• 제목/요약/키워드: barrier properties

검색결과 984건 처리시간 0.025초

전위 장벽에 따른 4H-SiC MPS 소자의 전기적 특성과 깊은 준위 결함 (Electrical Characteristics and Deep Level Traps of 4H-SiC MPS Diodes with Different Barrier Heights)

  • 변동욱;이형진;이희재;이건희;신명철;구상모
    • 전기전자학회논문지
    • /
    • 제26권2호
    • /
    • pp.306-312
    • /
    • 2022
  • 서로 다른 PN 비율과 금속화 어닐링 온도에 의해 장벽 높이가 다른 4H-SiC 병합 PiN Schottky(MPS) 다이오드의 전기적 특성과 심층 트랩을 조사했다. MPS 다이오드의 장벽 높이는 IV 및 CV 특성에서 얻었다. 전위장벽 높이가 낮아짐에 따라 누설 전류가 증가하여 10배의 전류가 발생하였다. 또한, 심층 트랩(Z1/2 및 RD1/2)은 4개의 MPS 다이오드에서 DLTS 측정을 통해 밝혀졌다. DLTS 결과를 기반으로, 트랩 에너지 준위는 낮은 장벽 높이와 함께 22~28%의 얕은 수준으로 확인되었다. 이는 쇼트키 장벽 높이에 대해 DLTS에 의해 결정된 결함 수준 및 농도의 의존성을 확인할 수 있다.

구리이온의 확산에 대한 IMD(Inter-Metal Dielectric)용 Low-k 물질인 SiOCH와 diffusion barrier Ta의 특성에 관한 연구 (A study of properties which the diffusion barrier Ta and IMD(Inter-Metal Dielectric) metrial SiOCH for $Cu^+$ ion diffusion)

  • 김정우;송진형;최용호;김지균;이헌용
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2004년도 하계학술대회 논문집 C
    • /
    • pp.1697-1699
    • /
    • 2004
  • In this investigation, we have studied the diffusion of the $Cu^+$ ion in the Cu/Ta/SiOCH/Si and Cu/Ta/$SiO_2$/Si MIS-C structure. The Cu ions diffusion into the Ta barrier and SiOCH was examined by shift in flatband voltage of capacitance-voltage measurement and leakage current of current-voltage measurement. These evalution indicated that $Cu^+$ ion diffusion rate in Ta/SiOCH is considerably lower then the Ta/$SiO_2$ structure. And diffusion barrier Ta(50[nm]) is useful barrier against $Cu^+$ ion diffusion up to 450$^{\circ}C$.

  • PDF

분무건조 및 대기 플라즈마 용사에 의한 탄화규소 세라믹스용 내환경 코팅재의 제조 및 평가 (Fabrication and Characterization of Environmental Barrier Coatings by Spray Drying and Atmospheric Plasma Spraying for Protection of Silicon Carbide Ceramics)

  • 풍범걸;문흥수;곽찬원;박지연;이기성
    • 한국세라믹학회지
    • /
    • 제51권5호
    • /
    • pp.481-486
    • /
    • 2014
  • Environmental barrier coatings (EBCs) are used to protect SiC-based ceramics or composites from oxidation and corrosion due to reaction with oxygen and water vapour at high temperatures above $1000^{\circ}C$. Mullite ceramics have been studied for environmental barrier coatings for Si-based ceramics. More recently, rare earth silicate ceramics have been identified as more water vapour-resistant materials than mullite for environmental barrier coatings. In this study, we fabricate mullite and yttrium silicate ceramics by an atmospheric plasma spray coating method using spherical granules fabricated by spray drying. As a result, EBCs with thicknesses in the range of $200-300{\mu}m$ are successfully fabricated without any macroscopic cracks or interfacial delamination. Phase and microstructure analysis are conducted, and the basic mechanical properties, such as hardness and indentation load-displacement curves are evaluated.

SiO2와 Al2O3를 충진재료로 사용하는 초고압 GIS용 에폭시 절연물 베리어의 전기적 및 기계적 특성에 관한 연구 (A Study on Electrical and Mechanical Properties of Epoxy Insulation Barrier for High Voltage GIS Using a Filler of SiO2 and Al2O3)

  • 서왕벽;배동호
    • 한국전기전자재료학회논문지
    • /
    • 제28권6호
    • /
    • pp.379-383
    • /
    • 2015
  • Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as $SiO_2$ instead of $Al_2O_3$ properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

Mechanical Tenacity Analysis of Moisture Barrier Bags for Semiconductor Packages

  • Kim, Keun-Soo;Kim, Tae-Seong;Min Yoo;Yoo, Hee-Yeoul
    • 마이크로전자및패키징학회지
    • /
    • 제11권1호
    • /
    • pp.43-47
    • /
    • 2004
  • We have been using Moisture Barrier Bags for dry packing of semiconductor packages to prevent moisture from absorbing during shipping. Moisture barrier bag material is required to be waterproof, vapor proof and offer superior ESD (Electro-static discharge) and EMI shielding. Also, the bag should be formed easily to the shape of products for vacuum packing while providing excellent puncture resistance and offer very low gas & moisture permeation. There are some problems like pinholes and punctured bags after sealing and before the surface mount process. This failure may easily result in package pop corn crack during board mounting. The bags should be developed to meet the requirements of excellent electrical and physical properties by means of optimization of their raw material composition and their thickness. This study investigates the performance of moisture barrier bags by characterization of their mechanical endurance, tensile strength and through thermal analysis. By this study, we arrived at a robust material composition (polyester/Aluminate) for better packing.

  • PDF