• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.79-80
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• 2007

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.109-109
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• 2010

$Er^{3+}$ ion shows a stable and efficient luminescence at 1.54mm due to its $^4I_{13/2}\;{\rightarrow}\;^4I_{15/2}$ intra-4f transition. As this corresponds to the low-loss window of silica-based optical fibers, Er-based light sources have become a mainstay of the long-distance telecom. In most telecom applications, $Er^{3+}$ ions are excited via resonant optical pumping. However, if nanocluster-Si (nc-Si) are co-doped with $Er^{3+}$, $Er^{3+}$ can be excited via energy transfer from excited electrical carriers in the nc-Si as well. This combines the broad, strong absorption band of nc-Si with narrow, stable emission spectra of $Er^{3+}$ to allow top-pumping with off-resonant, low-cost broadband light sources as well as electrical pumping. A widely used method to achieve nc-Si sensitization of $Er^{3+}$ is high-temperature annealing of Er-doped, non-stoichiometric amorphous thin film with excess Si (e.g.,silicon-rich silicon oxide(SRSO)) to precipitate nc-Si and optically activate $Er^{3+}$ at the same time. Unfortunately, such precipitation and growth of nc-Si into Er-doped oxide matrix can lead to $Er^{3+}$ clustering away from nc-Si at anneal temperatures much lower than ${\sim}1000^{\circ}C$ that is necessary for full optical activation of $Er^{3+}$ in $SiO_2$. Recently, silicon-rich silicon nitride (SRSN) was reported to be a promising alternative to SRSO that can overcome this problem of Er clustering. But as nc-Si formation and optical activation $Er^{3+}$ remain linked in Er-doped SRSN, it is not clear which mechanism is responsible for the observed improvement. In this paper, we report on investigating the effect of separating the nc-Si formation and $Er^{3+}$ activation by using hetero-multilayers that consist of nm-thin SRSO or SRSN sensitizing layers with Er-doped $SiO_2$ or $Si_3N_4$ luminescing layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.230-230
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• 2010

유기물 반도체 화합물인 Cu-Pc(copper(II)-phthalocyanine)는 우수한 전기적 광학적 특성을 가지며, OLED, MISFET등 소자로서의 활용도가 높다. Cu-Pc 화합물은 $\alpha$-phase, $\beta$-phase, $\gamma$-phase를 포함하는 여러 가지 다결정 polymer로 존재할 수 있다. 가장 잘 알려진 구조로는 열적으로 준안정적인 $\alpha$-phase와 열적으로 안정적인 $\beta$-phase가 있다. Cu-Pc 박막의 구조 및 흡수 특성과 전기적 특성에 대한 기술이 확실히 규명되지 않아 본 연구에서는 두께와 열처리 조건에 따른 결정성 및 방향성을 조사하기 위하여 $\alpha$-phase와 $\beta$-phase의 phase transition 현상 및 전기적 광학적 특성을 규명 하고자 한다. 진공증착 방법 중 하나인 PVD 방법의 thermal evaporation deposition을 이용하여 glass, ITO 기판위에 두께와 열처리에 따른 전기적?광학적 특성을 연구하였다. Cu-Pc 박막의 성장두께는 5nm~50nm 이내로 fluxmeter 및 thickness monitor를 이용하여 제어하였다. 5nm~50nm의 두께에 따른 기판온도를 $200^{\circ}C$로 고정하여 전열 처리 및 후열 처리하여 온도에 따른 박막을 성장한 후, 결정 구조 및 특성 변화와 phase transition 분석하였다. 제작된 Cu-Pc의 박막은 $\alpha$-phase와 $\beta$-phase로 구분할 수 있으며, 열처리에 따른 phase transition 현상이 뚜렷함을 알 수 있다. XRD(X-ray diffraction)를 통하여 박막에 대한 결정 구조 분석 및 FE-SEM(field emission scanning electron microscopy)와 AFM(atomic force microscopy)을 이용하여 Cu-Pc 박막의 구조적 결정성과 방향성 등, 표면 상태와 형상구조에 대해 표면의 특성을 측정하며, 광 흡수도(UV-visible absorption spectra)을 이용하여 phase transition 현상에 따른 I-V 특성을 비교분석 하였다.

• Korean Journal of Food Science and Technology
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• v.32 no.5
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• pp.985-990
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• 2000

${\zeta}-Carotene$ was subjected to ozonolysis in ice-cold dichloromethane. The ozonolysis products were fractionated with a silica column and the carbonyl fraction was analyzed by ODS-HPLC with a photodiode array detector. ${\zeta}-Carotene$ was solubilized in toluene, and then oxidized by incubating at $37^{\circ}C$, 72 hr under atmospheric oxygen. Carbonyl compound and acidic compound were produced. In comparison with autoxidation and ozonolysis, each compound showed the same retention time and UV-vis spectra were identical to the reference cleavage products prepared by ozonolysis of ${\zeta}-carotene$. Absorption spectrum of acidic compound was similar to that of standard 4,5-didehydrogeranyl geranyl acid which is known to possess biological activity. Thus, eccentric cleavage of ${\zeta}-carotene$ was confirmed to occur in vitro under oxidation condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1074-1078
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• 2004

