Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Photoluminescence Characteristics of ZnO Nanowires Grown on a-, c- and m-plane Oriented 4H-SiC Substrates

4H-SiC 기판의 a-, c-, m-면방향에 따른 ZnO 나노선의 Photoluminescence 특성 분석

  • Kim, Ik-Ju (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Yer, In-Hyung (Department of Electrical Engineering, Korea University) ;
  • Moon, Byung-Moo (Department of Electrical Engineering, Korea University) ;
  • Kang, Min-Seok (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 김익주 (광운대학교 전자재료공학과) ;
  • 여인형 (고려대학교 전기전자전파공학부) ;
  • 문병무 (고려대학교 전기전자전파공학부) ;
  • 강민석 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2012.03.26
  • Accepted : 2012.04.05
  • Published : 2012.05.01
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Abstract

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

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References

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