• Title/Summary/Keyword: active inductor

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Study on Performance Improvement and Size Reduction Using Active Inductors in MMIC Frequency Converter (능동인덕터 사용에 따른 MMIC 주파수 변환기의 성능향상과 면적축소에 관한 연구)

  • 구현철;박정호
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.7
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    • pp.1296-1303
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    • 1994
  • In this paper, a design of active inductors and their application in a frequency converter are proposed. In MMIC design, passive spiral inductor takes larger area than any other passive and active elements. A conventional spiral inductor generates undesired crosstalk, and its performance cannot have certainty and reproducibility. Meanwhile the active inductor eliminates these drawbacks, and operates for much wider bandwidth. Furthermore, its size is smaller and nearly independent of inductance. the performance of MMIC frequency converter with active inductors is directly compared with that of the frequency converters with spiral inductors. The size is 28.6% smaller with better performance in MMIC frequency converter.

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A Study on the Analysis of Internal Power Loss Including Leakage Inductance of Power Transformer for DAB Converter (DAB 컨버터용 전력 변압기의 누설 인덕턴스를 포함한 내부 전력 손실 분석에 관한 연구)

  • Yoo, Jeong Sang;Ahn, Tae Young;Gil, Yong Man
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.95-100
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    • 2022
  • In this paper, a power loss analysis technique of a high-frequency transformer of a bidirectional DAB (Dual Active Bridge) converter is reported. To miniaturize the transformer of the dual active bridge converter, a resonant inductor was designed with an air gap included low-coupled rate state core to combine leakage inductor with the resonant inductor which is required for soft-switching. In this paper, leakage inductance and magnetizing inductance, core material, type of winding and winding method are included in the dual active bridge transformer loss analysis process to enable optimal design at the initial design stage. Transformer loss analysis for dual active bridge with a switching frequency of 200 kHz and maximum output of 5 kW was executed, and elements necessary for design based on the number of turns on the primary side were graphed while maintaining the transformer turns ratio and window area. In particular, it was possible to determine the optimal number of turns and thickness of the transformer, and ultimately, the total loss of the transformer could be estimated.

Study on Noise Performance Enhancement of Tunable Low Noise Amplifier Using CMOS Active Inductor (CMOS 능동 인덕터를 이용한 동조가능 저잡음 증폭기의 잡음성능 향상에 관한 연구)

  • Sung, Young-Kyu;Yoon, Kyung-Sik
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.4
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    • pp.897-904
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    • 2011
  • In this paper, a novel circuit topology of a low-noise amplifier tunable at 1.8GHz band for PCS and 2.4GHz band for WLAN using a CMOS active inductor is proposed. This circuit topology to reduce higher noise figure of the low noise amplifier with the CMOS active load is analyzed. Furthermore, the noise canceling technique is adopted to reduce more the noise figure. The noise figure of the proposed circuit topology is analyzed and simulated in $0.18{\mu}m$ CMOS process technology. Thus, the simulation results exhibit that the noise performance enhancement of the tunable low noise amplifier is about 3.4dB, which is mainly due to the proposed new circuit topology.

CMOS Symmetric High-Q 2-Port Active Inductor (높은 Q-지수를 갖는 대칭 구조의 CMOS 2 단자 능동 인덕터)

  • Koo, Jageon;Jeong, Seungho;Jeong, Yongchae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.10
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    • pp.877-882
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    • 2016
  • In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

Embedded Switched-Inductor Z-Source Inverters

  • Nguyen, Minh-Khai;Lim, Young-Cheol;Chang, Young-Hak;Moon, Chae-Joo
    • Journal of Power Electronics
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    • v.13 no.1
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    • pp.9-19
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    • 2013
  • In this paper, a ripple input current embedded switched-inductor Z-source inverter (rESL-ZSI) and a continuous input current embedded switched-inductor Z-source inverter (cESL-ZSI) are proposed by inserting two dc sources into the switched-inductor cells. The proposed inverters provide a high boost voltage inversion ability, a lower voltage stress across the active switching devices, a continuous input current and a reduced voltage stress on the capacitors. In addition, they can suppress the startup inrush current, which otherwise might destroy the devices. This paper presents the operating principles, analysis, and simulation results, and compares them to the conventional switched-inductor Z-source inverter. In order to verify the performance of the proposed converters, a laboratory prototype was constructed with 60 $V_{dc}$ input to test both configurations.

