• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.61-64
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• 2002

We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.492-499
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• 2013

We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.226-235
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• 1999

To investigate SPICE noise model and the behavior of its parameters, 1/f noise of NMOS devices fabricated by BiCMOS process is measured and compared to the various noise models and measured results. For the long channel devices, bias dependence of the drain current noise power spectral density $S_{Id}$ of NMOS is similar to the previous results. Equivalent gate noise power spectral density $S_{Vg}$ shows weak dependence on the gate and drain voltages in long channel NMOS as the previous results. However, it is shown that most of published noise models are difficult to apply to short channel devices. Therefore, in this study, with comparison of our experimental results, we have tried to find the model of 1/f noise, appropriate for our NMOS device fabricated by BiCMOS process.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• v.12 no.2
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• pp.275-281
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• 2001

This study examined the relationship between psychopathology(depression, anxiety, aggression), maladaptive cognitions(negative cognitive errors, attributional biases), and age of children with ADHD. 40 ADHD children and their mother completed questionnaires assessing depression, anxiety, aggression level and maladaptive cognitions of children. The results showed that maladaptive cognitions of children with ADHD was not significantly associated with their depression, anxiety, aggression level. Age was negatively related to internal stable attributions for negative events that was characteristic in depression, and had significantly effect on internal stable attributions for negative events. As age of ADHD children increased, their internal attribution for negative events reduced. It seems that their depression and anxiety level is associated with current stress event rather than maladaptive cognitions. Suggestions and limitations of this study, and the directions for future study were discussed.

• Journal of the Korean Solar Energy Society
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• v.29 no.6
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• pp.102-109
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• 2009

The research on meteorological data in Korea has been carried out but without much consistency and has been limited to some areas only. Of relatively more importance has been the area in the utilization of the solar energy, however, the measurement of the global solar horizontal irradiation has been quite limited. In the current study, the actually measured value of the global solar horizontal irradiation from the meteorological data and the theoretically calculated value of the global solar horizontal irradiation from the cloud amount will be analyzed comparatively. The method of analysis will employ the standard meteorological data drafted by the Korean Solar Energy Society, the standard meteorological data from the presently used simulation program and the corresponding results have been compared with the calculated value of the global solar horizontal irradiation from the cloud amount. The results of comparing the values obtained from MBE(Mean Bias Error), RMSE(Root Mean Squares for Error), t-Statistic methods and those from each of the standard meteorological data show that the actually measured value of the meteorological data which have been converted into standard meteorological data with the help of the ISO TRY method give the monthly average value of the global solar horizontal irradiation. These values compared with the monthly average value from the IWEC from the Department of Energy of the USA show that the value of the global solar horizontal irradiation in the USA is quite similar. In the case of the values obtained from calculation from the cloud amount, the weather data provided by TRNSYS, except only slight difference, which means that the actually measured values of the global solar horizontal irradiation are significant. This goes to show that in the case of Korea, the value of the global solar horizontal irradiation provided by the Korea Meteorological Administration is will be deemed correct.

• STI Policy Review
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• v.4 no.2
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• pp.41-54
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• 2013

R&D is inherently an uncertain endeavor, yet now more than ever those performing R&D with public funding are called upon to clarify the utility of their research. Calls for public accountability are mounting with the increase in constraints on government budgets due to the recent worldwide economic recession, in response to which both policymakers and researchers pay much more attention to rigorously assessing publicly funded R&D. A key issue complicating R&D evaluation in these circumstances is how to adequately account for the nature and degree of risk involved in a given R&D program or project. This study deliberates on certain issues involving the measurement of ex-ante risk in public R&D evaluation: (i) information asymmetry between R&D sponsors and performers, (ii) ambiguity in the measurement of returns in both prospective and retrospective evaluation, and (iii) the dilemma between measurement error and omitted variable bias for empirical estimation of R&D performance. The study then presents an analysis of hypothetical evaluation results that apply risk-relevant weights to the annual evaluation outcomes of South Korea's national R&D programs funded during 2006~2012. In this counterfactual re-evaluation of public R&D program performance, high-risk R&D programs turn out to receive higher evaluation than non-high-risk programs. The current study suggests that R&D evaluation ignoring ex-ante risk is not only conceptually invalid since R&D activities are intrinsically uncertain endeavors, but unfair as R&D performers are asked to be accountable for the results that were in fact out of their reach.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.27 no.3
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• pp.128-136
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• 2015

Reducing the building energy consumption has become one of the most important issues. However, the current engineering and technological involvement in energy analysis has been relatively low in the existing buildings. In the existing buildings, end-use analysis must be accompanied to calculate the exact amount in energy savings and such analysis should be conducted based on the energy billing data or measurement data by calibration process. Mostly, detailed energy simulation programs have been proposed for the analysis but, it is difficult to utilize them due to realistic problems. In this paper, we developed an end-use analysis tool that have input function for energy audit data and two case studies were conducted in the real-life office buildings located in Seoul, Korea. Mean Bias Error (MBE) and Coefficient of Variation of Root-Mean- Squreaed-Error (CV(RMSE)) are used for the criteria of comparison. Each index was calculated by using monthly utility bills of electricity and gas consumption. Results showed that MBE and CV (RMSE) represented with acceptable values of -0.1% and 5.7% respectively.

• Journal of the Korea Society for Simulation
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• v.23 no.3
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• pp.27-32
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• 2014

In this paper, We are going to propose the novel structure with improved behavior than the conventional vertical structure for VLSI CMOS circuits. For this, the proposed structure is the moat shape for STI. We want to analysis the characteristics of simulations about the electron concentration distribution, oxide layer shape of hot electron stress, potential flux and electric field flux, electric field fo themal damage and current-voltage characteristics in devices. Physically based models are the ambient and stress bias conditions of TCAD tool. As a analysis results, shallow trench structure were trended to be electric functions of passive as device dimensions shrink. The electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage, are decreased the stress effects of active region. The fabricated device of based on analysis results data were the almost same characteristics of simulation results data.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.113-119
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• 1994

We fabricated and characterized RWG-DFB-LDs emitting at $1.3\mu\textrm{m}$ wavelength. For fabrication of the laser diode, inteference fringe of optical beams was used for grating formation and epi layers were grown by LPE. The fablicated RWG-DFB-LD operated in a single longitudinal mode with more than 30 dB SMSR at 1296.5 nm emitting wavelength and its threshold current was 67 mA. Coupling coefficient (K) was estimated as $40cm^{-1}$ by means of stop-band measurement. Finally, we show that the RWG-DFB-LD fabricated in this experiment can be applicable as light source of 2.5 Gbps optical communication system from the fact that the small signal response of the RWG-DFB-LD rated up to 1.99 GHz at pre-bias level of $1.2 I_{th}$..