• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.107-109
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• 2003

This paper was to measure the structure, piezoelectric properties of $0.03Pb(Mg_{0.5}W_{0.5})O_3$ - $0.12Pb(Sb_{0.5}Nb_{0.5})O_3$ - $0.85Pb(Zr_{0.52}Ti_{0.48})O_3$ + $0.5[wt%]MnO_2$ ceramics dropped with additive CuO after manufacturing the specimens with a general method. It is shown that X-ray diffraction pattern variation of lines (211) have tendency to move minutely by addition of additive CuO. According to dropping with Cu, the dielectric constant at 20[$^{\circ}C$] reduced to CuO 3.0[wt%]. In case of sintering at 1050[$^{\circ}C$], dielectric constant was maximum value 623.59 at CuO 1.0[wt%]. Dielectric loss was maximum value 2.7[%] at Cu 2.0[wt%] in case of sintering at 1050[$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.296-299
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.35-42
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• 1990

In the present investigation, ceramic PZT and Polymer were prepared. The former is Pb[(Sn1/2Sb1/2)0.1 Ti0.27Zr0.63]O3 including Pb(Sn1/2Sb1/2)O3 with good pyroelectric effect, and the latter PVA(Poly Vinyl Alcohol) with good plasticity. Then, they were fabricated to be flat by using 0-3 connectivity which is rather easily fabricated and capable of making thin film, extending surface area among the connectivities. Such were applied to the sample as variation of intensity of poling field, poling temperature, volume fraction between ceramic and polymer. Then dielectric constant, pyroelectric current, pyroelectric coefficient and the figure of merit were measured. And then their effects on pyroelectric characteristics were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.423-426
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• 2000

The 3-D $31.5$\times$31.5$\times$2.5mm$^3$model of contour vibration mode piezoelectric transformer with Pb($Ni_{1/2}$$W_{1/2}$)$O_3$-Pb(Zr,Ti)$O_3$ ceramics was simulated by ANSYS according to the dot size 17, 18, 19, 20, 21 $mm\phi$ and analyzed the results. The mechanical quality factor of the 3-D model was decreased with the dot size and increased as 2605 at 20 $mm\phi$ and after then decreased again. The output voltage of that sample was 74123 [V] and the maximum stress of the dot electrode at that sample was 288[$10^7$N/$m^2$] and the maximum displacement of the ring electrode at that sample was 128 [$\mu\textrm{m}$].

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.375-380
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• 2004

Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-PbZrO$_3$-PbTiO$_3$ thick films were screen-printed on platinized alumina substrates and fired at 800-1000$^{\circ}C$. Two kinds of powders with different particle size were prepared by attrition and ball milling methods. Effects of particle size of starting material on the microstructure and electrical properties of the thick films were investigated. Average particle size of attrition milled-powder (0.44 ${\mu}$m) was much smaller than that of ball milled-powder (2.87 ${\mu}$m). Average grain size of the thick film prepared from attrition-milled powder was smaller than that of the thick film prepared from ball-milled powder at the sintering temperature of 800$^{\circ}C$. However, the difference in average particle size became smaller with increasing the sintering temperature. Thick films prepared from attrition-milled powders showed more uniform and denser microstructures at all firing temperatures. Thick films prepared from attrition-milled powders had better electrical properties at the firing temperature above 900$^{\circ}C$ than thick films prepared from ball-milled powders. Dielectric constant, remanent polarization and coercive field of the thick film prepared from attrition-milled powders and fired at 900$^{\circ}C$ were 559, 16.3 ${\mu}$C/cm$^2$, and 51.3 kV/cm, respectively.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.46-52
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• 1998

In this study, polarization switching characteristics of Pb(ZrxTil-x)O3 (PZT) thin films were investigated. Switching times(ts) were found to be decreased as the Zr mol% was increased. But, the switching peak currents(Imax) showed the largest value at 50 mol% Zr. As a result of this experiment, ts was found to be depended on the remanent polarization and coercive field and also Imax strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM(metalferroelectric metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages(4, 8, 10, 12 and 14 volts). As the applied voltages increased, ts and Imax were found to be decreased and increased, respectively. In case of fatigued specimen which we applied $\pm$10 volts square pulse for 1010 cycles, ts and Imax were found to be shorter and smaller than those of virgin specimens. This is due to the decrease of the remanent polarization and the increase of the coercive field.

• ETRI Journal
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• v.31 no.6
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• pp.688-694
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• 2009

In this paper, we present the results of a preliminary study on the piezoelectric energy harvesting performance of a Zr-doped $PbMg_{1/3}Nb_{2/3}O_3-PbTiO_3$ (PMN-PZT) single crystal beam. A novel piezoelectric beam cantilever structure is used to demonstrate the feasibility of generating AC voltage during a state of vibration. The energy-harvesting capability of a PMN-PZT beam is calculated and tested. The frequency response of the cantilever device shows that the first mode resonance frequency of the excitation model exists in the neighborhood of several hundreds of hertz, which is similar to the calculated value. These tests show that several significantly open AC voltages and sub-mW power are achieved. To test the possibility of a small scale power source for a ubiquitous sensor network service, energy conversion and the testing of storage experiment are also carried out.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.218-218
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• 2008

최근 미관을 위하여 소형 네온관 등이 사용되고 있다. 따라서 네온관 등 구동에 사용되는 인버터는 안정기 역할을 하면서 소형화와 경량화가 중요한 요소이다. 본 연구는 압전 특성이 우수한 PZT계 세라믹스 조성인 $(Pb_{0.94}Sr_{0.06})[(Ni_{1/2}W_{1/2})_{0.02}(Mn_{1/3}Nb_{2/3})_{0.07}(Zr_{0.51}Ti_{0.49})_{0.91}]O_3$에 특성 향상을 위해 PbO, $Fe_2O_3$, $CeO_2$, Xwt% $Nb_2O_5$ 조성별로 첨가하였으며 그에 따른 유전, 압전 특성을 조사하고 또한 Rosen type의 압전 트랜스포머를 제작하여 각 조성별 변환효율을 측정하였다. 실험방법은 일반적인 세라믹스 제조공정으로 파우더 혼합 후 24시간 ball milling하고 $850^{\circ}C$ 에서 2시간 하소 후 $1230^{\circ}C$에서 2시간 소결하였다. 또한 최종 소결 시편을 이용하여 Rosen type의 압전 트랜스포머를 제작하였다. 상 분석을 위해 XRD를 이용하여 perovskite구조를 확인하고 미세구조확인을 위해 SEM으로 관찰하였다. 압전 특성을 평가하기 위해 압전 $d_{33}$ Meter를 사용하였으며, Impedence analyzer HP 4194A를 이용하여 전기적 특성을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.80-83
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• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1477-1479
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• 2000

The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.