Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)

Materials Research Society of Korea (한국재료학회)
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Aspect ratio enhancement of ZnO nanowires using silicon microcavity

  • Kar, J.P. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Das, S.N. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Choi, J.H. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Lee, Y.A. (Nanobio Fusion Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, T.Y. (Nanobio Fusion Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Myoung, J.M. (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering)
  • Published : 2009.05.21
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Abstract

A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

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