열 중착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 박막은 열처리를 하지 않은 경우와 열처리 조건을 $150^{\circ}C$ 로 후열(annealing) 처리 하는 방식으로 하였으며 후열 처리한 경우 $150^{\circ}C$에서의 열처리 지속 시간을 각각 2시간, 3시간, 4시간으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로파의 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 HOMO(highest occupied molecular orbital), LUMO(lowest unoccupied molecular orbital) 준위의 밴드갭의 shift 현상과 관련지어 설명하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 지속 시간에 따른 CuPc 박막의 전기전도도 특성은 2시간으로 지속한 경우의 박막의 경우 가장 좋았으며 그 보다 더 오랜 시간 동안 열처리를 지속한 경우에는 전기 전도 특성이 오히려 나빠짐을 알 수 있었다.

• Journal of Radiation Protection and Research
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• v.3 no.1
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• pp.23-28
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• 1978

In order to investigate corelation between contents of dioctylphthalate in polyvinylchloride blent dibutyl tin dilaulate with dibutyl tin maleate as stabilizer and the behaviors of radiation resistance as well as electrical conductivity on irradiated specimens, several observations were carried out. A characteristic peak observed in the range of $1,540-1,640cm^{-1}$ on infrared spectra shows such a sensitive response to radiation as the intensity decreases with increasing doses and that this tendency strongly depressed in the presence of plasticizer. It is seemingly attributed for origin of the peak to the existence of RCOO- ion resulting from dissociation of stabilizere, further the depressive effect of decreasing peak intensity influenced by radiation seems to be caused by resonance absorption in benzen ring being a consistituent of plasticizer. It is also suggestive to be use the peak behavior influenced by radiation as a criterion for the evaluation of radiation resistance of PVC. Further the results obtained from electrical conductivity measurement also exhibit reasonable characteristics explainable with views used for the interpretation of the peak behavior mentioned previousely.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.254-254
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• 2010

Cu-Pc(copper(II)-phthalocyanine)는 박막의 형성과정에서 열처리 방식과 온도에 따라 박막의 구조가 변하며, 구조로는 열적으로 준 안정적인 $\alpha$-phase와 열적으로 안정적인 $\beta$-phase가 있다. 본 연구에서는 Cu-Pc 박막의 열적으로 안정적인 $\beta$-phase 구조에 대해 온도 조건 변화에 따른 표면 결정 성장의 특성을 연구하고자 한다. 진공증착 방법 중 하나인 thermal evaporation deposition을 이용하여 glass 기판위에 전열 처리 및 후열 처리에 대해 온도 조건 변화에 따른 $\beta$-phase type의 표면 결정 특성을 연구하였다. Cu-Pc 박막의 성장두께는 50nm 일정한 두께로 fluxmeter 및 thickness monitor를 이용하여 제어하였다. 50nm의 두께에 따른 기판온도를 $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$로 전열 처리한 후 각각 전열 처리한 기판온도에 대해 1hour, 2hour, 3hour 후열 처리하여 온도 조건에 따른 박막을 성장한 후, $\beta$-phase type에 대한 결정 구조 및 표면 특성 변화를 분석하였다. 제작된 Cu-Pc의 박막은 $\beta$-phase type으로, 열처리에 따른 $\beta$-phase transition 현상을 연구하였다. XRD(X-ray diffraction)를 통하여 박막에 대한 결정 구조 분석 및 FE-SEM(field emission scanning electron microscopy)을 이용하여 Cu-Pc 박막의 구조적 결정성과 방향성 등, 표면 상태와 형상구조에 대해 표면의 특성을 분석하며, 광 흡수도(UV-visible absorption spectra)을 이용하여 온도 조건에 따른 투과/흡수 현상을 비교분석하였다.

• Advances in materials Research
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• v.2 no.2
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• pp.77-91
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• 2013

High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.86-92
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• 2019

Although perylene bisimide derivatives have advantages such as excellent thermal stability and high luminance efficiency, they have poor solubility characteristics in organic solvents. In this research, in order to improve the solubility characteristics, we prepared perylene bisimide derivatives (1C) and (2C) with swallow-tail substituted imide, which is known to lead to excellent solubility. The structures and properties of swallow-tail perylene bisimide (1C) and (2C) were analyzed by $^1H-NMR$, FT-IR, UV/Vis spectroscopy, and thermogravimetric analysis (TGA). The maximum absorption wavelengths of (1C) and (2C) in the UV/Vis spectrum were 558 nm and 556 nm, respectively, and the maximum emission wavelengths were 602 nm and 600 nm, respectively. In the TGA, (1C) demonstrated good thermal stability with less than 5 wt% weight loss up to $242^{\circ}C$. In the solubility test, (1C) and (2C) exhibited solubilities of more than 5 wt% in chloroform, ethyl acetate, and dimethylformamide, but not in methanol. When the compounds (1C) and (2C) were mixed with PMMA (polymethyl methacrylate), thin films showed peaks at 679 nm and 677 nm, respectively, in the photoluminescence spectra. (1C) was found to be a possible candidate as red organic phosphor for hybrid LEDs.