• Title/Summary/Keyword: bias effect

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Substrate Bias Voltage Dependence of Electrical Properties for ZnO:Al Film by DC Magnetron Sputtering (Bias 전압에 따른 ZnO:Al 투명전도막의 전기적 특성)

  • 박강일;김병섭;임동건;이수호;곽동주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.738-746
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    • 2004
  • Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

Experimental Investigation of Output Current Variation in Biased Silicon-based Quadrant Photodetector

  • Liu, Hongxu;Wang, Di;Li, Chenang;Jin, Guangyong
    • Current Optics and Photonics
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    • v.4 no.4
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    • pp.273-276
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    • 2020
  • We report on the relationship between output current for quadrant photodetector (QPD) and bias voltage in silicon-based p-i-n (positive-intrinsic-negative) QPD examined using millisecond pulse laser (ms pulse laser) irradiation. The mechanism governing the relationship was further studied experimentally. The output current curves were obtained by carrying out QPD under different bias voltages (0-40 V) irradiated by ms pulse laser. Compared to other photodetectors, the relaxation was created in the output current for QPD which is never present in other photodetectors, such as PIN and avalanche photodetector (APD), and the maximum value of relaxation was from 6.8 to 38.0 ㎂, the amplitude of relaxation increases with bias value. The mechanism behind this relaxation phenomenon can be ascribed to the bias voltage induced Joule heating effect. With bias voltage increasing, the temperature in a QPD device will increase accordingly, which makes carriers in a QPD move more dramatically, and thus leads to the formation of such relaxation.

Effect of Proton Irradiation on the Magnetic Properties of Antiferromagnet/ferromagnet Structures

  • Kim, Dong-Jun;Park, Jin-Seok;Ryu, Ho Jin;Jeong, Jong-Ryul;Chung, Chang-Kyu;Park, Byong-Guk
    • Journal of Magnetics
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    • v.21 no.2
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    • pp.159-163
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    • 2016
  • Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

Factors Influencing on the Intention to Use Serious Games for Healthcare: The Perspective of Valence Framework (건강 기능성 게임의 수용에 영향을 주는 요인: 감정가 프레임워크 관점)

  • Yong-Young Kim
    • Journal of Information Technology Applications and Management
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    • v.31 no.1
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    • pp.97-112
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    • 2024
  • In order to verify the factors affecting the acceptance of Serious Games for Healthcare (SGHs), this study developed a hierarchical model of general and specific benefit and risk factors affecting the intention to use SGHs based on the valence framework. As a result based on 199 samples, it was revealed that perceived customization and perceived schedule flexibility had a positive effect on the perceived benefits, which, in turn, had a positive effect on the intention to use SGHs. However, among the specific risk factors, only privacy risk had a positive effect on perceived risk, but it did not have a effect on SGHs usage intention. The results related to the fact that the survey respondents were potential users of SGHs and the bias that may overestimate the benefits provided by SGHs called optimistic bias. Based on these findings, some implications were presented such as the spread and distribution of SGHs to the ordinary persons, improvement of negative perceptions of games, and the need for data-based services to refine customized services for SGHs.

Study on diffusion barrier properties of Tantalum films deposited by substrate bias voltage (Ta 확산 방지막 특성에 미치는 기판 바이어스에 관한 연구)

  • ;;Minoru Isshiki
    • Journal of the Korean Vacuum Society
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    • v.12 no.3
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    • pp.174-181
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    • 2003
  • Ta diffusion barriers have been deposited on Si (100) substrate by applying a negative substrate bias voltage. The effect of the substrate bias voltage on the properties of the Ta films was investigated. In the case of the Ta films deposited without the substrate bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Ta films was very high (250 $\mu\Omega$cm). By applying the substrate bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of the Ta films decreased remarkably and at a bias voltage of -125 V, reaching a minimum value of 40 $\mu\Omega$cm, which is close to that of Ta bulk (13 $\mu\Omega$cm). The thermal stability of Cu(100 mm)/Ta(50 mm)/Si structures was evaluated after annealing in H2 atmosphere for 60 min at various temperatures. The Ta films deposited by applying the substrate bias voltage were found to be stable up to $600^{\circ}C$, while the Ta films deposited without the substrate bias voltage degraded at $400^{\circ}C$.

