• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.1 no.2
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• pp.74-81
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• 1987

The reduction in dielectric strength of insulating polymer material when applying electric field is known to be substantial due to the trapped carrier effect. In this study, the carrier property of Biaxially-Drawn polypropylene, which has superior heat-resistance compared to ordinary one, is examined to improve electrical characteristics by measuring TSC spectra as a function of electric field applied to a sample of ($50{\mu}m$) thickness film. The TSC spectra in the temperature range of 303-413(K) and electric field of 2-80(MV/m) have shown no observable effect below 12(MV 1m) but TSC currents of Hetero-and Homo-peaks formed from trapped space charger and space charger injected from electrode have been observed above that point, which seems eventually lead to dielectric breakdown. Finally, this study has shown the superior dielectric proporty of Biaxially-Drawn polypropylene film compared to the non-oriented one for electrical insulation.

• Journal of the Society of Naval Architects of Korea
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• v.43 no.4 s.148
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• pp.512-520
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• 2006

The effects of flexibilities of supporting structures on shaft alignment are growing as ship sizes are Increasing mainly for container carrier and LNG carrier. But, most of classification societies not only do not suggest any quantitative guidelines about the flexibilities but also do not have shaft alignment design program considering the flexibility of supporting structures. A newly developed program, which is based on innovative shaft alignment technologies including nonlinear elastic multi-support bearing concept and hull deflection database approach, has S basic modules : 1)fully automated finite element generation module, 2) hull deflection database and it's mapping module on bearings, 3) squeezing and oil film pressure calculation module, 4) optimization module and 5) gap & sag calculation module. First module can generate finite element model including shafts, bearings, bearing seats, hull and engine housing without any misalignment of nodes. Hull deflection database module has built-in absolute deflection data for various ship types, sizes and loading conditions and imposes the transformed relative deflection data on shafting system. The squeezing of lining material and oil film pressures, which are relatively solved by Hertz contact theory and built-in hydrodynamic engine, can be calculated and visualized by pressure calculation module. One of the most representative capabilities is an optimization module based on both DOE and Hooke-Jeeves algorithm.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.6
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• pp.1067-1072
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• 2023

We prepared AZO (Al₂O₃ : 3 wt %) thin films according to the substrate temperature using the pulsed laser deposition method and the structural, electrical, and optical properties of the thin films were investigated. The AZO thin film deposited at 400℃ showed the best (002) orientation and the FWHM was 0.38°. As a result of the investigation of electrical properties, it was confirmed that the carrier concentration and mobility increased and the resistivity decreased as the substrate temperature increased. The average transmittance in the visible light region showed a high value of 85% or more regardless of the substrate temperature. The Burstein-Moss effect, in which the carrier concentration would increase with increasing substrate temperature thereby widening the energy band gap, was also observed. The resistivity and the figure of merit of the AZO thin film deposited at a substrate temperature of 400℃ were 6.77 × 10^-4 Ω·cm and 1.02 × 10⁴ Ω^-1·cm^-1 respectively, showing the best value.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.182-185
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• 2018

Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobility) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increasing electron mobility has been reported. However, as the heat treatment temperature is relatively high at $500^{\circ}C$, an application where a flexible substrate is absent would be more suitable.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1627-1634
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• 2017

In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.41-45
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• 2004

P-type $Bi_{0.5}$$Sb_{1.5}$ $Te_3$ thin films were deposited by the flash evaporation technique, and their thermoelectric properties and electronic transport parameters were investigated. The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties. Annealing effects on the carrier concentration and mobility were also studied, and their variations were analyzed in conjunction with the antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the effective mean free path was found to be 3150$\AA$. No phase transformation and composition change were observed after annealing treatment, but carrier mobility increased due to grain growth. Carrier concentration decreased considerably due to reduction of the antisite defects, so that electrical conductivity decreased and Seebeck coefficient increased. When annealed at 473 K for 1 hr, Seebeck coefficient and electrical conductivity were $160\mu$V/K and 610 $W^{-1}$ $cm^{ -1}$, respectively. Therefore, the thermoelectric quality factor were also enhanced to be $16\mu$W/cm $K^2$.>.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.56-63
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• 2013

IGZO thin films have been prepared by RF magnetron sputtering. The structural, electrical and optical properties of the IGZO thin films have been investigated as a function of deposition condition. XRD analysis of IGZO thin films showed a typical crystallographic orientation with c-axis perpendicular regardless of deposition conditions. The carrier mobility, carrier concentration and resistivity of the IGZO films sputtered at 200 W, 1mTorr and $300^{\circ}C$ were $28.5cm^2/V{\cdot}sec$, $2.6{\times}10^{20}cm^3$, $8.8{\times}10^{-4}{\Omega}{\cdot}cm$ respectively. The optical transmittance were higher than 80% at visible region regardless of the deposition conditions under the experiments above, and specifically higher than 90% at wave length over 500 nm. The absorption edge was shifted to shorter wavelength with increase of carrier concentration.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.115-121
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• 2002

In this research we have investigated the characteristics of ultra thin $HfO_2 /SiON$stack structure films using several analytical techniques. SiON layer was thermally grown on standard SCI cleaned silicon wafer at $825^{\circ}C$ for 12sec under $N_2$O ambient. $HfO_2 /SiON$$_4$/$H_2O$ as precursors and $N_2$as a carrier/purge gas. Solid HfCl$_4$was volatilized in a canister kept at $200^{\circ}C$ and carried into the reaction chamber with pure $N_2$carrier gas. $H_2O$ canister was kept at $12^{\circ}C$ and carrier gas was not used. The films were grown on 8-inch (100) p-type Silicon wafer at the $300^{\circ}C$ temperature after standard SCI cleaning, Spectroscopic ellipsometer and TEM were used to investigate the initial growth mechanism, microstructure and thickness. The electrical properties of the film were measured and compared with the physical/chemical properties. The effects of heat treatment was discussed.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.66-67
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• 2003

Bismuth (Bi) has been an attractive materials for studying spin dependent transport properties because it shows very large magnetoresistance (MR) resulting from its highly anisotropic Fermi surface, low carrier concentrations, long carrier mean free path 1 and small effective carrier mass m*[1-3]. With all the intriguing properties, difficulty in fabrication of high quality Bi thin films may have prevented extensive application of Bi in magnetic field sensing and spin-injection devices. Previous works found that the surface roughness and small grain size in 100-200 nm of Bi thin film made by evaporation and sputtering are major causes of low MR. Although relatively higher MR in electrodeposited Bi followed by annealing was reported, it still suffers from rough sulfate roughness which is so severs that it is hardly able to make a field sensing and spin-injection device using conventional photolithography process.