Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.97-98
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- 2007
Growth and temperature dependence of energy band gap for $CuGaSe_2$ Single Crystal Thin Film by Hot Wall Epitaxy
Hot Wall Epitaxy(HWE)법에 의한 $CuGaSe_2$ 단결정 박막의 성장과 에너지 밴드갭의 온도 의존성
- Lee, Sang-Youl (Department of Physics, Chosun University) ;
- Hong, Kwang-Joon (Department of Physics, Chosun University)
- Published : 2007.06.21
Abstract
A stoichiometric. mixture of evaporating materials for
Keywords
- $CuGaSe_2$ single crystal thin films;
- optimum growth condition;
- photoluminescence;
- double crystal X-ray diffraction (DCXD);
- energy band gap