• Korean Journal of Materials Research
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• v.10 no.8
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• pp.575-580
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• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.5
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• pp.223-228
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• 2017

Aluminum nitride (AlN) powder was successfully synthesized at low temperature via carbothermal reduction and nitridation (CRN) assisted by microwave heating. The synthesis processes of AlN powder were investigated with X-ray diffraction, FE-SEM, FT-IR and TGA/DSC. Aluminum nitrate was used as an oxidizer and aluminum source, urea as fuel, and glucose as carbon source. These starting materials were mixed with D.I water and reacted in a flask at $100^{\circ}C$ for 20 minutes. After the reaction was finished, black foamy intermediate product was formed, which was considered to be an amorphous $Al_2O_3$ particles through intermediate product obtained by solution combustion synthesis (SCS) at the results of X-ray diffraction patterns and FT-IR. This intermediate product was nitridated at temperatures of $1300^{\circ}C$ and $1400^{\circ}C$ in $N_2$ atmosphere by a microwave heating furnace and then decarbonated at $600^{\circ}C$ for 2 hours in air. It should be noticed from FE-SEM images that as nitridated particles, identified as AlN from X-ray diffraction patterns, are covered with carbon residues. After decarbonating the nitridated powders, the spherical pure AlN powders were obtained without alumina and their particle sizes were dependent on the nitridating temperature with high temperature of $1400^{\circ}C$ giving large particles of around 70~100 nm.

• New & Renewable Energy
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• v.3 no.4
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• pp.63-68
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• 2007

유리를 기판으로 하는 superstrate pin 비정질 실리콘 태양전진에서 전면 투명전도막(TCO)과 p-층의 계면은 태양전지 변환효율에 큰 영향을 미친다. 면투명전도막(TCO)으로 현재 일반적으로 사용되는 ZnO:Al는 $SnO_2:F$보다 전기, 광학적으로 우수하고, 안개율 (Haze)높으며, 수소 플라즈마에서 안정성이 높은 특징을 갖고 있다. 그래서 박막 태양전지의 특성향상에 매우 유리하나, 태양전지로 제조했을 때, $SnO_2$보다 충진율(Fill Factor:F.F)과 $V_{oc}$가 감소한다는 단점을 가지고 있다. 본 실험실에서는 $SnO_2:F$dml F.F.가 72%이 나온 반면 ZnO:Al의 F.F은 68%에 그쳤다. 이들 원인을 분석하기 위해 TCO/p-layer의 전기적 특성을 알아 본 결과, $SnO_2:F$보다 ZnO:Al의 직렬저항이 높게 측정되었다. 이러한 결과를 바탕으로 p-layer에 $R=(H_2/SiH_4)=25$로 변화, p ${\mu}c$-Si:H/p a-SiC:H로 p-layer 이중 증착, p-layer의 boron doping 농도를 증가시키는 실험을 하였다. 직렬저항이 가장 낮았던 p ${\mu}c$-Si:H/p a-SiC:H 인 p-layer 이중 증착에서 $V_{oc}$는 0.95V F.F는 70%이상이 나왔다. 이들 각 p층의 $E_a$(Activiation Energy)를 구해본 결과, ${\mu}c$-Si:H의 Ea 가 가장 낮은 것을 관찰 할 수 있었다.

• Korean Journal of Environmental Agriculture
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• v.21 no.1
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• pp.17-23
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• 2002

In order to investigate effects if loess on the mycellial pellet formation a phosphate-solubilizing fungus. Aspergillus sp. PS-104 was cultured in potato dextrose broth containing loess. The strain formed an amorphous pellet or loose aggregates agitated at a low speed (50 rpm) while spherical and regular pellets at a high speed (150 rpm) The higher concentration of loess was added, the smaller size of a pellet was formed during the submerged culture of the strain. As shown in results, being cultured in the PDB medium supplemented with 1.0% loess the pellet size was maximally reduced to a fourth compared to the control. Evaluating the addition effect of several components of loess such as $SiO_2$, $Fe_2O_3$, $Al_2O_3$, $CaCO_3$, $CaSO_4$ and $MgCO_3$ on the reduction of mycellial pellet size the higher concentration was supplied, the smaller size of pellet was formed except $Al_2O_3$. And the smallest pellet size was recorded at the concentration of 1.0% (W/V) magnesium carbonate.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• Journal of Pharmaceutical Investigation
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• v.2 no.1
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• pp.5-13
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• 1972

