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Fabrication of Li2CO3-doped Thin Film Bulk Acoustic Resonator and Structural, Electrical Properties as a Function of Annealing Temperatures

Li2CO3:ZnO를 이용하여 제조한 FBAR의 제작 및 열처리에 따른 구조적, 전기적 특성

  • 김봉석 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 김응권 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 이태용 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 오수영 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 송준태 (성균관대학교 정보통신공학과 전자소자응용연구실)
  • Published : 2007.02.01

Abstract

In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{\circ}C$. The resistivity was $1.5{\times}10^{11}\;{\Omega}{\cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{\circ}C$ to -29.8 at $500^{\circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.

Keywords

References

  1. E. K. Kim, T. Y. Lee, H. S. Hwang, Y. S. Kim, Y. Park, and J. T. Song, 'Improvement of the crystallinity of ZnO thin films and frequency characteristics of a film bulk acoustic wave resonator by using an Ru buffer layer and annealing treatment', Superlattice Microst., Vol. 39, No. 1-4, p. 138, 2006 https://doi.org/10.1016/j.spmi.2005.08.066
  2. 나영일, 이재형, 임동건, 양계준, '태양전지 응용을 위한 PC 기판 상의 ZnO:Al 박막 특성에 관한 연구', 전기전자재료학회논문지, 15권, 2호, p. 116, 2005
  3. J. Liu, W. Weng, W. Ding, K. Cheng, P. Du, G. Shen, and G. Han, 'Sol - gel derived (Li, Mg): ZnO films with high c-axis orientation and electrical resistivity', Surf Coat Tech., Vol. 198, No. 1-3, p. 274, 2005 https://doi.org/10.1016/j.surfcoat.2004.10.081
  4. W. Water, S.-Y. Chu, Y.-D. Juang, and S.-J. Wu, '$Li_{2}CO_{3}$-doped ZnO films prepared by RF magnetron sputtering technique for acoustic device application', Materials Letters, Vol. 57, p. 998, 2002 https://doi.org/10.1016/S0167-577X(02)00913-8
  5. 신영화, 권상직, 김형준, 'FBAR 소자제작을 위한 ZnO 박막 증착 및 특성', 전기전자재료학회논문지, 18권, 2호, p. 159, 2005
  6. M. K. Puchert, P. Y. Timbrell, and R. N. Lamb, 'Postdeposition annealing of radio frequency magnetron sputtered ZnO films', Vac. Sci. Technol., Vol. 14, No.4, p. 2220, 1996 https://doi.org/10.1116/1.580050
  7. M. Chen, Z. L. Pei, X. Wang, C. Sun, and L. S. Wen, 'Structural, electrical, and optical properties of transparent conductive oxide ZnO:AI films prepared by de magnetron reactive sputtering', J. Vac. Sci. Technol., Vol. 19, No.3, p. 963, 2001 https://doi.org/10.1116/1.1368836
  8. B. D. Cullity and S. R. Stock, 'Elements of x-ray diffraction', Prentice Hall, 2001
  9. L. Mai, H.-I. Song, L. M. Tuan, P. V. Su, and G. Yoon, 'A comprehensive of thermal treatment effects on resonance characteristics in FBAR devices', Microwave and optical technology letters, Vol. 47, No.5, p. 459, 2005 https://doi.org/10.1002/mop.21199