• Title/Summary/Keyword: amorphous materials

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Selective Adsorption of Sulfur Compounds from Natural Gas Fuel Using Nanoporous Molecular Sieves (나노세공 분자체를 이용한 천연가스 연료로부터 황 화합물의 선택적 흡착)

  • Kim, Hoon-Sung;Chung, Jong-Kook;Lee, Seok-Hee;Cheon, Jae-Kee;Moon, Myung-Joon;Woo, Hee-Chul
    • Clean Technology
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    • v.13 no.1 s.36
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    • pp.64-71
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    • 2007
  • The selection of a suitable adsorbent for removing organic sulfur compounds tetrahydrothiophene (THT) and t-butylmercaptan (TBM) from natural gas has been carried out. The saturation adsorption capacity for the sulfur compounds were determined by pulse adsorption method for a group of nanoporous materials, including Na-Y, Na-ZSM-5, Na,K-ET(A)S-10, Na-Mordenite, Na,K-Clinoptitolite, Ti/MCM-41, Ti/SBA-15 and amorphous titanosilicates. Among the materials tested, Na-Y and Na,K-ET(A)S-10 zeolites showed high adsorptive capacities for THT and TBM. The saturation capacity for THT on Na,K-ETS-10 was comparable with that on Na-Y zeolite, which is well known as an effective adsorbent. The capacity and adsorptivity for THT and TBM on Na,K-ETAS-10 were improved by an increase in crystallinity of Na,K-ETAS-10. An investigation of the competitive adsorption between THT and TBM from the breakthrough test using a simulated natural gas indicates that Na,K-ETS-10 selectively adsorbs THT. The breakthrough capacity for THT on Na,K-ETS-10 was 1.19 mmol/g. The results show that the high adsorption performance of Na.K-ETS-10 and Na,K-ETAS-10 is due to the highly exchanged cations in the zeolitic structure which exhibit the strong electrostatic interactions with organic sulfur compounds and their wide pore nature.

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Fabrication and Analysis of Thin Film Supercapacitor using a Cobalt Oxide Thin Film Electrode (코발트 산화물 박막을 이용한 박막형 슈퍼 캐패시터의 제작 및 특성평가)

  • Kim, Han-Gi;Im, Jae-Hong;Jeon, Eun-Jeong;Seong, Tae-Yeon;Jo, Won-Il;Yun, Yeong-Su
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.339-344
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    • 2001
  • An all solid-state thin film supercapacitor (TFSC) with Co$_3$O$_4$/LiPON/Co$_3$O$_4$ structure was fabricated on Pt/Ti/Si substrate using Co$_3$O$_4$ thin film electrode. Each Co$_3$O$_4$ film was grown by reactive dc reactive magnetron sputtering with increasing $O_2$/[Ar+O$_2$] ratio. Amorphous LiPON electrolyte film was deposited on Co$_3$O$_4$/Pt/Ti/Si in pure nitrogen ambient by using reactive rf magnetron sputtering. The electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ multi-layer structures exhibits a behavior of a bulk-type supercapacitor, even though much lower capacity (from 5 to 25 mF/$\textrm{cm}^2$-$\mu\textrm{m}$) than that of the bulk one. It was found that the TFSC showed a fairly constant discharge capacity with a constant current of 50 $\mu\textrm{A}/\textrm{cm}^2$ at the cut-off voltage 0-2V during 400 cycles. It is shown that the electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ TFSC is dependent upon the sputtering gas ratio. The capacity dependency of electrode films on different gas ratios was explained by different structural, electrical, and surfacical properties.

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A Study on Electrical Properties of $Ta_2O_{5-x}$ Thin-films Obtained by $O_2$ RTA ($O_2$RTA 방법으로 제조된 $Ta_2O_{5-x}$ 박막의 전기적 특성)

  • Kim, In-Seong;Song, Jae-Seong;Yun, Mun-Su;Park, Jeong-Hu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.8
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    • pp.340-346
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    • 2002
  • Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.

