• Journal of Information Management
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• v.41 no.1
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• pp.173-200
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• 2010

National construction project for SOC(Social Overhead Capital) is led by the government and invested high cost and all capabilities for long times. In general case the life times of SOC facilities are permanently. According to the long life time of the facilities documents and records of national projects are also retained permanently. Consistent classification systems are required to operation and maintenance of the facilities efficiently and to support the organic co-works for several Stakeholders. Therefore the classification of national construction projects are based on WBS of the project. WBS is the hierarchy structure that established and developed in project management project management methodology to produce deliverables of the projects. As a result, this study provides a prospect of project records classification systems in the 21st Century.

• Food Quality and Culture
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• v.3 no.2
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• pp.53-58
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• 2009

This study was conducted to investigate the quality characteristics of frozen stored mungbean starch gels added with sucrose fatty acid ester (SE). The study showed a delay of gelatinization of mungbean starch by SE addition through the measurements conducted by using Rapid Visco Analyzer (RVA) and Differential Scanning Calorimeter (DSC). In the color of SE added frozen stored gels, lightness (L) and yellowness (b) values were increased compared to those of values measured from freshly prepared gel, whereas redness (a) value was decreased. The addition of 1% SE on mungbean starch gel prevented the color change during frozen storage. Rupture stress and rupture energy of frozen stored gel was higher than those of freshly prepared gel, whereas rupture strain of frozen stored gel was lower than that of freshly prepared gel. The addition of 1% SE on mungbean starch gel prevented the change of rupture characteristics during frozen storage. Texture profile analysis(TPA) characteristics revealed a significant change of the gel texture during frozen storage by showing an increase of hardness of the frozen stored gels compared to the freshly prepared gels with newly discovered fracturability, which resulted to show a large difference of gel texture by showing the disappearance of adhesiveness and large reduction of cohesivenes. The addition of 1% SE on mungbean starch gel prevented the change of TPA characteristics during frozen storage. Scanning electron micrographs showed that network structure of frozen stored gel was more rough than that of freshly prepared gel, and the addition of 1% SE on mungbean starch gel could suppress the breakdown of network structure. Thus the addition of 1.0% SE on mungbean starch gel was appropriate method for remaining gel characteristics during frozen storage.

• Applied Microscopy
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• v.40 no.2
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• pp.81-88
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• 2010

The fine structural characteristics of the apoptotic cells in the cutaneous epithelium of the anuran tadpole of the black-spotted frog, Rana nigromaculata was examined using the TUNEL (Terminal deoxynucleotidyl transferase-mediated biotinylated d-Uridine triphosphate Nick End Labeling) staining technique and TEM (transmission electron microscopy) observations. The cutaneous epithelium of the tadpole was composed of stratified cuboidal cells and the apoptotic cell death was observed continuously during the tail degeneration stages from the Shumway stage number 31 to 33. The early apoptotic cells shown in the epithelium demonstrated condensation and margination of the chromatin material at the nuclear periphery, and nuclear breakdown and cytoplasmic condensation were followed. Subsequent cytoplasmic degeneration of the apoptotic cell were produced by membrane-bounded cell fragments with relatively well preserved organelles. Following the processes of autophagic degradation, the late apoptotic cells being phagocytosed by other surrounding cells. These nearby cells, presumptive intraepithelial macrophages, contain a variety of lysosomal residual bodies which fuses with other cell organelles or other cytoplasmatic material to form secondary lysosomes. They are soon transformed into lamellar shaped vesicles and finally disappeared during the process of degradation.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.500-505
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• 1997

Experimental amorphous photodiode is fabricated on CMOS IC using a-Si:H p-i-n structure. Amorphous photodiode is scuccessfully integrated on CMOS IC using amorphous Si produced by PECVD system. The PECVD system can deposit a-Si:H at low temperature so that photodiode can be integrated with CMOS IC structure without any process incompatibility. The fabricated amorphous photodiode has a breakdown voltage of below -20 V, a leakage current of about 1 $\mu\textrm{A}$, and turn-on voltage of 0.6~0.8 V. It is demonstrated that the photocurrent of optical signal can be turned on and off by a small voltage and the fabricated amorphous p-i-n photodiode can be used as an optical switch.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Korean Journal of Construction Engineering and Management
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• v.8 no.4
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• pp.155-166
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• 2007

The purpose of this research is to develop a conceptual model and prototype that establishes a new approach for building cost estimating in the schematic design phage. This research use the method that analyzes quantity and unit price separately to enhance schematic cost estimating through conducting literature review andi analyzing existing schematic cost estimating methods. In addition, this study proposes tile concept of cost breakdown structure including two more classifications: building element and floor compared to existing one only classified by trade. Thus, a Quantity Based Active Schematic cost Estimating(Q-BASE) model is developed founded on those two concepts. By applying proposed schematic cost estimating model, historical structure cost of residential complex building project is analyzed, and then, based on this analysis, prototype is implemented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Food Engineering Progress
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• v.13 no.4
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• pp.335-340
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• 2009

This study was performed to analyze changes in the molecular structural and physical properties of modified corn starch, in which particle structure was broken using high impact planetary mill and ultra fine pulverizing techniques. The average diameter and specific surface area of the modditied corn starch after pulverization decreased 50% and increased 567%, respectively. Content of low molecular substances mersured using gel permeation chromatography (GPC) increased from 21.0% to 86.5% after pulverizing corn starch. Damaged starch content also increased from 9.63% to 83.57% after pulverizing corn starch. After pulverization, gel formation capacity corn starch was reduced compared to that of control by structure breakdown.

• Journal of Convergence for Information Technology
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• v.9 no.7
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• pp.33-40
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• 2019

As aerospace industry has been activated recently, it is required to commercialize composite analysis software. Until now, commercial software has been mainly used for analyzing composites, but it has been difficult to use due to high price and limited functions. In order to solve this problem, automatic analysis software for both in-plane and corner radius strength, which are all made on-line and generalized, has recently been developed. However, these have the disadvantage that they can not be analyzed simultaneously with multiple failure criteria. In this paper, we propose a method to greatly improve the processing speed while simultaneously handling the analysis of multiple failure criteria using a parallel processing platform that only works with a GPU equipped with a CUDA core. We have obtained satisfactory results when the analysis speed is experimented on the vast structure data.