Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.08a
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- Pages.358-358
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- 2012
The Properties of Boron-doped Zinc Oxide Film Deposited according to Oxygen Flow Rate
- Kim, Dong-Hae (Kwang-Woon University) ;
- Son, Chan-Hee (Kwang-Woon University) ;
- Yun, Myoung-Soo (Kwang-Woon University) ;
- Lee, Jin-Young (Kwang-Woon University) ;
- Jo, Tae-Hoon (Kwang-Woon University) ;
- Seo, Il-Won (Kwang-Woon University) ;
- Jo, I-Hyun (Kwang-Woon University) ;
- Roh, Jun-Hyung (Kwang-Woon University) ;
- Choi, Eun-Ha (Kwang-Woon University) ;
- Uhm, Han-Sup (Kwang-Woon University) ;
- Kwon, Gi-Chung (Kwang-Woon University)
- Published : 2012.08.20
Abstract
The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was