Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of Floating Island IGBT Using Trench Gate Structure

트렌치 게이트를 이용한 Floating Island IGBT의 전기적 특성에 관한 고찰

  • Cho, Yu-Seup (Department of Electrical Engineering, Korea University) ;
  • Jung, Eun-Sik (Department of Electrical Engineering, Korea University) ;
  • Oh, Kum-Mi (Department of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University)
  • Received : 2012.03.16
  • Accepted : 2012.03.22
  • Published : 2012.04.01
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Abstract

IGBT (insulated gate bipolar transistor) has been widely used around the power industry as it has good switching performance and its excellent conductance. In order to reduce power loss during switch turn-on state, it is essential to reduce its resistance. However, trade off relationship between breakdown voltage and device conductance is the greatest obstacle on the way of improvement. Floating island structure is one of the solutions. Still, under optimized device condition for the best performance, improvement rate is negligible. Therefore, this paper suggests adding trench gate on floating island structure to eliminate JFET (junction field effect transistor) area to reduce resistance and activate floating island effect. Experimental result by 2D simulation using TCAD, shows 20% improvement of turn-on state voltage drop.

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References

  1. E. G. Kang, B .J. Kim, and Y. H. Lee, J. KIEEME 23, 1 (2010).
  2. B. J. Baliga, Fundamentals of Power Semiconductor Devices, Springer, 91 (2008).
  3. H. S. Lee, Y. H. Kim, E. G. Kang, and M Y. Sung, J. KIEEME, 19, 907 (2006).
  4. J. M. Yoon, Magazine of IEEK, 37, 8 (2010).
  5. Y. S. Cho, J. H. Oh, J. M. Geum, and M. Y. Sung, Korean Conference on Semiconductors (Seoul, 2012)
  6. N. Cezac, F. Morancho, P. Rossel, H. Tranduc, and A. Peyre-Lavigne, International Symposium on Power Semiconductor Devices, ISPSD (Toulouse, France, 2000)
  7. E. S. Jung, Y. S. Cho, E. G. Kang, and M. Y. Sung, JEET, 7, 3 (2012).