• Current Photovoltaic Research
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• v.1 no.2
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• pp.97-102
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• 2013

Aluminum-doped zinc oxide (AZO) thin films were prepared by dc magnetron sputtering at room temperature and the effect of heat treatment on the structural, electrical and optical properties of the films were examined. As the annealing temperature and time increased, the resistivity decreased and the transmittance improved. All AZO films had c-axis oriented (002) plane of ZnO, regardless of the annealing process employed. As the annealing temperature and time increased, the crystallinity of AZO thin films increased due to the formation of a new ZnO phase in which Al was substituted for Zn. However, at the high annealing temperature of $400^{\circ}C$, the resistivity of the films increased via separation of Zn and Al from ZnO phase due to their low melting points. X-ray diffraction, field emission scanning electron micrograph and Hall effect measurement confirmed the formation of uniformly distributed new grains of ZnO substituted with Al. The variation of Al contents in AZO films was shown to be the primary factor for the changes in resistivity and carrier concentration of the films.

• Progress in Superconductivity
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• v.1 no.1
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• pp.9-13
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• 1999

The influence of quenching temperature and annealing time on superconducting characteristics has been investigated for a $(Pb_{0.6}V_{0.4})Sr_2(Ca_{0.65}Er_{0.35})Cu_2O_z$ compound. From the resistivity measurements for samples annealed at $400^{\circ}C$ to $860^{\circ}C$ in oxygen and subsequently quenched, it is observed that $T_c$(zero) of the sample decreases with the increase of annealing temperature up to $600^{\circ}C$ and increases again beyond $700^{\circ}C$. Annealings of the sample at $860^{\circ}C$ show that $T_c$(zero) goes through a maximum of 62K with the increase of the annealing time. It is also found that $T_c$(zero) of the sample quenched from high temperature decreases when the sample is subjected to low temperature annealing below. $600^{\circ}C$ in oxygen. The experimental results indicate that the as-prepared samples contain excessive oxygen and removal of this excessive oxygen in as-prepared samples is a key factor in controlling the superconducting properties of the samples and are discussed in connection with thermal gravimetric measurements.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.159-164
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• 2005

Indium tin oxide (ITO) films were deposited on a glass slide at a thickness of 280 nm by radio frequency(rf) magnetron sputtering from a ceramic target composed of $In_2O_3\;(90\%)\;+\;SnO_2\;(10\%)$. We investigated the effects of the annealing temperature (Ta) between 200 and 350'E for 30 min in air on such properties as thermal stability, surface morphology, and crystal structure of the films. X-ray diffraction spectra revealed that all the films were oriented preferably with [222] direction and [440] direction and the peak intensity increased with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) showed that the sodium was out-diffused from the glass substrate at the annealing temperature of $350^{\circ}C$. The sodium composition of the ITO film amlealed at $350^{\circ}C\;for\;30\;min\;was\;2.5\%$ at the surface. Also the sodium peak almost disappeared after 3 keV $Ar^+$sputtering for 6 min. The visible transmittance of all ITO films was over $77\%$.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.398-403
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• 2003

Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.4
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• pp.246-254
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• 1997

The 6.5wt %Si-Fe alloy sheets were made by the twin roll process. The magnetic properties and microstructures of sheets annealed in the sulfur atmosphere were studied. In the as-prepared sheet, non-oriented columnar grains about $10{\mu}m$ in diameter were observed, which grew from the surface to the inner part of the sheet. When the annealing temperature was around $700^{\circ}C$, the primary recrystallization was formed around the middle part of the sheet thickness, and the grain size increased with increasing annealing temperature. At the annealing temperature of $900^{\circ}C$, the grain size became $30{\sim}40{\mu}m$. Around the annealing temperature, the motive force of the grain growth is the grain boundary energy. However, above $1000^{\circ}C$ the surface energy played an important role in the observed grain growth. When the sheet were annealed at $1200^{\circ}C$, the grains whose (100) planes were paralled to the thin plate surface grew, and all sheet surfaces were covered with these grains after 1 hour annealing. This phenomenon is called tertiary recrystallization. A difference in surface energy between (100) and (110) surfaces provides a driving force for growth of tertiary grains. The coercive force was 0.27 mOe and the AC core loss $W_{12/50}$ was 0.38w/kg for the 6.5wt%Si-Fe alloy.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.5
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• pp.251-261
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• 2011

The changes in microstructure and texture during annealing were examined in a series of 0.015% C-1.5% Mn cold-rolled sheet steels with 0~0.5% Mo. Orientation distribution function data were calculated from the (110), (200), (211) pole figures determined on the rolled plane of cold-rolled and annealed steel sheets. Regardless of Mo content and annealing conditions, martensite volume fraction was less than 1.0%, not affecting the texture evolution. Textural change at the cooling stage after heating at $820^{\circ}C$ for 67 sec was not observed. Increasing the Mo content and annealing temperature markedly strengthened the intensities of ${\gamma}$-fiber texture, resulting in the increase in $r_m$ value. The desirable texture evolution for deep drawability in the 0.5% Mo steel may be mainly caused by the grain refining effect of Mo carbide in the hot-rolled steel sheet.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.769-774
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• 2006

In this paper the ZnO thin films, which has used spotlight of next generation short wavelength LEDs and semiconductor laser were deposited based on RF magnetron sputtering is described. The temperature at substrate and work pressure, which has implemented in sputtering process of ZnO thin films were settle down at $100^{\circ}C$ and 15 mTorr respectively. The ZnO 5N has used target. The thickness of ZnO thin films was about $1.6{\mu}m$ which was measured by SEM analysis after the sputtering process. Structural properties of ZnO thin films by in-situ and atmosphere annealing were analyzed by XRD. Transformation of grain size and surface roughness were observed by AFM. XPS spectra showed that ZnO thin film had a peak positions corresponding to the $Zn_{2p}$ and the $O_{1s}$. As form above XPS, we confirmed that post-annealing condition changed the atom ratio of Zn/O and microstructure in ZnO thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.701-706
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• 2006

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the structural variation of the DLC films. The films were annealed at temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film and interface between film and substrate were observed by surface profiler, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), respectively. Raman and X-ray photoelectron spectroscopy (XPS) analysis showed that DLC films were graphitized ($I_D/I_G$, G-peak position and $sp^2/sp^3$ increased) ratio at higher annealing temperature. The variation of surface as a function of annealing treatment was verified by a AFM and contact angle method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.152-155
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• 2007

In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{\circ}C$. The resistivity was $1.5{\times}10^{11}\;{\Omega}{\cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{\circ}C$ to -29.8 at $500^{\circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.194-198
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• 2012

In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) ${\rightarrow}$ 2268, 2164 (due to In-OH stretching mode) ${\rightarrow}$ 1546 (due to overtones of Sn-O-Sn modes) ${\rightarrow}$ 1412 (due to overtones of Sn-O-Sn modes) $cm^{-1}$.