New Analysis Approach to the Characteristics of Excimer Laser Annealed Polycrystalline Si Thin Film by use of the Angle wrapping (엑시며 레이저에 의해 형성된 다결정 실리콘 박막의 Angle wrapping에 의한 깊이에 따른 특성변화)

  • Lee, Chang-U;Go, Seok-Jung
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.884-889
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    • 1998
  • Amorphous silicon films of large area have been crystallized by a line shape excimer laser beam of one dimensional scanning with a gaussian profile in the scanning direction. In order to characterize the crystalline phase transition of thickness variables in excimer laser annealing(ELA), angle wrapping method was used. And also to characterize the residual stresses of crystalline phase transition in the case of angle wrapped-crystalline silicon on corning 7059 glass, polarized raman spectroscopies were measured at various laser energy density and substrate temperature. The residual stress varies from $9.0{\times}10^9$ to $9.9{\times}10^9$, and from $9.9{\times}10^9$ to $1.2{\times}10^10$dyne/${cm}^2$ of the substrate temperature at room temperature and varies from $8.1{\times}10^9$ to $9.0{\times}10^9$, and from $9.0{\times}10^9$ to $9.9{\times}10^9$dyne/${cm}^2$ of the substrate temperature at $400^{\circ}C$ as a function of direction from surface to substrate. According to the direction from the surface in liquid phase to the interface and from the interface to near the substrate in solid phase of recrystallized Si thin film, respectively. Thus, the stress is increased from(Liquid phase to solid phase) with phase transition.

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Thermal Stability of Ti-Si-N as a Diffusion Barrier (Cu와 Si간의 확산방지막으로서의 Ti-Si-N에 관한 연구)

  • O, Jun-Hwan;Lee, Jong-Mu
    • Korean Journal of Materials Research
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    • v.11 no.3
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    • pp.215-220
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    • 2001
  • Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

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A Study on the Effects Plastics have on the Product Designs through the Development of Plastic Materials - On & Around the Streamline favored by the Generation 1920-30'th - (플라스틱의 개발이 제품 디자인에 미친 영향에 관한 연구 - 1920-30년대 유선형을 중심으로 -)

  • Lee, Ok-Bun
    • Archives of design research
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    • v.19 no.2 s.64
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    • pp.283-292
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    • 2006
  • The Plastic material had been developed in the middle of the 19th century as an alternative material. Along with the development of the electrical engineering industry, it cropped up into center stage as an effective material and has increasingly expanded its use. As such, the plastic material has bound deep-seated ties with the design activities of industrial products, coming into the main material for a variety of industrial designs. Despite its dose affinity to design function in terms of its materialistic property, we have rarely seen examples of intensive study on the realtionship between plastics and designs. This study aims to find the importance that the substance affects industrial products in designs along with the development of plastic materials. With the objective in mind, we made a review of the streamline stylishness that had flourished in the twenties and thirties of the 19th century. Through this study, we understand that the plastic material has a close realtionshop with design activities in three different aspects. First, its amorphous state of nature makes it possible to change into any shape one desires in plastic surgery, which feature in turn influences the moulding of any design forms. Second, the plastic material is best suited to mass-manufacture, which induces to reduce the cost of production. Hence, the expansion of design industry. Third, the plastic material allows the multiple variety of colors, sensitivity, gloss and patterns and infinitely large possibility ranging from natural senses to human senses with the result that numberless diversity of designs cdould come into being.

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T$a_2O_5$Dielectric Thin Films by Thermal Oxidation and PECVD (열산화법 및 PECVD 법에 의한 T$a_2O_5$ 유전 박막)

  • Mun, Hwan-Seong;Lee, Jae-Seok;Lee, Jae-Seok;Lee, Jae-Seok;Yang, Seung-Gi;Lee, Jae-hak;Park, Hyung-ho;Park, Jong-wan
    • Korean Journal of Materials Research
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    • v.2 no.5
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    • pp.353-359
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    • 1992
  • Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.

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Characterization of Materials and Color Formation for Black Potteries from the Proto-Three Kingdoms Period in Ulsan, Korea (울산지역 원삼국시대 흑색토기의 재질 및 발색 특성)

