한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.333-336
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- 2006
Improvement in Characteristics of Thin Film Transistors by High Pressure Steam Annealing
- Nagasawa, Y. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
- Yamamoto, N. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
- Chishina, H. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
- Ogawa, H. (Ishikawajima-Harima Heavy Industries Co.,Ltd.) ;
- Kawasaki, Y. (Ishikawajima-Harima Heavy Industries Co.,Ltd.)
- Published : 2006.08.22
Abstract
High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.
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