Effects of oxygen additive on structural properties and metal/diamond junction characteristics of nano-crystalline diamond thin films

산소첨가가 나노결정 다이아몬드 박막의 구조적 물성 및 금속과의 접합특성에 미치는 영향

  • Choi, Sung-Ho (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jae-Hyun (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Chang-Kyun (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 최성호 (한양대학교 전자전기제어계측공학과) ;
  • 박재현 (한양대학교 전자전기제어계측공학과) ;
  • 박창균 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Published : 2004.07.14

Abstract

Diamond films including nanocrystallites are grown by microwave plasma chemical vapor deposition using $O_2$ additives and negative substrate bias at growth step. Effects of growth parameters on film properties are characterized by Raman spectra, SEM, and AFM images. It is found that the surface roughness and the microstructure of grown films can be controlled by changing $O_2$ gas ratio. The I-V characteristics are also investigated in terms of growth conditions of diamond films. The surface roughness and the $sp^2$ phase of the grown diamond films turn out to be crucial factors for reducing leakage currents at diamond/metal interfaces.

Keywords