• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.71-77
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• 1998

In this paper, algeration of electical characteristics is analyzed when the operating temperature of MOSFET, BJT and CMOS/BiCMOS inverter is lowered from 300K to 77K. As the operating temperature is lowered, electric characteristics of MOSFET are enhanced generally but, those of bipolar transistor are degraded because current gain is reduced by BGN(Band Gap Narrowing) effect. For the inverter considered in this work, switching characteristics of PSA-BiCMOS inverter are enhanced by the electrical characteristics enhancement of MOSFET when the operating temperature is reduced to 200K, while under 200K, those of PSA-BiCMOS inverter are degraded because the degradation of BJT impacts on the inverter circuit.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.64-70
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• 1994

In this paper, we inverstigated how a parricular internal inverter circuit, which is located far from the input protection in CMOS DRAM, can be easily damaged by external ESD stress, while the protection circuit remains intact. It is shown in a mega bit DRAM that the internal circuit can be safe from ESD by simply improving the input protection circuit. An inverter, which consists of a relatively small NMOSFET and a very large PMOSFET, is used to speed up DRAMs, and the small NMOSFET is vulnerable to ESD in case that the discharge current beyond the protection flows through the inverter to Vss or Vcc power lines on chip. This internal circuit damage can not be detected by only measuring input leakage currents, but by comparing the standby and on operating current before and after ESD stressing. It was esperimentally proven that the placement of parasitic bipolar transistor between input pad and power supply is very effective for ESD immunity.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.6
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• pp.777-783
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• 2007

In this work, a highly integrated downconverter MMIC employing HBT(heterojunction bipolar transistor) was developed for application to one chip tranceiver solution of Ku-band commercial wireless communication system. The downconverter MMIC (monolithic microwave integrated circuit) includes mixer filter. amplifier and input/output matching circuit. Especially, spiral inductor structures employing SiN film were used for a suppression of LO and its second harmonic leakage signals. Concretely, they were properly designed so that the self-resonance frequency was accurately tuned to LO and its second harmonic frequency, and they were integrated on the downconverter MMIC.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1566-1571
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• 2003

The cold plate used for a CEU(Control Electronics Unit) of an EV(Electric Vehicle) is extremely important since the dissipation of the heat generated from power devices like IGBT(Insulated Gate Bipolar Transistor) and diode has a significant effect on the performance as well as the durability of the CED. The cold plate consists of seven power devices, and coolant flows through the passage bonded to a groove of the cold plate. In order to find out heat transfer and pressure drop characteristics, series of numerical analyses for the cold plate with enhanced coolant passages were conducted. Based on results of the numerical analyses, an improved model of the cold plate has been proposed. The experiments under the various conditions have been conducted to compare the performance of the proposed cold plate to the present one. As a result of the numerical analyses together with the experiments, the ideal design of the cold plate could be offered.

• Journal of IKEEE
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• v.11 no.4
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• pp.247-251
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• 2007

The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.212-215
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• 1999

High-speed device is essential to optoelectric IC for optical storage system such as CD-ROM, DVD, and to ADC for high-speed communication system. This paper represents the BiCMOS process which contains high-speed SAVEN bipolar transistor and analyzes the frequency and switching characteristics of it briefly. Finally, to prove that the SAVEN device is adequate for high-speed system, latched comparator operating at 500MHz is designed with the SPICE parameter extracted from BiCMOS device simulation.

• JOURNAL OF ELECTRICAL WORLD
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• s.263
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• pp.67-78
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• 1998

최근 파워일렉트로닉스기술의 급속한 진보로 인버터 응용기기가 폭넓은 분야에 이용되어 자에너지화에 크게 기여하고 있다. 그러나 반면에 이들 기기로 부터는 전기의 공해라고도 할 수 있는 고조파전류가 발생하고 있다. 이와 같은 배경에서 $\ulcorner$고압 또는 특별고압으로 수전하는 수용가의 고조파 억제대책 가이드라인$\lrcorner$이 제정되어 앞으로 인버터 기기류를 다수 설치하는 수용가에서는 고조파억제대책을 세워야 하는데 그 기기로서 액티브 필터(Active Filter)가 주목을 받고 있다. 액티브 필터는 $\cdot$고속응답성을 갖춘 IGBT(Insulted Gate Bipolar Transistor)소자를 사용한 인버터에 의하여 여러 가지 고조파를 한번에 억제할 수 있다. $\cdot$IGBT소자의 채용에 의한 소형화로 자스페이스$\cdot$저소음화를 실현할 수 있다. $\cdot$액티브 필터는 전원계통을 변경하더라도 설비특성을 변경할 필요가 없다. $\cdot$액티브 필터는 고조파전류가 증가하여도 과부하가 되는 일이 없다. 등 기존의 L-C필터(패시브 필터)에는 없는 우수한 특징을 갖추고 있어, 일반제조업 이외에도 테넌트(임대) 빌딩이나 극장(홀)에도 적용시킬 수 있는 고조파대책의 유효한 수단이 되고 있다.

• Proceedings of the KSR Conference
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• 2007.11a
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• pp.1438-1444
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• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.15-22
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• 1997

A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.