• 마이크로전자및패키징학회지
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• 제26권2호
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• pp.15-21
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• 2019

원자층 증착법(ALD: atomic layer deposition)으로 $150^{\circ}C$에서 성장된 zinc oxide (ZnO) 초박막의 두께 변화에 따른 구조적, 전기적, 광학적 특성을 조사하였다. ZnO 박막을 증착하기 위해 금속 전구체와 반응물로 각각 diethylzinc와 deionized water를 사용하였다. ALD 사이클 당 성장률은 $150^{\circ}C$에서 약 0.21 nm/cycle로 일정 하였으며, 50 사이클 이하의 샘플들은 초기 ALD 성장 단계에서 상대적으로 얇은 두께로 인하여 비정질 성질을 갖는 것으로 보였다. 100 사이클에서 200 사이클로 두께가 증가함에 따라 ZnO 박막의 결정성이 증가하였고 hexagonal wurtzite 구조를 보였다. 또한, ZnO 박막의 입자 크기가 ALD 사이클의 수의 증가에 따라 증가되었다. 전기적 특성 분석 결과 박막 두께의 증가에 따라서 비저항 값이 감소하였으며, 이는 박막 두께 증가에 따른 입자 크기 증가 및 결정성 개선으로 더 두꺼운 ZnO 박막에서 입자 경계의 농도 감소와 상관 관계가 있음을 알 수 있었다. 광학적 특성 분석 결과 근 자외선 영역 (300 nm~400 nm)에서의 밴드 엣지 흡수가 증가 및 이동되었는데 이 현상은 ZnO 박막 두께의 증가에 따른 캐리어 농도의 증가가 기인 한 것으로, 이 결과는 박막 두께의 증가에 따른 저항률 감소와 잘 일치한다. 결과적으로 박막의 두께가 증가하면 막 면의 응력이 완화되어 밴드 갭이 감소하고 결정성 및 전도성이 향상됨을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• 한국정보통신학회논문지
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• 제15권7호
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• pp.1559-1563
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• 2011

본 연구에서는 고주파 마그네트론 스퍼터링 (RF magnetron sputtering) 법으로 기판 온도 ($50{\sim}200^{\circ}C$)에 따른 GZO(Ga : 5 wt%) 박막을 PES (polyethersulfon) 플라스틱 기판위에 제작하여, 광학적 및 전기적 특성을 조사하였다. XRD 측정을 통해 공정 조건에 관계없이 모든 GZO 박막이 c축으로 우선 성장함을 확인할 수 있었다. 박막의 표면을 AFM 으로 조사한 결과, 표면 거칠기 값은 기판 온도 $200^{\circ}C$ 에서 제작한 박막에서 가장 낮은 값 (0.196 nm) 을 나타내었다. 투과도 측정 결과, GZO 박막은 약 80% 이상의 투과율을 보였고, 기판 온도가 증가할수록 에너지 밴드 갭이 증가하는 Burstein-Moss 효과를 관찰할 수 있었다. Hall 측정 결과, 기판 온도 $200^{\circ}C$에서 제작한 GZO 박막에서 가장 낮은 비저항 $6.93{\times}10-4\;{\Omega}{\cdot}cm$ 값과 가장 높은 캐리어 농도 $7.04{\times}1020/cm^3$ 값을 나타내었다.

• 한국정보통신학회논문지
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• 제19권6호
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• pp.1393-1398
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• 2015

본 연구에서는 고주파 마그네트론 스퍼터링 법으로 PES 기판 위에 공정압력을 5 에서 20 mTorr 로 변화시켜 가며 GZO (Ga-doped ZnO) 박막을 제작하여, 전기적 및 광학적 특성을 조사하였다. XRD 측정을 통해 공정압력에 무관하게 모든 GZO 박막이 c 축으로 우선 성장함을 확인할 수 있었고, 5 mTorr 에서 제작한 GZO 박막이 반가폭 0.44° 로 가장우수한 결정성을 나타내었다. AFM 관찰 결과, 표면 거칠기 값은 공정압력 5 mTorr 제작한 박막에서 가장 낮은 값인 0.20 nm 를 나타내었다. 공정압력 5 mTorr 에서 증착한 GZO 박막의 재료평가지수는 6652 로 가장 우수한 값을 나타내었고 이때 비저항과 가시광 영역에서의 평균 투과도는 각각 6.93×10^-4Ω·cm 과 81.4 % 이었다. 공정압력이 증가함에 따라 캐리어 농도가 감소하고 이로 인해 에너지 밴드갭이 좁아지는 Burstein-Moss 효과도 관찰할 수 있었다.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국결정학회지
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• 제11권4호
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 대한전자공학회논문지
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• 제26권6호
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• pp.48-56
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• 1989

밀착형 1차원 영상감지소자로서 팩시밀리에 사용될 광도전막을 사일랜듸 글로방전 분해법으로 제작하였다. 우선 rf전력, 사일랜유량, 분위기 가스압, $H_2/SiH_4$비 및 기판온도의 증착조건에 따른 단층광전도막의 전기적 및 광학적특성을 조사하였다. 이 단층구조 영상감지막은 광전감도 0.85와 100lux 조도하에서 $I_{ph}/I_d=100$을 나타내었다. 그러나 이러한 단층박막은 양 전극으로 부터의 캐리어주입으로 인해 큰 암전류도 0.2nA 이하를 나타내었다. 또한 다층막은 단층막에 비해 단파장 가시광영역이 보상되어 팩시밀리용 1차원 영상감지소자에 사용될 만한 결과를 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.