• Transactions on Electrical and Electronic Materials
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• 제2권4호
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.176-179
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• 2002

Nowadays, CO2 lasers are used widely in many applications such as materials fabrication. communications, remote sensing and military purpose etc. It is important to control the laser output power in those fields. In this paper, current resonant half-bridge inverter and Cockcraft-Walton circuit are used to vary the laser output power. This laser power supply is designed and fabricated which has less switching losses and compact size. Also we used an IGBT(insulated Gate Bipolar Transistor) as a switching device of a power supply and PIC one-chip microprocessor are used to control the gate signal of the IGBT precisely. We investigated the output characteristics of this CO2 laser. As a result. the maximum laser output power of 26 [W] is obtained at the resonant frequency of about 13 [kHz].

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• 센서학회지
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• 제24권5호
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• 전기학회논문지
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• 제63권10호
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• pp.1467-1472
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• 2014

This paper study on powering characteristic on speed variation of propulsion system of prototype 8200 electric locomotive propulsion system through simulation modeling. For this purpose, it being applied in the field of railway IGBT (Insulated Gate Bipolar Transistor) elements are used. Converter was performed PLL (Phase-Locked Loop) control method that is used to control the phase and output voltage, and the inverter was carried an indirect vector control method to control the speed of traction motor. The results of simulation by modeling and experimental unit, we was confirmed that converter is controlled a unity power factor and output voltage by reference voltage. Also traction motor was controlled by indirect vector control and SVPWM inverter switching method very well.

• Journal of Power Electronics
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• 제15권2호
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• pp.299-308
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• 2015

This study proposes four novel pulse width modulation (PWM) shoot-through control methods for impedance source (IS) galvanically isolated DC-DC converters. These methods are derived from a PWM control method with shifted shoot-through introduced by the authors in 2012. In contrast to the baseline solution, where the shoot-through states are generated by the simultaneous conduction of all transistors in the inverter bridge, our new approach is based on the shoot-through generation by one inverter leg. The idea is to increase the number of soft-switched transients and, therefore, decrease the dynamic losses of the front-end inverter. All the proposed approaches are experimentally verified through an insulated-gate bipolar transistor-based IS DC-DC converter. Conclusions are drawn in accordance with the results of the switching loss analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.110-111
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• 2006

이중 에피층을 가지는 SOI (Silicon-On-Insulator) RESURF(REduced SURface Field) LIGBT(Lateral Insulated Gate Bipolar Transistor) 소자의 에피층 두께에 따른 항복전압 특성을 분석하였다. 이중 에 피층 구조를 가지는 SOI RESURF LIGBT 소자는 전하보상효과를 얻기 위해 기존 LIGBT 소자의 n 에피로 된 영역을 n/p 에피층의 이중 구조로 변경한 소자로 n/p 에피층 영역내의 전하간 상호작용에 의해 에피 영역 전체가 공핍됨으로써 높은 에피 영역농도에서도 높은 항복전압을 얻을 수 있는 소자이다. 본 논문에서는 LIGBT 에피층의 전체 두께와 농도를 고정한 상태에서 n/p 에피층의 두께가 변하는 경우에 항복전압 특성의 변화에 대해 simulation을 통해 분석하였다.