• 전자공학회논문지A
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• 제30A권12호
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• pp.60-68
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• 1993

Thw VLSI device of submicron level trends to have a low level of reliability because of hot carriers which are caused by short channel effects and which do not appear in a long-channel MOSFET operated in 5V. In order to minimize the generation of hot carrier, much research has been made into various types of drain structures. This study has suggested CG MOSFET (Concaved Gate MOSFET) as new drain structure and compared its electrical characteristics with those of the conventional MOSFET and LDD-structured MOSFET by making use of a simulation method. These three device were assumed to be produced by the LOCOS process and a computer-based analysis(PISCES-2B simulator) was carried out to verify the hot electron-resistant behaviours of the devices. In the present simulation, the channel length of these devises was 1.0$\mu$m and their DC characteristics, such as VS1DT-IS1DT curves, gate and substrate current, potential contours, breakdown voltage and electric field were compared with one another.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 춘계학술대회 논문집
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• pp.497-501
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• 2004

The primary failure causes of underground distribution power cables are water penetration in insulation layer and stress enhancement at inner semi-conductive layer. Accordingly, it is needed to improve the materials and the structure of power cables for extending lifetime and preventing failure. We uses non-flaming PE materials instead of PVC as a covering material and encapsulating structure. We also use super smooth class material as a inner semi-conductive layer. The newly developed cables are improved in AC breakdown voltage after ageing tests.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1554-1555
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• 2006

We have studied the backward wave oscillator, a power pulsed generator oscillator at 20 GHz has higher frequency then current one. An absolute instability linear analysis was used for the purpose of designing the slow wave structure. A large diameter of the slow wave structure was adopted to prevent the breakdown brought about by the increase of power density.

• 한국군사과학기술학회지
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• 제13권4호
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• pp.612-618
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• 2010

In order to successfully manage of the state-of-the-art weapon system R&D program which are under the limited budget and schedule but also has a high level of technical risks, it is gaining weights to use such a scientific program management tool as TPM. Therefore, the purpose of this research is to review the concept of the TPM and its relation among MOE, MOP and TPM, and introduce an application method of TPM mainly focusing on helicopter development program. It has the organized structure, detailed procedure and 282 parameters for performance management through the TPM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.165-168
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• 2000

This paper presents the tracking resistance and mechanical strength due to boiling absorption of epoxy resin. The single network structure specimen(E series) formed of epoxy alone and interpenetrating polymer network(IPN) structure specimen(EM series) which epoxy resin was taken as first network and methacrylic acid resin as second network were manufactured. As adding $SiO^2$ filler classified by o[phr], 50[phr] and 100[phr] to those specimens, six kinds of specimens were manufactured and boiled in water during 2, 4, 8, 16, 32 and 64[hours]. As a result, it was confirmed that the tracking breakdown time of E series showed a abrupt decrease with boiling time increasing, but that of EM series was decreasing smoothly. Also, it was verified that the degrading rates of mechanical strength was lowerd according to improvement of adhension strength in case of EM series.

• Bulletin of the Korean Chemical Society
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• 제20권8호
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• pp.869-874
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• 1999

In this paper, electrochemical techniques are used to investigate hydrothermal-electrochemically formation of barium titanate (BT) ceramic films. For comparison, the electrochemical behaviors of anodic titanium oxide films formed in alkaline solution were also investigated both at room temperature and in hydrothermal condition at 150.0 ℃. Film structure and morphology were identified by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Titanium oxide films produced at different potentials exhibit different film morphology. The breakdown of titanium oxide films anodic growth on Ti electrode plays an important roles in the formation of BT films. BT films can grow on anodic oxide/metal substrate interface by short-circuit path, and the dissolution-precipitation processes on the ceramic film/solution interface control the film structure and morphology. Based upon the current experimental results and our previous work, extensively schematic proce-dures are proposed to model the mechanism of ceramic film formation by hydrothermal-electrochemical method.