There are some repels in which they studied on the change of acid-consuming capacity of aluminium hydroxide resulted from the passing of time. However, the relationship between grain sizes(particle sizes) and the acid-consuming capacity of dried aluminium hydroxide gel was not been studied. And studies on the grain sizes of aluminium hydroxide gel qualified by pharmacopoeia of Korea has not been reported. For the purpose of studying these two problems, the author prepared two-kinds of aluminium hydroxide gel as follows : $Na_2OAl_2O_3+CO_2------{\longrightarrow}Al(OH)_3{\cdots}{\cdots}{\cdots}$sample 1 $Al_2(SO_4)_318H_2O+6NaHCO_3{\longrightarrow}Al(OH)_3{\cdots}{\cdots}{\cdots}$sample 2 Both of sample 1 and 2 are found to be amorphous by X-ray diffraction methods, and their acid-consuming capacities were determined by the method of pharmacopeia of Korea. The grain size was measured by X-ray diffraction method, the particle sizes observed by electron microscopy, and the change of acid-consuming capacity with passing of time was determined by the method of pharmacopoeia of Korea. The results of these studies are summerized as follows: 1. The grain size was linearly enlarged as the time goes by. The aluminium hydroxide gel gradually crystallized in a certain period of time. 2. The acid-consuming capacity was in exponential function, decreased as the grain size of them enlarged. 3. One particle consists of tens of grains.4. Grinding the Sample obtained in any period of testing time in mortar did not change both their grain size and their acid-consuming capacity. 5. The grain size of dried aluminium hydroxide gel ought to be micronized less than $100{\AA}$ for maintaining the ability such as consumes 250m1 of 0. 1N-HC1 solution per Is of $Al(OH)_3$ described in pharmacopoeia of Korea.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.195-201
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• 1997

The present paper describes the effect of dry mixed grinding on kaolinite-aluminum trihydroxide mixture with a planetary ball mill before sintering and its influence on mullite formation during sintering. The size reduction of the mixture is market in the early stage of grinding and the obtained fine particles agglomerate subsequently with an increase of grinding time. The crystal structure of the mixture is collapsed easily into an amorphous one by planetary ball milling, of which amount increases with an increase of grinding time. Only mullite phase except for anatase as an inherent impurity in kaolinite appeared in the sintered body of the mixtures with mixed grinding as relatively lower temperature 1523K, while corundum, cristobalite, and Al-Si spinel phases, besides mullite were formed in the sintered body of the mixture without mixed grinding. Therefore, the mixed grinding treatment is very effective to improve the homogeneous mixing and disp-ersion of the mixture of raw materials on a micro scale and to decrease the thermal decomposition tem-perature by crystal structure change of them so as to obatin direct preparation of mullite with high purity at relatively low temperature.

• Journal of the Korean Magnetics Society
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• v.20 no.6
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• pp.212-215
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• 2010

Spin polarized tunneling studies were carried out with Al-Ga bilayer as a spin detector, by Meservey-Tedrow technique. The superconductor (SC)/Insulator (I)/Ferromagnet (FM) tunnel junctions were provided by ultra high vacuum molecular beam epitaxy (UHV-MBE) technique. The analysis of interfacial properties in the Al-Ga bilayer was also carried out by Auger electron spectroscopy. It was observed that the superconducting transition temperature and energy gap were raised in comparison with that of bulk Ga and pure ultrathin Al films. Current studies clearly show how one can modify the material properties at the interface just with a few monolayers.

• Korean Journal of Materials Research
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• v.20 no.2
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• pp.97-103
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• 2010

In this study, a new, relatively simple fabrication method for forming a mesoporous $Al(OH)_3$ film on Al substrates was demonstrated. This method, i.e., alkali surface modification, was simply comprised of dipping the substrate in a $5\times10^{-3}$ M NaOH solution at $80^{\circ}C$ for one minute and then immersing it in boiling water for 30 minutes. After alkali surface modification, a mesoporous $Al(OH)_3$ film was formed on the Al substrate, and its chemical state and crystal structure were confirmed by XPS and TEM. According to the results of the XPS analysis, the flake-like morphology after the alkali surface modification was mainly composed of $Al(OH)_3$, with a small amount of $Al_2O_3$. The mesoporous $Al(OH)_3$ layer was composed of three regions: an amorphousrich region, a region of mixed amorphous and crystal domains, and a crystalline-rich region near the $Al(OH)_3$ layer surface. It was confirmed that the stabilization process in the alkali surface modification strongly influenced the crystallization of the mesoporous $Al(OH)_3$ layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.