• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1755-1757
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• 1997

In this paper, a current calculation method based on Kirchhof's Current Law(KCL) and Kirchhof's Voltage Law(KVL) which is necessary to calculate magnetic fields and induced current around the human body is proposed in this paper. Using this method, we can solve the current values of the finite lines comprising the power system equipment. In the assumption that the current values induced in the human body are same, we calculate the induced current values.

• Proceedings of the KOSOMBE Conference
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• v.1993 no.05
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• pp.66-69
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• 1993

We have developed a software package for the analysis of electric field distribution in human body. It includes the graphical finite element mesh generator, linear system of equations solver using sparse matrix and vector technique, and post-processor for the display of the results. This software package can be used in various research areas of biomedical engineering where we inject current or apply voltage to human body. The software package was developed on Macintosh II computer and the size of the model is only limited by the main memory.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.153-157
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• 2002

Electricity living body formation operation appliance is using most imports until present. And, because electricity living body formation operation appliance is too expensive, it becomes burden to buy in small scale hospital. Also, problem that economical damage by income is added follows, Therefore, this treatise developed electricity living body formation operation appliance by home production, Ultra high frequency eruption circuit used LC circuit, and output frequency is possible to 8 [MHz], and output voltage amplified maximum 800 [V]. This operation appliance could display size of fixed current. This developed product could microscopic operation fewer than 1 [mm]. This development technology is considered by do metallic surface heat treatment, melting, welding, induction heating device and that can apply to domestic animals surgical operation and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.127-132
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• 2002

Electricity living body formation operation appliance is using most imports until present. And, because electricity living body formation operation appliance is too expensive, it becomes burden to buy in small scale hospital. Also, problem that economical damage by income is added follows. Therefore, this treatise developed electricity living body formation operation appliance by home production. Ultra high frequency eruption circuit used LC circuit. and output frequency is possible to 8 [MHz], and output voltage amplified maximum 800 [V]. This operation appliance could display size of fixed current. This developed product could microscopic operation fewer than 1 [mm]. This development technology is considered by do metallic surface heat treatment, melting, welding, induction heating device and that can apply to domestic animals surgical operation and so on.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.1-5
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• 2022

In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.1 no.3
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• pp.9-16
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• 2008

We centrally study effect of very high voltage 345kV T/L which is set up at residential area (Yangyang~Donghae in Gangwon-do) to broadcasting radio wave and human body. First, to compare predicted result of radio wave disturbance, we set 7 area 13 point and divide broadcasting quality, electric and magnetic fields in T/L process. Result of estimation, we confirm that when receiving broadcasting radio wave, broadcasting quality's difference is generated by topographic property of near receiving point. also through result of electric fields and broadcasting quality and their comparison, we judge that high voltage T/L is barely affect receive of broadcasting radio wave. To judge effect of magnetic fields to human body, we analyze magnetic fields in variable area and condition. as a result, magnetic fields of every area has 1.8mG(WHO international standard amount is 833mG). So It is proved that magnetic fields of 345kV Yangyang~Donghae area has slight, tiny effect to human body.

• Journal of radiological science and technology
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• v.44 no.4
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• pp.295-300
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• 2021

This study aims to present new chest AP examination exposure conditions through a study on the effect on image quality and patient dose by applying high tube voltage and scatter ray post-processing software during chest AP examination in digital radiography equipment. This study was used a human body phantom and in the chest AP position, the dosimeter was placed horizontally at the thoracic spine 6. The experiment was conducted by dividing into a low tube voltage (70 kVp, 400 mA, 3.2 mAs) group and a high tube voltage (100 kVp, 400 mA, 1.2 mAs) group. The collimation size (14″× 17″) and the source to image receptor distance(110 cm) were same applied to both groups. Radiation dose was presented to dose area product and entrance surface dose. Image quality was compared and analyzed by comparing the difference between the signal-to-noise ratio and the contrast-to-noise ratio of the image according to the application of the scatter ray post-processing software under each condition. The average value of the entrance surface dose in the low and high tube voltage conditions was 93.04±0.45 µGy and 94.25±1.51 µGy, which was slightly higher in the high tube voltage condition, but the dose area product was 0.97±0.04 µGy and 0.93±0.01 µGy. There was a statistically significant difference in the group mean value(p<0.01). In terms of image quality, the values of the signal-to-noise ratio and the contrast noise ratio were higher in the high tube voltage than in the low tube voltage, and decreased when the scattering line post-processing function was used, but the contrast resolution was improved. If there is a scatter ray post-processing function during chest AP examination, it is helpful to actively utilize it to improve the image quality. However, when this function is not available, I thought that applying a higher tube voltage state than a low tube voltage state will help to realize images with a large amount of information without changing the dose.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.413-419
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• 2012

A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

• Journal of the Korean Society of Hazard Mitigation
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• v.7 no.5
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• pp.111-118
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• 2007

Recently electric shock accidents constantly occurs caused by the street lamps. Especially the chance of electric shock accident is high when the street lamp submerges by heavy rainfall. Electric shock accident occurs mostly on the low voltage facilities of 220V, but the awareness of its danger is insufficient. The electric shock accident by street lamp voltage of 220V is very dangerous because it is installed in the street which is easily in contact with people. But there are insufficient investigation concerning the affect to hwnan body of underwater electric potential distribution as the distance changes from the leakage object in case of short circuit. In this thesis, the analysis will be made on the affect of underwater Earth leakage to human body and electric potential distribution in underwater, and to draw a comparison between electric shock channel and electric shock mechanism by experimenting on the affect to human body of underwater electric shock as the distance changes from the leakage object.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.