• 한국재료학회지
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• 제17권9호
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• pp.458-462
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• 2007

The effect of oxygen in the synthesis of oxide nanowires by using carbothermal reduction process have been studied thermodynamically and kinetically. By using laboratory air, ZnO nanowires could be fabricated in the carbothermal reduction process and a metal oxidation process. As the processing pressure decreases, the diameter of the nanowires decreases and the oxygen vacancy increases. As the processing pressure increases, the oxygen vacancy decreases and the shape of the ZnO becomes plate-like.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.46-47
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• 2006

Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.34.1-34.1
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• 2009

A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.19-22
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• 2002

Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice planes, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice planes, respectively. In photoluminescence (PL), the peak energy of near band-edge (NBE) emission was determined for nanobelts, nanorods, and nanowires.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.349-352
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• 2012

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.54-54
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• 2010

This article reports a spontaneous method for controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the Zn random motion of seeds formed by surface phase separation by Mg injection near an evaporation temperature of Zn. The random motion of single crystal MgZnO seeds with relative Zn rich phase played a vital role in the growth of the MgZnO nanowalls. The seeds were networked with increasing Zn flux compared with Mg flux and closing to the evaporation temperature of Zn on phase separation layers. We achieved fabrication of MgZnO nanowalls on various non- and conducting substrates by this advanced growth method. The MgZnO nanowalls hydrogen sensor showed an improved sensing performance compared to the MgZnO nanowires grown under the similar conditions. Based on the microstructural characterizations, the growth procedure and models for the evolution of the structure transition from MgZnO nanowires to nanowalls on the Si substrates are proposed for phased growth times.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.1-5
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• 2003

ZnO nanobelts, nanorods, and nanowires were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at 1380$^{\circ}C$. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice planes, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice planes, respectively. In cathodoluminescence (CL), the peak energy of near bandedge (NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.398-402
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• 2012

ZnSe/$SiO_2$ coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of $SiO_2$. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/$SiO_2$ coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the $SiO_2$-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.27.1-27.1
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• 2006

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.