  • Kim, Su Kyoung;Jang, Sungyoon;Lee, Chan Hee
    • Journal of Conservation Science
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    • v.37 no.2
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    • pp.77-89
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    • 2021
  • In this study, materials and color formation techniques were assessed for black potteries excavated from the Janghyeon-dong, Jungsan-dong and Gyodong-ri sites during the Proto-Three Kingdoms period in Ulsan, Korea. Although the black potteries were black superficially, the inner cores were either black or reddish yellow. Microscopy analysis identified that body clay was used for reddish iron oxide rich soils with quartz, alkali feldspar and mica, along with grains of myrmechite texture. Additionally, as marginal differences exist in the contents of SiO2, Fe2O3 and CaO, the composition of the host rock and clay distributed around the sites was affected. Thus, we can deduce that pottery was made by soiling at a short distance. Raman spectroscopy results revealed that the black layer of the black pottery was used as amorphous combustion carbon. In addition, as a transparent layer of brown lacquer was observed on the substrate that was in contact with the surface layer, the black layer of the pottery induced black color development by a combination of combustion carbon and lacquer. Based on the mineral composition and microtexture of the body clay, the firing temperature of the potteries seemed to range from 750 to 850℃, whereas the lacquer layer was pyrolyzed at 468℃ by thermal analysis. Therefore, a combined layer of combustion carbon and lacquer, which formed the black color, was painted after the body clay was fired.

Ball-milling Induced Changes in the Crystallinity of Quartz and Wear of Milling Media (볼 밀링에 의한 석영의 결정도 변화와 밀링 매체의 마모의 영향)

  • Jin Jung Kweon;Hoon Khim;Sung Keun Lee
    • Korean Journal of Mineralogy and Petrology
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    • v.36 no.2
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    • pp.95-106
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    • 2023
  • Quartz (SiO2) is among the major rock-forming minerals in the earth's crust. The atomistic structures of SiO2 may evolve during diverse frictional processes. The reduction of friction of quartz-rock accompanied by its amorphization, hydration, and formation of silica gel provides mineralogical insights into earthquakes and related phenomena. Ball milling, together with rotary shear experiments have been useful to infer the atomic origins of such processes. In this study, optimal experimental conditions for ball milling for amorphization of SiO2 were determined by taking into account various process variables. The crystallinity of SiO2 gradually decreased and became amorphous as the ball milling time increased at a high milling speed. The degree of wear of the milling media and its effect on the amorphization of SiO2 were analyzed using distinct milling materials (zirconia, stainless steel). The amount of ball wear increased with increasing milling time. Furthermore, the worn stainless steel particles from balls tend to interact with amorphized SiO2 to form Si-O-Cr. These results aid in understanding the process of atomistic structural changes caused by ball milling of divserse materials with relatively high hardness, such as SiO2, and understanding various geological friction processes.

Synthesis of Core@Shell-Structured Silicon@Carbon Nanoparticles by One-Pot Spray Pyrolysis Process and Application as Anode Materials for Lithium-Ion Batteries (단일 분무 열분해 공정을 이용한 코어@쉘 구조의 Si@C 나노 분말 합성 및 리튬 이온 전지 음극소재 적용)

  • Seong Ho Jung;Jae Seob Lee;Jung Sang Cho
    • Clean Technology
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    • v.30 no.3
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    • pp.220-227
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    • 2024
  • As the demand for lithium-ion batteries with high capacity and high energy density has rapidly increased, silicon anodes (theoretical capacity = 3,570 mA h g-1) have garnered attention as potential replacements for conventional graphite anodes (theoretical capacity = 372 mA h g-1). However, silicon anodes suffer from severe volume expansion (~360%) during lithiation, low ionic conductivity (10-14 ~ 10-13 cm2 S-1), and low electrical conductivity (10-2 S cm-1), resulting in poor cycling and rate performance. To address these issues, this study synthesized core@shell-structured silicon@carbon nanoparticles (Si@C NPs) via a one-pot spray pyrolysis process using Pluronic-F127. Pluronic-F127 in the spray solution contributes to the synthesis of nanoparticles by preventing the formation of silicon nanoparticle/dextrin agglomerates and by undergoing pyrolysis simultaneously. Additionally, dextrin derived amorphous carbon was coated on the surface of the silicon nanoparticles to act as an electron transport pathway within the anodes and enhance the electrical contact between the silicon nanoparticles. The Si@C NPs exhibited a discharge capacity of 1,912 mA h g-1 after 50 cycles at 1.0 A g-1 and high rate capabilities (discharge capacity of 1,493 mA h g-1 at 3.0 Ag-1). The silicon@carbon composite nanoparticle synthesis strategy based on the spray pyrolysis process presented in this study is expected to offer a new direction for improving the performance of silicon anode materials.