Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

A study of properties which the diffusion barrier Ta and IMD(Inter-Metal Dielectric) metrial SiOCH for $Cu^+$ ion diffusion

구리이온의 확산에 대한 IMD(Inter-Metal Dielectric)용 Low-k 물질인 SiOCH와 diffusion barrier Ta의 특성에 관한 연구

  • Kim, J.W. (Electrical Electronic and Materials Lab, Myong Ji University) ;
  • Song, J.H. (Electrical Electronic and Materials Lab, Myong Ji University) ;
  • Choi, Y.H. (Electrical Electronic and Materials Lab, Myong Ji University) ;
  • Kim, J.G. (Electrical Electronic and Materials Lab, Myong Ji University) ;
  • Lee, H.Y. (Electrical Electronic and Materials Lab, Myong Ji University)
  • 김정우 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 송진형 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 최용호 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김지균 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 이헌용 (명지대학교 전기공학과 전기전자재료연구실)
  • Published : 2004.07.14
Download PDF
⟨ Previous Next ⟩

Abstract

In this investigation, we have studied the diffusion of the $Cu^+$ ion in the Cu/Ta/SiOCH/Si and Cu/Ta/$SiO_2$/Si MIS-C structure. The Cu ions diffusion into the Ta barrier and SiOCH was examined by shift in flatband voltage of capacitance-voltage measurement and leakage current of current-voltage measurement. These evalution indicated that $Cu^+$ ion diffusion rate in Ta/SiOCH is considerably lower then the Ta/$SiO_2$ structure. And diffusion barrier Ta(50[nm]) is useful barrier against $Cu^+$ ion diffusion up to 450$^{\circ}C$.

Keywords