using organic solvents and water since it requires relatively mild treating conditions and does not need the presence of water.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.707-710
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• 2006

Zinc oxide (ZnO) is typically highly doped n-type semiconductor. To be used for thin-film transistor (TFT) devices, carrier concentration must be controlled precisely. We studied characteristics of ZnO grown by MOCVD at temperatures between $200^{\circ}C$ and $400^{\circ}C$. We found that hydrogen incorporated during growth plays important role in determining carrier density.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.