• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.423-426
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• 2001

Recently we have reported that the meander-patterned amorphous FeCoSiB films exhibit large change in their high frequency impedance by applying a strain, suggesting that the films are very attractive for making of a highly sensitive strain sensor elements. In this study, the effect of anisotropy on a change in the impedance of sputtered amorphous film patterns was investigated in the frequency range from 1MHz to 1GHz. As a function of applied strains, the high frequency impedance was extremely changed in the case of film patterns with transverse anisotropy due to excellent magnetomechanical coupling properties. As a summary, the maximum figure of merit f has measured about 2600 in the case of transverse anisotropy, and about 500 in the case of longitudinal anisotropy at 500 MHz. These values of F are approximately more than 1000 times higher than that of a conventional metal strain gauge (F 2) and more than 10 times higher than that of a semiconductor gauge (F 200).

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.88-89
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• 2003

During the past decade, giant magnetotransport phenomena such as giant magetoresistance (GMR) in thin films and in manganese perovskites, and, giant magnetoimpedance (GMI) in soft magnetic amorphous ribbons, have brought much interest in the basic physical understanding and their applications as magnetic recording heads and in magnetic sensors technology. Among the parameters required for the quality of a magnetic sensor, temperature dependences of GMR and GMI profiles are playing an important role. In the present work, we have studied temperature dependences of the longitudinal permeability and giant magnetoimpedance effect in $Co_{70}$F $e_{5}$S $i_{15}$ N $b_{2.2}$C $u_{0.8}$ $B_{7}$ amorphous ribbons expecting as a promising candidate in the domain of magnetic sensors.rs.rs.rs.s.

• Journal of Magnetics
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• v.1 no.1
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• pp.24-30
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• 1996

The relationship between effective permeability and the remanence ratio of an Fe-based amorphous alloy (Metglas 2605S3A) is investigated over a wide frequency range, in an effort to understand magnetization behavior of the alloy. In the frequency range from 1 to 200 kHz, the permeability is maximum at the remanence ratio of 0.4-0.5 and, at frequencies over 500 kHz, the correlation with negative coefficients emerges indicating that the permeability decreases with the remanent ratio, except for the ribbon coated with an insulating layer of MgO which exhibits both high values of the effective permeability and remanence ratio. It is considered from the correlation results that the boundary at which the dominant magnetization mechanism changes from domain wall motion to spin rotation is near 500 kHz. The core loss is also investigated as a function of annealing time when the samples are annealed at a fixed temperature of $435^{\circ}C$. The core loss in most cases decreases with the annealing time, the degree of the loss may consist of the hysteresis loss and anomalous eddy current loss. The two loss components are considered to be of similar magnitudes at low frequencies while, at high frequencies, the dominant contribution to the total loss is the anomalous loss.

• Journal of the Korean Magnetics Society
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• v.5 no.4
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• pp.251-260
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• 1995

It has been reported that Co-based amorphous ferromagnetic alloys annealed in a small magnetic field develop a reproducible, asymmetric hysteresis loop. If the direction of the field during annealing is regarded as +, the magnetization reversal from - to + is smooth and reversible, with its slope determined by the demagnetizing field of the sample. This phenomenon is called the asymmetric magnetization reversal (AMR). The shape of the hyster-esis loop depends sensitively on the condition during the anneal and the alloy composition. Here, we report on the effect of the annealing temperature and time on AMR in a zero magnetostrictive ferromagnetic amorphous alloy. The AMR effect develops in a very short time at a reasonably high temperature, but is stabilized by annealing for a prolonged time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.366-370
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• 2022

