• Journal of the Korean Society for Heat Treatment
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• v.26 no.2
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• pp.72-79
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• 2013

The effects of homogenization, hot-forging, and annealing condition on microstructure and hardness of a modified STD61 hot-work tool steel were investigated. The ingot specimen had a dendritic structure consisting of bainite and martensite. Spherical VC particles of approximately 50 nm and cuboidal (V,Ti)C particles of about 100 nm were observed in the ingot specimen. After homogenization, the dendritic structure was blurred, and the difference in hardness between martensite and bainite became narrow, resulting in the more homogeneous microstructure. Needle-shaped non-equilibrium $(Fe,Cr)_3C$ particles were additionally observed in the homogenized specimen. The hot-forged specimen had bainite single phase with spherical VC, cuboidal (V,Ti)C, and needle-shaped $(Fe,Cr)_3C$ particles. After annealing at $860^{\circ}C$, the microstructures of specimens were ferrite single phase with various carbides such as VC, $(Fe,Cr)_7C_3$, and $(Fe,Cr)_{23}C_6$ because of relatively slow cooling rates. The size of carbides in annealed specimens decreased with increasing cooling rate, resulting in the increase of hardness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.203-203
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• 2009

Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.552-555
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• 2008

The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

• Journal of Powder Materials
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• v.5 no.4
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• pp.329-333
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• 1998

Copper-10 wt. % tungsten alloyed powder was obtained by co-reduction of mixed tungsten-trioxide and copper oxide powders at 973 K for 7.2 Ks. In the alloy obtained by pressure-assisted sintering of this co-reduced powder, ultra fine tungsten particles (about 100nm) were dispersed uniformly in the copper matrix. At room temperature, the hardness of this alloy was Hv151 and the electrical conductivity was 85% IACS. After annealing at 1173 K for 3.6 Ks, the hardness and electrical conductivity were Hv147 and 84% IACS, respectively, and were same as before annealing. It was confirmed that the hardness and electrical conductivity of this alloy were hardly influenced by annealing condition since the microstructure of this alloy is highly stabilized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.459-466
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• 2000

For the applications in the ultra-large-scale-integration (ULSI) metallization processing copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on TiN/Si substrates. The films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were then annealed in a vacuum condition after the deposition and the annealing effect to the electrical conductivity of the films was measured. The grain size and the crystallinity of the films were observed to be increased by the post annealing and the electrical conductivity was also increased. The best electrical property of the copper film was obtained by in-situ annealing treatment at above 40$0^{\circ}C$ for the sample prepared at 18$0^{\circ}C$ of the substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.49-51
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• 1989

The effect of Mo elenent and annealing condition on the magnetic properties were investigated in Fe$_{80}$B$_{12}$Si$_{8}$ amorphous alloy. With increasing Mo contents, soft magnetic properties were improved by decreasing coercive force and increasing maximum permeability. These improvements were attributed to the decreasing of magnetostriction by Mo addition. The annealing treatment also improved the soft magnetic properties of (Fe$_{1-x}$ Mo$_{x}$)$_{80}$ B$_{12}$ Si$_{8}$ amorphous alloys. It could be thought that these improvements were ascribed to the relaxation of internal stress.nal stress.ess.

• 한국지구물리탐사학회:학술대회논문집
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• 2003.11a
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• pp.518-521
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• 2003

LCA (Life Cycle Assessment), that unifies the scale of various environmental impacts, and simulated annealing are applied to optimizing electrolysis of wastewater from PCB (Printed Circuit Board) production. The changes of environmental impact can be quantified with LCA and the total changes of environmental impacts can be expressed as a function of power consumed, Cu recycled, $Cl_2$, NOx and SOx discharged through restriction of feasible reactions. In a single-variate condition, the environmental optimum can be easily obtained through plotting and comparing each environmental impact value. In 8V potentiostatic electrolysis, the lowest environmental impact can be achieved after 90min. To optimize a multi-variate conditional system, simulated annealing can be applied and this can give the quick and near optimum in complex systems, where many input and output materials are involved, through experimentally measured values without a theoretical modeling.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.416-418
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• 2000

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.63-69
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• 1999

The electrical properties of rf-magnetron sputtered $Ba_{0.5}Sr_{0.3}TiO_3$ (BST) capacitors were investigated by varying annealing temperature and atmosphere of the rapid thermal annealing (RTA). The electrical properties of Pt/BST/Pt capacitors were found to strongly depend on the RTA condition. It seems that the dependence of the electrical properties of the Pt/BST/Pt capacitors on the RTA condition is related to the oxygen vacancies in BST thin films. In order to clarify the relation between the oxygen vacancies and the electrical properties of Pt/BST/Pt capacitors, we have examined the two different annealing methods. One annealing method was performed in $O_2$ gas and the other was done in $O_2$-plasma at the same condition of 450$^{\circ}C$, 20 mtorr. It was found that the leakage current densities of $O_2$-plasma annealed capacitor were much lower than those of $O_2$ annealed capacitor. The dielectric constants of $O_2$ annealed capacitor decreased about 14% comparing with those of as-deposited. In contrast, there was no decrease in the dielectric constant of $O_2$-plasma annealed. These results indicate that $O_2$-plasma annealing is very effective in compensation the oxygen vacancies in BST thin films. It can be also concluded that the oxygen vacancies greatly affect the electrical properties of Pt/BST/Pt capacitors.

• Korean Journal of Plant Resources
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• v.14 no.1
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• pp.65-70
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• 2001

This study was performed to select marker which can identify genetic variation between mother plant and in vitro cultured plantlets of strawberry by PCR using random primer. When 'Yeobong' DNA extracted was treated with proteinase-K and RNase-H, clear DNA bands were shown. The optimal condition for RAPD in strawberry was to use 50ng of template DNA, 10pmol of primer,37oC of annealing temperature, and 45 cycles of PCR. After establishing above PCR optimal condition, RAPD pattern was investigated by using UBC primers. PCR was performed, and 46 of 90 primers produced PCR product showing 158 total bands. GC content was compared between the primers forming bands and no bands. The GC content showing bands was average 67.4%, whereas primers showing no bands 58%.