• 한국전산구조공학회논문집
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• 제21권3호
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• pp.247-252
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• 2008

최근 전세계적으로 3차원 객체 모델(3D Object Model)을 활용하여 건설 프로젝트의 생애주기 동안 참여주체들이 효과적으로 정보를 공유하고 관리할 수 있도록 하는 가상건설시스템의 개발이 활발히 진행되고 있다. 이 논문에서는 가상 공간에서 토목구조물의 해석 및 설계를 위하여 반드시 필요한 구조물의 3차원 객체모델과 구조해석 시스템과의 인터페이스 설계를 다루었다. 3D 객체모델 생성에 필요한 인관 매개변수모델링 기법과 구조물의 구조해석에 필요한 다양한 변수를 고려할 수 있는 제품계층구조(product breakdown structure, PBS) 구축 방안을 제시하였다. PBS 구성시 3D 객체 모델 정보로부터 구조 해석에 필요한 속성 정보만을 추출하여 해석 프로그램에 적용이 가능하게 하였으며, 협업작업에 의해 결정되는 여러 수치를 다시 객체정보로 추가 작업 없이 전달하여 3D 객체 모델과 연동되어 변화될 수 있는 인터페이스 프로그램 설계 방안을 제안하였다. 향후 이 연구의 결과를 기반으로 개발된 3D 객체모델과 구조해석 시스템의 인터페이스 프로그램이 가상건설 시스템 구현에 효과적으로 사용될 수 있을 것으로 판단된다.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2006년도 제33회 KOSCO SYMPOSIUM 논문집
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• pp.242-250
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• 2006

The impacts of equivalence ratio on the flow structure and flame dynamics in a model gas turbine combustor are investigated using large eddy simulation(LES). Dynamic k-equation model and G-equation flamelet model are employed as LES subgrid model for flow and combustion, respectively. As a result of mean flow field for each equivalence ratio, the increase of equivalence ratio brings about the decrease of swirl intensity through the modification of thermal effect and viscosity, although the same swirl intensity is imposed at inlet. The changes of vortical structure and turbulent intensity etc. near flame surface are occurred consequently. That is, the decrease of equivalence ratio can leads to the increase of heat release fluctuation by the more increased turbulent intensity and fluctuation of recirculation flow. In addition, the effect of inner vortex generated from vortex breakdown on the heat release fluctuation is increased gradually with the decrease of equivalence ratio. Finally, it can be identified that the variations of vortical structure play an important role in combustion instability, even though the small change of equivalence ratio is occurred.

• 산업경영시스템학회지
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• 제25권4호
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• pp.22-31
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• 2002

A high-speed rail system represents a typical example of large-scale multi-disciplinary systems, consisting of subsystems such as train, electrical hardware, electronics, control, information, communication, civil technology etc. The system design and acquisition data of the large-scale system must be the subject under strict configuration control and management. Not only the requirements of the large-scale system dictate the contracts with the suppliers but also become the basis for the development process, project execution, system integration, and testing. The requirements database provide the system design specification of all development activities. Using the RDD-100, a systems engineering tool, the Korea next-generation high-speed rail program can establish requirements traceability and development process management in performing the enabling train technology development projects. This paper presents the results from a computer-aided systems engineering application to the Korea next-generation high-speed railway project. Especially, the focus of the study was on requirement management and PBS(Product Breakdown Structure) management.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.247-252
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• 2012

IGBT (insulated gate bipolar transistor) has been widely used around the power industry as it has good switching performance and its excellent conductance. In order to reduce power loss during switch turn-on state, it is essential to reduce its resistance. However, trade off relationship between breakdown voltage and device conductance is the greatest obstacle on the way of improvement. Floating island structure is one of the solutions. Still, under optimized device condition for the best performance, improvement rate is negligible. Therefore, this paper suggests adding trench gate on floating island structure to eliminate JFET (junction field effect transistor) area to reduce resistance and activate floating island effect. Experimental result by 2D simulation using TCAD, shows 20% improvement of turn-on state voltage drop.