• International Journal of Precision Engineering and Manufacturing-Green Technology
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• v.9
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• pp.485-492
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• 2021

The athermal effect of electric current during electrically assisted (EA) annealing, which is a simple and cost-effective heat treatment technique, is assessed by comparing the performances of EA annealing and induction heat treatment (IHT), using aluminum alloy specimens with a high dislocation density from cold rolling. The dislocation densities after EA annealing and IHT are calculated using X-ray diffraction data to compare the performance of the processes. The performance of EA annealing clearly surpasses that of IHT in a certain temperature range. However, at higher temperatures, the thermal effect alone is able to induce nearly complete annihilation of dislocation density, thus, the practical advantage of EA annealing may diminish.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.333-336
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• 2006

High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.03b
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• pp.112-115
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• 1999

The effect of intermediate annealing on the texture evolution in I.f steel was investigated by using X-ray texture measurement. After The sample was cold rolled to 80% reduction intermediate annealing was introduced to preform ${\gamma}$-fiber orientation grains in deformed matrix. The annealing time was varied between 30 and 3600 sec, These samples were cold rolled to 90% reduction and full annealed. By intermediate annealing final full annealed samples had very homogeneous ${\gamma}$-fiber orientation resulting in good deep drawability.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.63-63
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• 1999

The stability of hydrogenated amorphous silicon (a-Si:H) films under the light soaking are very important since the applications of a-Si:H films are solar cells, color sensors, photosensors, and thin film transistors(TFTs). We found the changes of the electric conductivity and the conductivity activation energy (Ea) of a-Si:H films by argon radical annealing. The deposition rate of a-Si:H films depends on the argon radical annealing time. The optical band gap and the hydrogen contents in the a-Si:H films are changes along the argon radical annealing time. We will discuss the microscopic processes of argon radical annealing in a-si:H films.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.939-944
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• 2001

Genetic algorithm is modelled on natural evolution and simulated annealing is based on the simulation of thermal annealing. Both genetic algorithm and simulated annealing are stochastic method. So they can find global optimum values. For compare efficiency of SA and GA's, some function value was maximized. In the result, that was a little better than GA's.

• Applied Biological Chemistry
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• v.34 no.2
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• pp.187-189
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• 1991

Gelatinization temperatures of upland and lowland waxy brown rice starches annealed at $25^{\circ}C$ and $60^{\circ}C$ for 24hr were investigated with differential scanning calorimetry No annealing effect was observed at low temperature. The upland rice starch showed narrower range of gelatinization temperature upon annealing treatment at $60\circ}C$ compared with the lowland rice starch. The enthalpy of gelatinization was not changed in case of the upland rice starch but was increased in case of the lowland one upon annealing.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.167-171
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• 2005

In this paper, the resonance characteristics of SMR-type FBAR devices annealed by three different annealing methods are investigated and compared. The resonance characteristics could be effectively improved by the proposed efficient annealing method which optimizes the annealing conditions. It seems very useful for improving the performance of the SMR-type FBAR devices as a cost-effective way.

• Transactions of Materials Processing
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• v.13 no.5
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• pp.449-454
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• 2004

The annealing behavior of a 5083 Al alloy deformed at cryogenic temperature was investigated, focusing on the evolution of microstructures and mechanical properties. Especially, the effects of annealing temperature, $150~300^{\circ}C$, and time, 3∼60min., on microstructures and mechanical properties of the sheets received 85% reduction at cryogenic temperature were investigated. The optimization of the annealing conditions resulted in a mixture of equiaxed grains and elongated subgrains, exhibiting a good combination of uniform elongation and high strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.