Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of Li2CO3-doped Thin Film Bulk Acoustic Resonator and Structural, Electrical Properties as a Function of Annealing Temperatures

Li2CO3:ZnO를 이용하여 제조한 FBAR의 제작 및 열처리에 따른 구조적, 전기적 특성

  • 김봉석 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 김응권 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 이태용 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 오수영 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 송준태 (성균관대학교 정보통신공학과 전자소자응용연구실)
  • Published : 2007.02.01
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Abstract

In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{\circ}C$. The resistivity was $1.5{\times}10^{11}\;{\Omega}{\cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{\circ}C$ to -29.8 at $500^{\circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.

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References

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