• Journal of the Korean Society for Aviation and Aeronautics
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• v.17 no.1
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• pp.24-28
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• 2009

The reliability assessment is performed for Pressure Control Regulator of Aircraft Fuel System using reliability procedure which consists of the reliability analysis and the Failure Modes and Effects Analysis(FMEA). The target reliability as MTBF(Mean Time Between Failure) is set to 5000hr. During the reliability analysis process, the system is categorized by Work Breakdown Structure(WBS) up to level 3, and a reliability structure is defined by schematics of the system. Since the components and parts that have been collected through EPRD/NPRD. The predicted reliability to meet mission requirements and operating conditions is estimated as 4375.9hr. To accomplish the target reliability, the components and parts with high RPN have been identified and changed by analyzing the potential failure modes and effects. By changing the configuration design of components and parts with high-risk, the design is satisfied target reliability.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.523-526
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• 2000

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.156-158
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• 2002

Reduction of on-resistance($R_{on}$) in high voltage devices is of critical importance for the power consumption of the device. $R_{on}$ decreases with increase of the doping concentration of the drift region. However, breakdown voltage(BV) decreaes also with increase of doping concentration. In this report, a multi-resurf LDMOS[1] strcuture is proposed to reduce the $R_{on}$ which allows no degradation in BV. The on-and off-state characteristics of the proposed structure are simulated using the two-dimensional devices simulator ATLAS and compared with those from the conventional structure.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• Journal of KIBIM
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• v.11 no.2
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• pp.1-16
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• 2021

Since entering the 21st century, the construction industry has developed faster and faster, and more and more technologies have been applied in the construction industry. BIM technology (Building Information Modeling) was born in this environment. The application of BIM technology can greatly improve the efficiency of cost management and help achieve the goal of cost management. But through BIM to realize project cost management, there is still no good solution. In order to solve this problem, this paper puts forward the concept of WBS structure applied to construction projects by studying the BoQ (Bill of Quantities) list based on BIM, and proposes the numbering method of the structure. The WBS (Work Breakdown Structure) structure proposed in this paper divides more than 5000 cost objects into 133 projects according to the type of work and project schedule. This structure helps to realize the application of BIM in project cost management. Although this article has studied more than 5000 data of three projects, it does not think that it can cover all cost objects in the existing construction industry. The purpose of this article is to propose a solution for cost and Process Control using BIM-based BoQ data.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.36 no.6
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• pp.381-389
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• 2023

One of the crucial components in building information modeling (BIM) is data. To systematically manage these data, various research studies have focused on the creation of object breakdown structures and property sets. Specifically, crucial data for managing programs and payments involves work breakdown structures (WBSs) and cost breakdown structures (CBSs), which are indispensable for mapping BIM objects. Achieving this requires disassembling CBS quantities based on 3D objects and WBS. However, this task is highly tedious owing to the large volume of CBS and divergent coding practices employed by different organizations. Manual processes, such as those based on Excel, become nearly impossible for such extensive tasks. In response to the challenge of computing quantities that are difficult to derive from BIM objects, this study presents methods for disassembling length-based quantities, incorporating significant portions of the bill of quantities (BOQs). The proposed approach recommends suitable CBS by leveraging the accumulated history of WBS-CBS mapping databases. Additionally, it establishes a unified CBS code, facilitating the effective operation of CBS databases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• International conference on construction engineering and project management
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• 2007.03a
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• pp.30-40
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• 2007

The demand for light-rail construction projects has recently been increasing, and they are mostly supervised by private construction companies. Therefore, a private construction company that aim to raise gains from the operation of the facilities during the contract period greater than what they invested should b able to accurately calculate the costs from the aspect of Life Cycle Cost (LCC). In particular, a light-rail transit bridge that has a heavier portion from the aspect of the cost of light-rail transit construction requires a more accurate calculation method than the conventional LCC calculation method. For this, an LCC analysis model was developed and a cost breakdown structure was suggested based on literature review. The construction costs by shape of the upper part of a light-rail transit were calculated based on the cost breakdown system presented in this paper, and the cost generation cycle and cost unit price were collected and analyzed based on records on maintenance costs, rehabilitation and replacement. In addition, after forming some hypotheses in order to perform the LCC analysis, economic evaluation was conducted from the aspect of the LCC by using performance data by item.