• 전자공학회논문지A
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• 제29A권8호
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• pp.89-98
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• 1992

IIM(Implantation Into Metal) process usning Co silicides has been investigated to obtain ultra-shallow junctions less than 0.1$\mu$m. Rapid Thermal Annealing using halogen lamps was employed to form CoSi$_2$ and junctions simultaneously.. Resistivities of CoSi$_2$ were 13-17$\mu$ $\Omega$-cm. CoSi$_2$/p$^{+}$/Si and CoSi$_2$/n$^{+}$/Si junction were formed by diffusion of B and As, respectively, from Co film. It was found out that B and As were severely lost by the evaporation during high temperature annealing Therefore SiO$_2$ capping layers were introduced to prevent the evaporation of the implanted dopants from the films. Investigation of the behavior of dopants with respect to annealing time revealed that increasing the annealing time enhanced the diffusion of dopants into Si from CoSi$_2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• 한국정밀공학회지
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• 제13권2호
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• pp.159-167
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• 1996

The effect of atmospheric gas on the surface cleanliness in the batch annealing furnace(BAF) is presented. It is very important to improve the surface cleanliness to investigate the surface defects such as carbon contamination, smudge and yellow color phenomenon on the surface of steel sheet. In order to study the occurrence of surface defects of steel sheet, the annealing operations were carried out in the H2 BAF with 75% hydrogen and conventional BAF with 4% hydrogen. The hydrogen is important factor that affect the energy saving in the entire annealing cycle and the surface cleanliness. In the conventional BAF, it shows that to protect the yellow color phenomenon the proper finish temperature is $80^{\circ}C$ and in the smudge sample the oxidized thickness has the depth of $120{\AA}$.

• Steel and Composite Structures
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• 제7권3호
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• pp.201-217
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• 2007

Two combinatorial optimization algorithms, tabu search and simulated annealing, are presented for the minimum-weight design of geometrically non-linear steel plane frames. The design algorithms obtain minimum weight frames by selecting suitable sections from a standard set of steel sections such as American Institute of Steel Construction (AISC) wide-flange (W) shapes. Stress constraints of AISC Load and Resistance Factor Design (LRFD) specification, maximum and interstorey drift constraints and size constraints for columns were imposed on frames. The stress constraints of AISC Allowable Stress Design (ASD) were also mounted in the two algorithms. The comparisons between AISC-LRFD and AISC-ASD specifications were also made while tabu search and simulated annealing were used separately. The algorithms were applied to the optimum design of three frame structures. The designs obtained using tabu search were compared to those where simulated annealing was considered. The comparisons showed that the tabu search algorithm yielded better designs with AISC-LRFD code specification.

• International Journal of CAD/CAM
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• 제12권1호
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• pp.9-19
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• 2012

Generation of optimum planar B-spline curve in terms of minimum deviation and required fairness to approximate a target shape defined by a strip-shaped unorganized 2D point cloud is studied. It is proposed to use the location of control points as variables within the geometric optimization framework of point distance minimization. An adaptive simulated annealing heuristic optimization algorithm is developed to iteratively update an initial approximate curve towards the target shape. The new implementation comprises an adaptive cooling procedure in which the temperature change is adaptively dependent on the objective function evolution. It is shown that the proposed method results in an improved convergence speed when compared to the standard simulated annealing method. A couple of examples are included to show the applicability of the proposed method in the surface model reconstruction directly from point cloud data.

• 전자공학회논문지D
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• 제35D권7호
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• pp.94-101
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• 1998

To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

• Journal of Magnetics
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• 제20권3호
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• pp.207-210
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• 2015

Modifications in the structural and magnetic properties of co-precipitated cobalt ferrite nanoparticles can be accomplished by varying the annealing time periods during the synthetic process. Experimental results show that high-purity cobalt ferrite nanoparticles are obtained using a co-precipitation process. The dependence of the crystallite sizes on the annealing time was successfully demonstrated using XRD and SEM. Finally, vibrating sample magnetometer analyses show that the magnetic properties of the cobalt ferrite nanoparticles depend on their relative particle sizes.

• 열처리공학회지
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• 제23권6호
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• pp.331-337
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• 2010

Aluminum nitride (AlN) thin films containing various amounts of Co content have been deposited by using a two-facing targets type sputtering (TFTS) system. The deposited films were also annealed successively and isothermally at different temperatures. Annealing treatment can control the physical properties as well as the microstructure of AlN films with Co particles. High magnetization and high resistivity are obtainable in AlN films containing dispersed Co particles. The coercivity of the films does not depend on annealing time, but it increases with increasing annealing temperature due to the increase of the grain size. A high saturation magnetization of 46 kG and resistivity of 2200 ${\mu}{\Omega}$-cm was obtained for AlN films containing 25 at% Co.

• 한국정밀공학회지
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• 제23권4호
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• pp.109-115
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• 2006

This paper is designed to estimate friction and powdering characteristic of coating layer on galvannealed sheet steel with different annealing temperature, which is 465, 505, 515 and $540^{\circ}C$, Estimations of powdering and friction were done using a $60^{\circ}$ bending test and one side friction test, respectively. In order to obviously understand the effect of coatings on friction cross-section of coatings before and after friction test was also observed by SEM. The results show that powdering of coatings is increased with increasing of annealing temperature and that friction characteristic greatly depends on powdering which leads to increase of real contact area between tools and coatings.

• 대한전자공학회논문지
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• 제25권3호
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.