• Journal of the Korean Society for Precision Engineering
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• v.20 no.11
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• pp.117-126
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• 2003

GA(genetic algorithm) has a powerful searching ability and is comparatively easy to use and to apply as well. By that reason, GA is in the spotlight these days as an optimization skill for mechanical systems.$^1$However, GA has a low efficiency caused by a huge amount of repetitive computation and an inefficiency that GA meanders near the optimum. It also can be shown a phenomenon such as genetic drifting which converges to a wrong solution.$^{8}$ These defects are the reasons why GA is not widdy applied to real world problems. However, the low efficiency problem and the meandering problem of GA can be overcomed by introducing parallel computation$^{7}$ and gray code$^4$, respectively. Standard GA(SGA)$^{9}$ works fine on small to medium scale problems. However, SGA done not work well for large-scale problems. Large-scale problems with more than 500-bit of sere's have never been tested and published in papers. In the result of using the SGA, the powerful searching ability of SGA doesn't have no effect on optimizing the problem that has 96 design valuables and 1536 bits of gene's length. So it converges to a solution which is not considered as a global optimum. Therefore, this study proposes ExpGA(experience GA) which is a new genetic algorithm made by applying a new probability parameter called by the experience value. Furthermore, this study finds the solution throughout the whole field searching, with applying ExpGA which is a optimization technique for the structure having genetic drifting by the standard GA and not making a optimization close to the best fitted value. In addition to them, this study also makes a research about the possibility of GA as a optimization technique of large-scale design variable problems.

• Computational Structural Engineering
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• v.8 no.2
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• pp.123-132
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• 1995

Genetic Algorithms(GA), which are based on the theory of natural evolution, have been evaluated highly for their robust performances. Traditional GA has mostly used binary code for representing design variable. The binary code GA has many difficulties to solve optimization problems with continuous design variables because of its large computer core memory size, inefficiency of its computing time, and its bad performance on local search. In this paper, a real code GA is proposed for dealing with the above problems. So, new crossover and mutation processes of GA are developed to use continuous design variables directly. The results of read code GA are compared with those of binary code GA for several single and multiple objective optimization problems. As a result of comparisons, it is found that the performance of the real code GA is better than that of the binary code GA, and concluded that the real code GA developed here can be used for the general optimization problem.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.235-240
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• 2003

The development of large area GaN substrates is one of important issues in expanding of GaN-based applications. In order to investigate the possibility, GaN thick films were grown by a sublimation technique, using MOCVD-GaN films grown on a sapphire as a seed-crystal substrate and a commercial GaN powder as a source material. The pressure in chamber under the fixed flow rate of $N_2$ gas and $NH_3$ gas was kept at 1 atmosphere and the effects of the various processing parameters such as the distance between source material and seed crystal, the temperature of top- and bottom heater and the growth time during the growth of GaN thick film were investigated. The growth feature and microstructure of the GaN thick films were observed by SEM and XRD. The optical bandgap properties and the defects were evaluated by the PL measurement. By these results, the growth conditions such as the distance between the GaN source and the seed substrate, the growth temperature and the growth time were determined for the satisfied growth of GaN thick films.

• Journal of the Korean Society of Food Science and Nutrition
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• v.33 no.8
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• pp.1286-1293
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• 2004

