• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.925-926
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• 2008

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.619-620
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• 2011

• Journal of Welding and Joining
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• 제30권6호
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• pp.113-119
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• 2012

Ultrasonic bonding is the novel packaging method for flip-chip with high yield and low-temperature bonding. The bonding module is a core part of the bonding machine, which can transfer the ultrasonic energy into the bonding spot. In this paper, we propose topology optimization technique which can make new design of boding modules due to the constraints on resonance frequency and mode shapes. The designed bonding module using topology optimization was fabricated in order to evaluate the bonding performance and reliable operation during the continuous bonding process. The actual production models based on the proposed design satisfied the target frequency range and ultrasonic power. The bonding test was performed using flip-chip with lead-free Sn-based bumps, the results confirmed that the bonding strength was sufficient with the designed bonding modules. Also the performance degradation of the bonding module was not observed after the 300-hour continuous process with bonding conditions.

• 한국콘텐츠학회논문지
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• 제10권11호
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• pp.243-250
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• 2010

티타늄의 표면처리방법과 저온용융도재의 글레이징 온도 변화에 따른 티타늄-세라믹 보철물의 결합강도와 색조재현성에 관해 분석하고자 하였다. 표면처리방법에 따른 결합강도를 비교한 결과, TiN 코팅 처리한 STB1시편이 가장 높게 나타났으며, 전용결합재를 사용한 SB1시편, gold 코팅 처리한 SGB1시편 순으로 나타났다. 글레이징 온도에 따른 결합강도는 글레이징 온도가 $770^{\circ}C$인 시편들이 $720^{\circ}C$에서 글레이징을 실시한 시편들에 비하여 결합강도가 증가하였으며, $810^{\circ}C$에서 글레이징을 실시한 시편들에서는 결합강도가 감소하는 것으로 관찰되었다. 색조관찰 결과 글레이징 온도가 높아질수록 명도(${\Delta}L$)가 높아졌으며, 티타늄의 표면처리에 의한 색조가 티타늄-세라믹의 색조에 영향을 주었으며, 그 결과 SB1과 SGB3이 색조재현성이 가장 우수한 것으로 평가되었다.

• Journal of Welding and Joining
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• 제19권4호
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• pp.423-428
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• 2001

The bonding phenomena of Ni base single crystal superalloy. CMSX-4 during transient liquid phase(TLP) bonding was investigated using MBF-80 insert metal. Bonding of CMSX-4 was carried out at 1,373∼1,548K for 0∼19.6ks in vacuum. The (001) orientation of each test specimen was aligned perpendicular to the bonding interface. The dissolution width of base metal was increased when the bonding temperature and holding time were increased. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process. Borides were formed in the bonded layer during TLP bonding operation. The solid phase grew epitaxially into the liquid phase from substrates and single crystallization could be readily achieved during the isothermal solidification.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.7-13
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• 2019

Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

• 전자공학회논문지A
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• 제33A권3호
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• pp.140-151
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• 1996

In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 추계학술대회 논문집
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• pp.441-442
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• 2007

• Journal of Welding and Joining
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• 제15권4호
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• pp.136-142
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• 1997

In this study, the amorphous foil filler, thickness of 20 - $20~30\mu\textrm{m}$ was made to develop Cu-7.5wt%Mn-7.5wt%Si insert alloy(melting point temperature : solidus line 1003K, liquidus line 1070K). Liquid phase diffusion bonding of 304 stainless steels (STS304), is carried out successfully by using developed Cu-7.5Mn-7.5Si insert alloy. Bonding conditions are taken from bonding pressure of 5MPa, bonding temperatures from 1073K to 1423K varied within 50K and brazing holding times of 0, 30, 60 and 240 minutes. As the results, the tensile strength in the liquid phase diffusion bonding is a little bit lower than that in the solid phase diffusion bonding. The authors find out that the liquid phase diffusion bonding needs lower bonding pressure than the others. Therefore, the liquid phase diffusion bonding had an excellent brazability in which the bonding process showed the typical mechanism of diffusion bonding. In corresponding, the new developed insert alloy of low melting pointed Cu-7.5Mn-7.5Si makes possible brazing between the STS304.

• 마이크로전자및패키징학회지
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• 제28권2호
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• pp.59-64
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• 2021

차세대 반도체 기술은 이종소자 집적화(heterogeneous integration)를 이용한 시스템-인-패키징(system-inpackage, SIP) 기술로 발전하고 있고, 저온 Cu 본딩은 SIP 구조의 성능 향상과 미세 피치 배선을 위해서 매우 중요한 기술이라 하겠다. 본 연구에서는 porous한 Ag 나노막을 이용하여 Cu 표면의 산화 방지 효과와 저온 Cu 본딩의 가능성을 조사하였다. 100℃에서 200℃의 저온 영역에서 Ag가 Cu로 확산되는 것보다 Cu가 Ag로 확산되는 것이 빠르게 관찰되었고, 이는 저온에서 Ag를 이용한 Cu간의 고상 확산 본딩이 가능함을 나타내었다. 따라서 Ag 나노막을 이용한 Cu 본딩을 200℃에서 진행하였고, 본딩 계면의 전단 강도는 23.27 MPa로 측정되었다.