The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
권호 표지

Design and Fabrication of 0.25 μm CMOS TIA Using Active Inductor Shunt Peaking

능동형 인덕터 Shuut Peaking을 이용한 0.25 μm CMOS TIA 설계 및 제작

  • Cho In-Ho (Ace Technologies Corp.) ;
  • Lim Yeongseog (School of Electronic, Computer and Telecommunications Engineering, Chonnam National University)
  • 조인호 ((주)에이스테크놀로지) ;
  • 임영석 (전남대학교 전자컴퓨터정보통신공학부)
  • Published : 2005.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper presents technique of wideband TIA for optical communication systems using TSMC 0.25 ${\mu}m$ CMOS RF-Mixed mode. In order to improve bandwidth characteristics of an TIA, we use active inductor shunt peaking to cascode and common-source configuration. The result shows the 37 mW and 45 mW power dissipation with 2.5 V bias and 61 dB$\Omega$ and 61.4 dB$\Omega$ transimpedance gain. And the -3 dB bandwidth of the TIA is enhanced from 0.8 GHz to 1.45 GHz in cascode and 0.61 GHz to 0.9 GHz in common-source. And the input noise current density is $5 pA/\sqrt{Hz}$ and $4.5 pA/\sqrt{Hz}$, and -10 dB out put return loss is obtained in 1.45 GHz. The total size of the chip is $1150{\times}940{\mu}m^2$.

본 논문에서는 TSMC 0.25 ${\mu}m$ CMOS RF-Mixed mode 공정 기술을 이용하여 초고속 광통신 시스템의 수신부에 사용되는 광대역 transimpedance amplifier를 설계하였다. 특히 광대역을 구성하기 위해 cascode와 common-source 구조에 active inductor shunt peaking을 이용하여 설계 및 제작하였으며, 측정 결과 gain 변화 없이 -3 dB 대역폭 특성이 cascode는 0.8 GHz에서 $81\%$ 증가한 1.45 GHz, common-source는 0.61 GHz에서 $48\%$ 증가한 0.9 GHz 결과가 나왔으며, 전체 파워 소비는 바이어스 2.5 V를 기준으로 37 mW와 45 mW이며, transimpedance gain은 61 dB$\Omega$과 61.4 dB$\Omega$을 얻을 수 있었다. 그리고 input noise current density도 상용 TIA와 거의 비슷한 $5 pA/\sqrt{Hz}$와 $4.5 pA/\sqrt{Hz}$를 가지며, out put Return loss는 전 대역에서 -10 dB 이하의 정합 특성을 보였다. 그리고 전체 chip 사이즈는 $1150{\times}940{\mu}m^2$이다.

Keywords

References

  1. Sunderarajan S. Mohan, et al., 'Bandwidth extension in CMOS with optimized on-chip inductors', IEEE Journal of Solid-state Circuits, vol. 35, no. 3, Mar. 2000
  2. Q. Huang, et al., 'The impact of scaling down to deep submicron on CMOS RF circuits', IEEE Journal of Solid-State Circuits, vol. 33, no. 7, Jul. 1998
  3. Behzad Razavi, Design of Analog CMOS Integrated Circutis, McGraw-Hill, New York, 2001
  4. Yu-Chang Chen, Shey-Shi Lu, 'Analysis and design of CMOS brodband amplifier with dual feedback loops', IEEE Asia-Pacific Conference, pp. 245-248, Aug. 2002
  5. Behzad Razavi, Design of Analog CMOS Integrated Circutis, McGraw-Hill, Chicago, 2001
  6. Behzad Razavi, Design of Integrated Circuits for Optical Communications, McGraw-Hill, New York, pp. 106-110, 2003
  7. Adel S. Sedra, Microelectronic Circuits, Oxford University Press, New York, pp. 622-626, 1998
  8. Behzad Razavi, Design of Integrated Circuits for Optical Communications, McGraw-Hill, New York, pp. 110-114, 2003
  9. Thomas H. Lee, The Design of CMOS Radio Frequency Integrated Circuit, Cambridge University Press, New York, 1998
  10. James J. Morikuni, Sung-Mo Kang, 'Analysis of inductive peaking in photoreceiver design', Journal of Lightwave Technology, vol. 10, no. 10, Oct. 1992
  11. Yong-Hun Oh, et al., 'A 2.5 Gb/s CMOS trans-impedance amplifier using a novel active inductor load', IEEE European Solid-State Circuits Conference, Sep. 2001