A Systematic Review on the Effects of Group Art Therapy on the Older with Dementia (집단미술치료가 치매 노인에게 미치는 영향에 대한 체계적 고찰)

  • Kim, Do-Yoen;Lee, Hye-Mi;Bae, Ji-Woo;Jung, Nam-Hae
    • Journal of The Korean Society of Integrative Medicine
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    • v.10 no.4
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    • pp.71-81
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    • 2022
  • Purpose : This study aimed to present evidence by analyzing the characteristics and effectiveness of group art therapy interventions through an examination of domestic studies on group art therapy for older people with dementia. Methods : The database used DBpia, Riss, and Google Scholar, and the research period was from 2016 to November 2021. For the selected studies, the level of evidence was analyzed, bias evaluation was performed, and patient, intervention, comparison, and outcome were analyzed. For the evaluation of bias, the risk of bias assessment tool for non-randomized study (RoBANS) and Cochrane's risk of bias (RoB) were used. Results : As for the level of evidence of the included studies, level I consisted of five studies, and levels II and III each had one article. As a result of the bias evaluation of five studies through RoB, a "low risk of bias" was found for incomplete result data, selective result reporting, and others, except for four unclear evaluation areas. The "low risk of bias" ratio was 0~25 % in the evaluation of bias in two studies through RoBANS. For the evaluation tool, cognitive evaluation tool was used the most while mini-mental state examination-Korea was used the most frequently. For the intervention method, the most frequently used was group art therapy that employed recall in three studies, while collage, Korean painting, use of paper media, and procedural memory were used in each of the other studies. Each intervention was found to be significantly effective overall. Conclusion : This study provided clinical evidence by systematically reporting research on group art therapy for older people with dementia. In the future, it is necessary to check the effect of group art therapy on various areas other than cognition for older people with dementia. Moreover, the study should be conducted with the risk of bias sufficiently taken into consideration.

Effect of Bias on the Pearson Chi-squared Test for Two Population Homogeneity Test

  • Heo, Sunyeong
    • Journal of Integrative Natural Science
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    • v.5 no.4
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    • pp.241-245
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    • 2012
  • Categorical data collected based on complex sample design is not proper for the standard Pearson multinomial-based chi-squared test because the observations are not independent and identically distributed. This study investigates effects of bias of point estimator of population proportion and its variance estimator to the standard Pearson chi-squared test statistics when the sample is collected based on complex sampling scheme. This study examines the effect under two population homogeneity test. The standard Pearson test statistic can be partitioned into two parts; the first part is the weighted sum of ${\chi}^2_1$ with eigenvalues of design matrix as their weights, and the additional second part which is added due to the biases of the point estimator and its variance estimator. Our empirical analysis shows that even though the bias of point estimator is small, Pearson test statistic is very much inflated due to underestimate the variance of point estimator. In the connection of design-based variance estimator and its design matrix, the bigger the average of eigenvalues of design matrix is, the larger relative size of which the first component part to Pearson test statistic is taking.

The Effect of Bias and Shear Angles on Compressive Characteristics of Carbon/Epoxy Plain Weave Fabrics (편향각과 전단각이 탄소섬유/에폭시 평직 복합재료의 압축특성에 미치는 영향)

  • Kim Sung-Jip;Chang Seung-Hwan
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.7 s.250
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    • pp.857-864
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    • 2006
  • Various compressive specimens were fabricated using autoclave do-gassing moulding to find out the compressive characteristics of the carbon/epoxy plain weave fabric composites with respect to the bias and shear angles. The stacking angles of the bias specimens are $[0]_{10T,}\;[3]_{10T,}\;[6]_{10T,}\;[9]_{10T,}\;[12]_{10T,}\;[15]_{10T,}\;[30]_{10T,}\;[45]_{10T}$ and those of the sheared specimens are $[{\pm}37]_{10T,}\;[{\pm}32]_{10T,}\;[{\pm}28]_{10T,}\;[{\pm}22]_{10T,}$ respectively. In order to verify the effect of micro-tow structures on compressive strength and modulus of the composites, compressive test specimens of uni-directional carbon/epoxy composites with the same materials and the same stacking conditions were fabricated. The modulus and strength of both types of composite specimens were compared with the prediction results based on the CLPT and a proposed strength formula. The tow deformation and fracture modes were investigated by microscopic observation.

Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction

  • Kim, Hogyoung;Lee, Da Hye;Myung, Hye Seon
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.412-416
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    • 2016
  • The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

Effects of Drain Bias on Memory-Compensated Analog Predistortion Power Amplifier for WCDMA Repeater Applications

  • Lee, Yong-Sub;Lee, Mun-Woo;Kam, Sang-Ho;Jeong, Yoon-Ha
    • Journal of electromagnetic engineering and science
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    • v.9 no.2
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    • pp.78-84
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    • 2009
  • This paper represents the effects of drain bias on the linearity and efficiency of an analog pre-distortion power amplifier(PA) for wideband code division multiple access(WCDMA) repeater applications. For verification, an analog predistorter(APD) with three-branch nonlinear paths for memory-effect compensation is implemented and a class-AB PA is fabricated using a 30-W Si LOMaS. From the measured results, at an average output power of 33 dBm(lO-dB back-off power), the PA with APD shows the adjacent channel leakage ratio(ACLR, ${\pm}$5 MHz offset) of below -45.1 dBc, with a drain efficiency of 24 % at the drain bias voltage($V_{DD}$) of 18 V. This compared an ACLR of -36.7 dEc and drain efficiency of 14.1 % at the $V_{DD}$ of 28 V for a PA without APD.