Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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1/f Noise Characteristics of N-MOSFETS fabricated by BiCMOS process

BiCMOS공정 N-MOSFET 소자의 1/f 잡음특성

  • Koo, Hoe-Woo (Dept. of Electronic Eng., Chungbuk National Univ.) ;
  • Lee, Kie-Young (Dept. of Electronic Eng., Chungbuk National Univ.)
  • Published : 1999.12.01
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Abstract

To investigate SPICE noise model and the behavior of its parameters, 1/f noise of NMOS devices fabricated by BiCMOS process is measured and compared to the various noise models and measured results. For the long channel devices, bias dependence of the drain current noise power spectral density $S_{Id}$ of NMOS is similar to the previous results. Equivalent gate noise power spectral density $S_{Vg}$ shows weak dependence on the gate and drain voltages in long channel NMOS as the previous results. However, it is shown that most of published noise models are difficult to apply to short channel devices. Therefore, in this study, with comparison of our experimental results, we have tried to find the model of 1/f noise, appropriate for our NMOS device fabricated by BiCMOS process.

SPICE잡음모델식 및 그 모델변수들의 특성을 조사하기 위하여, BiCMOS공정으로 제조된 NMOS소자에서 1/f 잡음을 측정하여 기존에 발표된 1/f 잡음의 실험결과 및 모델들과 비교해 보았다. 일반적으로 알려진 드레인 잡음전류의 전력밀도 스펙트럼 $S_{Id}$의 게이트 바이어스 의존도 및 드레인 전압에 따른 그 특성이 본 연구의 n-MOSFET소자에서도 측정되었다. 등가게이트 전압잡음전력밀도 $S_{Vg}$의 바이어스 의존도도 채널의 길이가 비교적 길 때에는 이론 및 실험적으로 알려진 결과와 대체적으로 일치하나, 짧은 채널에서는 $S_{Id}$ 및 $S_{Vg}$에 관한 기존 모델들의 적용이 타당하지 않았다 그러므로 본 논문에서는 서로 상이한 잡음모델들을 비교해서 본 연구의 시료소자인 BiCMOS공정에 적용 가능한 1/f 잡음모델을 모색하였다.

Keywords

References

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