This study was conducted to investigate the biological activity and hepatoprotective effect of various fractions and isolated compounds from Kochiae fructus (KF) extract on D-galactosamine (GaIN)-intoxicated rats. Male Sprague-Dawley rats were divided into control, GaIN treated group (GaIN), GaIN plus KF methanol extract treated group (KFM 200-GaIN), GaIN plus KF butanol extract treated group (KFB 200-GaIN), GaIN plus momordin Ic treated group (Momordin Ic 30-GaIN) and GaIN plus oleanolic acid treated group (Oleanolic acid 30-GaIN). KFM (200 mg/kg BW), KFB (200 mg/kg BW), momordin Ic (30 mg/kg BW) and oleanolic acid (30 mg/kg BW) were orally administered once a day for 14 days. GaIN (400 mg/kg BW) was injected at 30 minutes after the final administration of the compounds. The activities of serum aspartate aminotransferase and alanine aminotransferase were increased in the GaIN group compared to the control group and significantly lower in the KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group than in the GaIN group. Hepatic lipid peroxide level was increased in the GaIN group compared to the control group and was lower in the KFM 200-GaIN, KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group than in the GaIN group. Activities of xanthine oxidase and aldehyde oxidase in liver were higher in the GaIN group than in the control group and were significantly decreased in the KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group compared to the GaIN group. Hepatic glutathione, ${\gamma}$-glutamylcysteine synthetase and catalase activities were decreased in the GaIN group compared to the control group and were higher in the KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group than in the GaIN group. Activities of hepatic glutathione reductase, glutathione S-transferase, superoxide dismutase and glutathione peroxidase were lower in the GaIN group than in the control group and were improved in the KFM 200-GaIN, KFB 200-GaIN, momordin Ic 30-GaIN and oleanolic acid 30-GaIN group compared to the GaIN group. Therefore, the current results indicate that momordin Ic administration alleviated the GaIN-induced adverse effect through enhancing the antioxidant enzyme activities.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.1-7
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• 2021

ε-Ga2O3, a metastable phase of Ga2O3, has excellent compatibility with substrates having a hexagonal structure or a quasi-hexagonal structure, so that a film having a relatively lower surface roughness and defect density than β-Ga2O3 can be obtained easily. Accordingly, we attempted to fabricate a high-quality β-Ga2O3 film with a low surface roughness and defect density using the property of phase transition to β-Ga2O3 when ε-Ga2O3 is annealed at a high temperature. For this, the growth of high-quality ε-Ga2O3 films must be preceded. In this study, the optimal flow rate was investigated by analyzing the structural and morphological characteristics of the ε-Ga2O3 film according to the supplied precursor ratio. In addition, the annealing condition and the effect of β-Ga2O3 mixed in the ε-Ga2O3 film on the crystallinity of β-Ga2O3 after phase transition were also investigated.

• Journal of architectural history
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• v.21 no.5
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• pp.7-18
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• 2012

On behalf of the royal women, SangGung(尙宮:The head of female servants in the palace) and NaIns(內人: Female servants caring for royal families in the palace) were dispatched in order to attend a funeral at the royal tomb. The NaInGaGa(內人假家) is the temporary building for SangGung and NaIns in the royal tomb. It is comprised of lodgings for them and also workrooms and warehouses to prepare ritual offering for the dead King or Queen. In the early Joseon dynasty, the NaInGaGa was utilized until a funeral at the royal tomb. Since 1674, NaInGaGa for the 3 years-period lamentation was started constructing separately. At these processes, the plan and placement of NaInGaGa was changed. This study based on the SanReungDoGam-EuiGwae (山陵都監-儀軌: The report on constructing royal tomb). The SanReungDoGam-EuiGwae written since 1800 have illustration about NaInGaGa. The illustration and explanation about NaInGaGa become a important clue that make suppose detailed space of NaInGaGa.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• Journal of IKEEE
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• v.24 no.4
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• pp.1167-1171
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• 2020

In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order to improve the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of the graded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics as same as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaN gate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• Resources Recycling
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• v.4 no.3
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• pp.10-18
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• 1995

Recycling of GaAs scrap which occurs durmg the manufachre of GaAs waters is. therefore, required to solve the environmentalproblcrns caused by arsenic metal and to reutilize gallium which is a expensive metal. A thema-analyticalstudy (thermogravimeg. and derivative thermogravimetry) tor the evaporation behavior of Fa, As from Gak\ulcorner scrap powdersat vacuum atmosphere(2-2.5X 10'mmHg); was primarily performed to identi j the possibility of Ga extraction. Until79YC, the weight change of G d s porvder does not take place, at 800-970C range GaAs vaporizes as the GaAs compound,and over 1WO"C it decamposes mto Ga and As md then As vaporizes rapidly as a result of the difference af vaporprcssure for Ga and As, liquid Ga rcmains eventually.mains eventually.