• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.128-132
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• 1998

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1240-1243
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• 2008

The tempering and magnetic annealing are used to improve the soft magnetic properties such as initial permeability coercivity and core loss of the KM35F alloy. The first heat treatmentis performed at the temperature less than the curie temperature of the KM35F alloy to remove the thermal stress for few hours in nitrogen atmosphere. The second stage heat treatment is performed the magnetic annealing at $500{\sim}800^{\circ}C$ for few hours in nitrogen atmosphere, and then quenching to room temperature in absence of oxygen. Finally, magnetic properties of the thermally treated KM35F alloy are investigated for application as a soft magnetic material of the ISO solenoid valve core and plunger.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 추계학술대회논문집A
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• pp.381-386
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• 2000

Simple spring-damper-mass models have been widely used to understand whole-body vertical biodynamic response characteristics of the seated vehicle driver. However, most previous models have not considered about the non-rigid masses(wobbling masses). A simple mechanical model of seated human body developed in this study included the torso represented by a rigid and a wobbling mass. Within the 0.5-20Hz frequency range and for excitation amplitudes maintained below $5ms^{-2}$, this 4-degree-of-freedom driver model is proposed to satisfy the measured vertical vibration response characteristics defined from a synthesis of published data for subjects seated erect without backrest support. The parameters are identified by using the combinatorial optimization technique, simulated annealing method. The model response was found to be provided a closer agreement with the response characteristics than previously published models.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.112-112
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• 2010

Zinc Oxide (ZnO) thin-films were deposited according to the magnetron sputtering method. The deposited ZnO films were annealed with RTA equipment at various annealing temperatures in an vacuum ambient. The influence of the annealing temperature on the structural, electrical, and optical properties of the ZnO films was experimentally investigated, and the effect of conductivity of the ZnO active layer on the device performance of the oxide-TFT was tested. As a result, an increase of the annealing temperature was attributed to improvements of crystallinity in ZnO films. The grain size was found to lead to an increase of conductivity in the ZnO films. Fabricated ZnO TFTs with annealed ZnO active layer provided good performance in the TFT devices. Consequently, the performance of the TFT was determined by the conductivity of the ZnO film, which was related to the structural properties of the ZnO film.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.725-728
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, We have systematically investigated the variation of grain sizes depending on the process condition of two-step process. Both in-situ annealing and ex-annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current, XRD and SEM were performed to investigate the electircal properties and microstructural properties of Pb(La, Ti)O$_3$ films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.52-55
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• 1988

Tunsten silicide (WSix) films on polycrystalline silicon were formed by low-pressure chemical vapor deposition (LPCVD) and were annealed in $N_2$ for 30 mins at various temperatures. The annealing behaviors of tungsten silicide films have been investigated by electrical resistivity measurements, X-ray diffraction methods, scanning electron microscopy (SEM) and Hall measurements. The electrical resistivity decreased almost linearly with increasing annealing temperature and reached $35{\mu}{\Omega}-cm$ at $1000^{\circ}C$ annealing. The X-ray and SEM analyses indicate that crystallization of $WSi_2$ and grain growth occurs when annealed above $1000^{\circ}C$. Excess silicon redistribution occurs considerably when annealed above $1000^{\circ}C$. By Hall measurements, the carrier type for specimens annealed at $1000^{\circ}C$ was found to be positive holes, while the carriers were electrons in the specimens that were annealed at $800^{\circ}C$.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.256-256
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• 2000

In this parer, we present a real-time path planning algorithm which is integrated the artificial potential field(APF) and simulated annealing(SA) methods for mobile robot. The APF method in path planning has gained popularity since 1990's. It doesn't need the modeling of the complex configuration space of robot, and is easy to apply the path planning with simple computation. However, there is a major problem with APF method. It is the formation of local minima that can trap the robot before reaching its goal. So, to provide local minima recovery, we apply the SA method. The effectiveness of the proposed algorithm is verified through simulation.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.140-140
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• 2000

Traditional genetic algorithms, though robust, are generally not the most successful optimization algorithm on any particular domain. Hybridizing a genetic algorithm with other algorithms can produce better performance than both the genetic algorithm and the other algorithms. In this paper, we use random process and simulated annealing instead of mutation operator in order to get well tuned fuzzy rules. The key of this approach is to adjust both the width and the center of membership functions so that the tuned rule-based fuzzy controller can generate the desired performance. The effectiveness of the proposed algorithm is verified by computer simulation.

• Progress in Superconductivity
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• 제12권1호
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• pp.32-35
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• 2010

Potassium doped $BaFe_2As_2$ superconducting thin films by using an ex situ pulsed laser deposition technique were fabricated in various conditions to find out an optimal growth condition. Controlled conditions were annealing temperature, annealing time, and mass of potassium. The $Ba_{1-x}K_xFe_2As_2$ thin films which has most good quality is fabricated at a condition of annealing temperature at $700^{\circ}C$, annealing time of 60 minutes, and 0.6 g of potassium lumps. In this condition we were able to fabricate good quality films with high transition temperature of ~ 39 K.