• Journal of Integrative Natural Science
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• v.2 no.3
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• pp.202-206
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• 2009

Optical images based on the porous silicon exhibiting photoluminescence have been prepared from an electrochemical etching of n-type silicon wafer (boron-doped,<100> orientation, resistivity $1{\sim}10{\Omega}-cm$) by using a beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. This provides the ability to fabricate complex optical encoding in the surface of silicon.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• Journal of the Korean Electrochemical Society
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• v.5 no.1
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• pp.30-38
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• 2002

Disordered carbon and boron-substituted disordered carbons $C_{l-x}B_x(x=0.05,\;0.10,\;0.20)$ were synthesized by Pyrolysis of LPG(liquid Propane gas)and $BCl_3$. Their electrochemical properties as anode materials for Li-ion secondary batteries were then investigated. When PVDF is added to the sample in a weight ratio 5 : 95, the disordered carbon with x=0.00 had the first discharge capacity 374 mAh/g. Its cycling performance was relatively good from the second cycle and it had the discharge capacity 258 mAh/g at the 10th cycle. When PVDF is added to the sample in a weight ratio 5 : 95, the sample with x=0.05 among the samples $C_{l-x}B_x(x=0.05,\;0.10,\;0.20)$ exhibited the largest first discharge capacity 860 mAh/g and discharge capacity 181 mAh/g at the 10th cycle. All the samples had similar cycling performances from the second cycle. The sample $C_{0.90}B_{0.10}$ showed the best electrochemical properties as a anode materials fur Li-ion secondary battery from the view points of the first discharge capacity(853 mAh/g when $10w1.\%$ PVDF is used), cycling performance, discharge capacity(400mAh/g at the 10th cycle when $10wt.\%$ PVDF is used). All the samples showed generally larger charge and discharge capacities when $10wt.\%$ PVDF ratter than $5wt.\%$ PVDF is used. The plateau region in the range of voltage lower than 1.25V becomes larger probably since the structure becomes less disordered by the addition of boron. When boron is added, the charge and discharge capacities decreased suddenly at the second cycle. This may be become only a part of Li are reversibly deintercalated and intercalated and a part of Li which are strongly combined with B are not deintercalated. The increases in charge and discharge capacities are considered to be resulted from the increase in the potential of Li in the boron-added carbons, caused by the strengthening of the chemical bond between the intercalated Li and the boron-carbon host since the boron acts as electron acceptor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1342-1349
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• 1988

The dependence of the etch rates of differently doped poly-Si films on the gas composition, the chamber pressure and the RF power was investigated in detail. The highest anisotropy and the lowest CD loss were achieved at the $SF_6$-rich compositions, i.e., $Cl_2:SF_6$=17:33 (SCCM), in the $POCl_3$-doped poly-Si. The etch rates increased for n-type dopant (phosphorus), while decreased for p-type (boron) with increasing the doping levels irrespective of plasma parameters. And from the results of the activation of doped poly-Si films the active carrier concentrations as well as the doping concentrations were found to be responsible for the increase of the etch rate of the phosphorus-doped poly-Si.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.694-696
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• 2010

We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as $200{\mu}m$ in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.47-50
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• 2017

Carbon is proven to be very effective in pinning the magnetic vortices and improving the superconducting performance of $MgB_2$ at high fields. In this work, we have used polymethyl methacrylate (PMMA) polymer as a safe and cost effective carbon source. The effects of molecular weight of PMMA on crystal structure, microstructure as well as on superconducting properties of $MgB_2$ were studied. X-ray diffraction analysis revealed that there is a noticeable shift in (100) and (110) Bragg reflections towards higher angles, while no shift was observed in (002) reflections for $MgB_2$ doped with different molecular weights of PMMA. This indicates that carbon could be substituted in the boron honeycomb layers without affecting the interlayer interactions. As compared to undoped $MgB_2$, substantial enhancement in $J_c(H)$ properties was obtained for PMMA-doped $MgB_2$ samples both at 5 K and 20 K. The enhancement could be attributed to the effective carbon substitution for boron and the refinement of crystallite size by PMMA doping.

• Journal of Environmental Health Sciences
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• v.36 no.4
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• pp.313-322
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• 2010

The aim of this research was to apply experimental design methodology to optimization of conditions of electrochemical oxidation of Rhodamine B (RhB) and N, N-Dimethyl-4-nitrosoaniline (RNO, indicative of the OH radical). The reactions of electrochemical oxidation of RhB degradation were mathematically described as a function of the parameters of current ($X_1$), NaCl dosage ($X_2$) and pH ($X_3$) and modeled by the use of the central composite design. The application of response surface methodology (RSM) yielded the following regression equation, which is an empirical relationship between the removal efficiency of RhB and RNO and test variables in a coded unit: RhB removal efficiency (%) = $94.21+7.02X_1+10.94X_2-16.06X_3+3.70X_1X_3+9.05X_2X_3-{3.46X_1}^2-{4.67X_2}^2-{7.09X_3}^2$; RNO removal efficiency (%) = $54.78+13.33X_1+14.93X_2- 16.90X_3$. The model predictions agreed well with the experimentally observed result. Graphical response surface and contour plots were used to locate the optimum point. The estimated ridge of maximum response and optimal conditions for the RhB degradation using canonical analysis was 100.0%(current, 0.80 A; NaCl dosage, 2.97% and pH 6.37).

• Journal of Environmental Science International
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• v.19 no.9
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• pp.1143-1152
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• 2010

The purpose of this study is to degradation of Rhodamine B (RhB, dye) and N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the electro-generation of OH radical) in solution using boron doped diamond (BDD) electrode. The effects of applied current (0.2~1.0 A), electrolyte type (NaCl, KCl, and $Na_2SO_4$) and electrolyte concentration (0.5~3.0 g/L), solution pH (3~11) and air flow rate (0~4 L/min) were evaluated. Experimental results showed that RhB and RNO removal tendencies appeared with the almost similar thing, except of current. Optimum current for RhB degradation was 0.6 A, however, RNO degradations was increased with increase of applied current. The RhB and RNO degradation of Cl type electrolyte were higher than that of the sulfate type. The RhB and RNO degradation were increased with increase of NaCl concentration and optimum NaCl dosage was 2.5 g/L. The RhB and RNO concentrations were not influenced by pH under pH 7. Optimum air flow rate for the oxidants generation and RhB and RNO degradation were 2 L/min. Initial removal rate of electrolysis process was expressed Langmuir - Hinshelwood equation, which is used to express the initial removal rate of UV/$TiO_$2 process.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.46-50
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• 2008

Optical images on the porous silicon exhibiting Febry-Perot fringe pattern have been prepared by using an electrochemical etching of p-type silicon wafer (boron-doped,<100> orientation, resistivity $0.8{\sim}1.2m{\Omega}-cm$) and beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. A decrease in the effective optical thickness of the Febry-Perot layers was observed, indicative of a change in refractive index induced by exposing of porous silicon to the white light. This provides the ability to fabricate complex optical encoding in the surface of silicon.