A 12 ㎛ pixel-sized 360 × 240 microbolometer focal plane array (MBFPA) was fabricated using a complementary metaloxide-semiconductor (CMOS)-compatible process. To release the MBFPA membrane, an amorphous carbon layer (ACL) processed at a low temperature (<400 ℃) was deposited as a sacrificial layer. The thermal time constant of the MBFPA was improved by using serpentine legs and controlling the thickness of the SiNx layers at 110, 130, and 150 nm on the membrane, with response times of 6.13, 6.28, and 7.48 msec, respectively. Boron-doped amorphous Si (a-Si), which exhibits a high-temperature coefficient of resistance (TCR) and CMOS compatibility, was deposited on top of the membrane as an IR absorption layer to provide heat energy transformation. The structural stability of the thin SiNx membrane and serpentine legs was observed using field-emission scanning electron microscopy (FE-SEM). The fabrication yield was evaluated by measuring the resistance of a representative pixel in the array, which was in the range of 0.8-1.2 Mohm (as designed). The yields for SiNx thicknesses of SiNx at 110, 130, and 150 nm were 75, 86, and 86%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.392.1-392.1
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• 2016

Nowadays, research interest in developing the wearable devices are growing remarkably. Portable consumer electronic systems are becoming lightweight, flexible and even wearable. In fact, wearable electronics require energy storage device with thin, foldable, stretchable and conformable properties. Accordingly, developing the flexible energy storage devices with desirable abilities has become the main focus of research area. Among various energy storage devices, supercapacitors have been considered as an attractive next generation energy storage device owing to their advantageous properties of high power density, rapid charge-discharge rate, long-cycle life and high safety. The energy being stored in pseudocapacitors is relatively higher compared to the electrochemical double-layer capacitors, which is due to the continuous redox reactions generated in the electrode materials of pseudocapacitors. Generally, transition metal oxides/hydroxide (such as $Co_3O_4$, $Ni(OH)_2$, $NiFe_2O_4$, $MnO_2$, $CoWO_4$, $NiWO_4$, etc.) with controlled nanostructures (NSs) are used as electrode materials to improve energy storage properties in pseudocapacitors. Therefore, different growth methods have been used to synthesize these NSs. Of various growth methods, electrochemical deposition is considered to be a simple and low-cost method to facilely integrate the various NSs on conductive electrodes. Herein, we synthesized amorphous $NiWO_4$ NSs on cost-effective conductive textiles by a facile electrochemical deposition. The as-grown amorphous $NiWO_4$ NSs served as a flexible and efficient electrode for energy storage applications.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.205-208
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• 2013

The width dependence of Delta E has been studied by impedance resonance method in Fe-rich amorphous ribbon of as received state. It can be explained by single domain model include effective magnetic field $H_{eff}$ and demagnetization factor $N_d$. Wider width ribbon's effective is smaller than narrow it. Young's modulus also smaller than narrow width. These result well agreement in calculation. It has been also studied that linear magnetic field sensor using width dependence of Delta E under the field range 0 Oe~80 Oe. The sensitivity of the sensor was found to be 95 Hz/Oe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.281-290
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• 2011

In order to gain better understanding of the selective surface oxidation and its influence on the galvanizability of a transformation-induced plasticity (TRIP) assisted steel containing 1.5 wt.% Si and 1.6 wt.% Mn, a model experiment has been carried out by depositing Si and Mn (each with a nominal thickness of 10 nm) in either monolayers or bilayers on a low-alloy interstitial-free (IF) steel sheet. After intercritical annealing at $800^{\circ}C$ in a $N_2$ ambient with a dew point of $-40^{\circ}C$, the surface scale formed on 590 MPa TRIP steel exhibited a microstructure similar to that of the scale formed on the Mn/Si bilayer-coated IF steel, consisting of $Mn_{2}SiO_{4}$ particles embedded in an amorphous $SiO_{2}$ film. The present study results indicated that, during the intercritical annealing process of 590 MPa TRIP steel, surface segregation of Si occurs first to form an amorphous $SiO_{2}$ film, which in turn accelerates the out-diffusion of Mn to form more stable Mn-Si oxide particles on the steel surface. During hot-dip galvanizing, particulate $Fe_{3}O_{4}$, MnO, and Si-Mn oxides were reduced more readily by Al in a Zn bath than the amorphous $SiO_{2}$ film. Therefore, in order to improve the galvanizability of 590 TRIP steel, it is most desirable to minimize the surface segregation of Si during the intercritical annealing process.