Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of the Structural Properties for ZnO/Sapphire(0001) Thin Films by In-situ Atmosphere Annealing

In-situ 분위기 Annealing에 따른 ZnO/Sapphire(0001) 박막의 구조적 특성 분석

  • 왕민성 (원광대학교 전기전자 및 정보공학부) ;
  • 유인성 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2006.08.01
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Abstract

In this paper the ZnO thin films, which has used spotlight of next generation short wavelength LEDs and semiconductor laser were deposited based on RF magnetron sputtering is described. The temperature at substrate and work pressure, which has implemented in sputtering process of ZnO thin films were settle down at $100^{\circ}C$ and 15 mTorr respectively. The ZnO 5N has used target. The thickness of ZnO thin films was about $1.6{\mu}m$ which was measured by SEM analysis after the sputtering process. Structural properties of ZnO thin films by in-situ and atmosphere annealing were analyzed by XRD. Transformation of grain size and surface roughness were observed by AFM. XPS spectra showed that ZnO thin film had a peak positions corresponding to the $Zn_{2p}$ and the $O_{1s}$. As form above XPS, we confirmed that post-annealing condition changed the atom ratio of Zn/O and microstructure in ZnO thin films.

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References

  1. D. C. Reynolds, D. C. Look, B. Jogai, and H. Morkoc, 'Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN', Solid State Commu., Vol. 101, No.9, p. 643, 1997 https://doi.org/10.1016/S0038-1098(96)00697-7
  2. S. L. King, J. G. E. Gardeniers, and I. W. Boyd, 'Pulsed-laser deposited ZnO for device applications', Appl. Surface. Sci., Vol. 96-98, No.2, p. 811, 1996
  3. 김재홍, 이 천, '사파이어 기판 위에 증착된 ZnO 박막의 기판온도와 산소 가스량에 따른 특성', 전기전자재료학회논문지, 18권, 7호, p. 652, 2005
  4. 배상혁, 윤일구, 서대식, 명재민, 이상렬, 'PLD 증착 변수에 따른 II-Ⅵ족 화합물 ZnO 반도체 박막의 발광 특성 연구', 전기전자재료학회논문지, 14권, 3호, p. 246, 2001
  5. 유인성, 소순진, 박춘배, '기판의 결정구조에 따른 RF 스퍼터링 ZnO 박막의 성장과 미세 구조 분석', 전기전자재료학회논문지, 19권, 5호, p. 461, 2006 https://doi.org/10.4313/JKEM.2006.19.5.461
  6. S.-J. So and C.-B. Park, 'Diffusion of phosphorus and arsenic using ampoule-tube method on undoped ZnO thin films and optical properties of Pr type ZnO thin films', J. Cryst. Growth, Vol. 285, No.4, p. 606, 2005 https://doi.org/10.1016/j.jcrysgro.2005.09.018
  7. W. Xu, Z. Ye, T. Zhou, B. Zhao, L. Zhu, and J. Huang, 'Low-pressure MOCVD growth of p-type ZnO thin films by using NO as the dopant source', J. Cryst. Growth, Vol. 265, No.1, p. 133, 2004 https://doi.org/10.1016/j.jcrysgro.2003.12.061
  8. Y. R. Ryu, W. J. Kim, and H. W. White, 'Fabrication of homo structural ZnO p-n junctions', J. Cryst. Growth, Vol. 219, No. 4, p. 419, 2000 https://doi.org/10.1016/S0022-0248(00)00731-4
  9. 소순진, 왕민성, 박춘배, 'Undoped ZnO 박막 에 ampoule-tube 방법을 이용한 P와As의 확산과 p형 ZnO 박막의 전기적 특성', 전기전자재료학휘논문지. 18권, 11호, p. 1043. 2005
  10. X. L. Guo, H. Tabata, and T. Kawai, 'Pulse laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source', J. Cryst. Growth, Vol. 223, No.1, p. 135, 2001 https://doi.org/10.1016/S0022-0248(00)00952-0
  11. J. Y. Huang, Z. Z. Ye, H. H. Chen, B. H. Zhao, and L. Wang, 'Growth of N-doped p-type ZnO films using ammonia as dopant source gas', J. Mater. Sci. Lett., Vol. 22, p. 249, 2003 https://doi.org/10.1023/A:1022347910122
  12. K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, 'Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant', J. Appl. Phys., Vol. 83, No.1, p. 63, 2003
  13. 이주영, 김홍승, 정은수, 장낙원, '열처리한 ZnO 박막 내의 산소 농도 변화에 따른 구조적, 광학적 특성 연구', 전기전자재료학회논문지, 18권, 7호, p. 600, 2005