Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Nitride/Oxide Etch Spectrum Data Verification by Using Optical Emission Spectroscopy

OES를 이용한 질화막/산화막의 식각 스펙트럼 데이터 분석

  • Park, Soo-Kyoung (Department of Electronic Engineering, Myongji University) ;
  • Kang, Dong-Hyun (Department of Electronic Engineering, Myongji University) ;
  • Han, Seung-Soo (Department of Information and Communication Engineering, Myongji University) ;
  • Hong, Sang-Jeen (Department of Electronic Engineering, Myongji University)
  • Received : 2012.03.21
  • Accepted : 2012.04.13
  • Published : 2012.05.01
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Abstract

As semiconductor device technology continuously shrinks, low-open area etch process prevails in front-end etch process, such as contact etch as well as one cylindrical storage (OCS) etch. To eliminate over loaded wafer processing test, it is commonly performed to emply diced small coupons at stage of initiative process development. In nominal etch condition, etch responses of whole wafer test and coupon test may be regarded to provide similar results; however, optical emission spectroscopy (OES) which is frequently utilize to monitor etch chemistry inside the chamber cannot be regarded as the same, especially etch mask is not the same material with wafer chuck. In this experiment, we compared OES data acquired from two cases of etch experiments; one with coupon etch tests mounted on photoresist coated wafer and the other with coupons only on the chuck. We observed different behaviors of OES data from the two sets of experiment, and the analytical results showed that careful investigation should be taken place in OES study, especially in coupon size etch.

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References

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