A KY Converter Integrated with a SR Boost Converter and a Coupled Inductor

  • Hwu, Kuo-Ing;Jiang, Wen-Zhuang
    • Journal of Power Electronics
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    • v.17 no.3
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    • pp.621-631
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    • 2017
  • A KY converter integrated with a conventional synchronously rectified (SR) boost converter and a coupled inductor is presented in this paper. This improved KY converter has the following advantages: 1) the two converters use common switches; 2) the voltage gain of the KY converter can be improved due to the integration of a boost converter and a coupled inductor; 3) the leakage inductance of the coupled inductor is utilized to achieve zero voltage switching (ZVS); 4) the current stress on the charge pump capacitors and the decreasing rate of the diode current can be limited due to the use of the coupled inductor; and 5) the output current is non-pulsating. Moreover, the active switches are driven by using one half-bridge gate driver. Thus, no isolated driver is needed. Finally, the operating principle and analysis of the proposed converter are given to verify the effectiveness of the proposed converter.

Experimental Analysis of the Effect of integrated MEMS inductor on the 5GHz VCO performance

  • Lee, Joon-Yeop;Kim, Ji-Hyuk;Moon, Sung-Soo;Kim, Hyeon-Chul;Chun, Kuk-Jin
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.09a
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    • pp.160-164
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    • 2005
  • In this paper, MEMS inductor was integrated on a 5GHz VCO using BCB as low-k dielectric layer for MEMS inductor. The VCO core circuit is realized by IBM SiGe process. We varied the spiral inductor's suspension height and posit ion on circuit, and studied their circuit interference effect on VCO performance. The VCO with inductor placed on BCB with More height and the VCO with inductor that was not positioned above active area showed better characteristics.

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Design and Control of Modified Switched Inductor-ZSI (변형 SL-ZSI의 설계 및 제어)

  • Vu, Ho-Anh;Chun, Tae-Won;Lee, Hong-Hee;Kim, Heung-Geun;Nho, Eui-Cheol
    • Proceedings of the KIPE Conference
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    • 2013.11a
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    • pp.105-106
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    • 2013
  • This paper proposes a new topology with active switched-capacitor and switched-inductor impedance network, which can obtain a high boost factor with small shoot-through time. The proposed topology uses an active switched capacitor and switched-inductor impedance network in order to couple the main circuit and input dc source for boosting the output voltage. The proposed topology contains all advantages of the classical Z-source inverter. Comparing with other topologies, the proposed topology uses lesser component and the voltage boost inversion ability significantly increases. The theoretical analysis, pulse width modulation control strategies, and a comparison with classical ZSI have been given in this paper. Both simulation and experimental results will be presented to verify the advantages of the proposed topology.

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Comparison of Active-Clamp and ZVT Techniques Applied to Tapped-Inductor DC-DC Converter with Low Voltage and Large Current

  • Abe Seiya;Ninomiya Tamotsu
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.222-226
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    • 2001
  • This paper compares three kinds of soft-switching circuits from viewpoints of surge suppression, load characteristic, and power efficiency for a tapped-inductor buck converter with low voltage and high current. As a result, these soft-switching techniques have achieved much higher efficiency of $80\%$ when compared with a hard-switching buck converter for the output condition of 1V and 20A.

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Design and Fabrication of 0.25 μm CMOS TIA Using Active Inductor Shunt Peaking (능동형 인덕터 Shuut Peaking을 이용한 0.25 μm CMOS TIA 설계 및 제작)

  • Cho In-Ho;Lim Yeongseog
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.9 s.100
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    • pp.957-963
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    • 2005
  • This paper presents technique of wideband TIA for optical communication systems using TSMC 0.25 ${\mu}m$ CMOS RF-Mixed mode. In order to improve bandwidth characteristics of an TIA, we use active inductor shunt peaking to cascode and common-source configuration. The result shows the 37 mW and 45 mW power dissipation with 2.5 V bias and 61 dB$\Omega$ and 61.4 dB$\Omega$ transimpedance gain. And the -3 dB bandwidth of the TIA is enhanced from 0.8 GHz to 1.45 GHz in cascode and 0.61 GHz to 0.9 GHz in common-source. And the input noise current density is $5 pA/\sqrt{Hz}$ and $4.5 pA/\sqrt{Hz}$, and -10 dB out put return loss is obtained in 1.45 GHz. The total size of the chip is $1150{\times}940{\mu}m^2$.