• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.307-308
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• 2005

ZnO varistor ceramics were fabricated as a function of the sintering temperature from $1125^{\circ}C$ to $1200^{\circ}C$ with glass-frit 0.03wt% addition. The average grain size was increased from 10.4 ${\mu}m$ to 23.7 ${\mu}m$, and varistor voltage was decreased from 538 V to 329 V with rising of the sintering temperature. The nonlinear coefficient a showed similar value from 75 to 80 and leakage current of all specimens exhibited the result of $1{\mu}A$ at 82% of varistor voltage. But the clamping voltage ratio of the specimens sintered at $1175^{\circ}C$ was 1.37 at 25A [$8/20{\mu}s$]. Also, endurance of surge current and deviation of varistor voltage of sintered specimens at $1175^{\circ}C$ were $6400A/cm^2$, $\Delta$-3.32%, respectively.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.147-151
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• 2023

Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10^-11 Ω^-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10^-5 Ω^-1.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.23-27
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• 2008

We have investigated the effect of annealing on the structural and optical properties of polycrystalline Ga doped ZnO (GZO) films grown on glass substrates by RF-magnetron sputter at room temperature. The structural and optical properties of as-grown GZO films were characterized and then samples were annealed at $400{\sim}600^{\circ}C$ in $N_2$ ambient for 30, 60 minutes, respectively. The field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) were used to measure the grain size and the crystalline quality of the films. We found that the crystalline quality was improved and the grain size tends to be increased. The optical properties of GZO thin films were analyzed by UV-VIS-NIR spectrophotometers. It is found that optical properties of thin films are increased by annealing and can be used for transparent electrode application. We believe that the appropriate post-growth heat treatment could be contributed to the improvement of GZO-based devices.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.476-480
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• 2004

AZO (Al-doped ZnO) thin films were deposited on glass by pulsed magnetron sputtering method, and their structural, electrical and optical properties were investigated. XRD patterns showed that a highly c-axis preferred AZO film was grown in perpendicular to the substrate when pulse frequency of 30 ㎑ was applied to the target. Microstructure of thin films showed that the fibrous grain of tight dome shape was grown. The deposition rate decreased linearly with increase of pulse frequency, and the lowest resistivity was 8.67${\times}$10$\^$-4/ $\Omega$-cm for the film prepared at pulse frequency of 30 ㎑. The optical transmittance spectra of the films showed a very high transmittance of 85∼90%, within visible wavelength region and exhibited the absorption edge of about 350 nm. The characteristics of the low electrical resistivity and high optical transmittance of AXO films suggested a possibility for the application to transparent conducting oxides.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.363-367
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• 2022

Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and optoelectrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an optoelectrical performance of the films, as deposited films show a figure of merit of 2.0×10^-5 𝛺^-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10^-5 𝛺^-1.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1667-1669
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• 2000

The 0.8Ba($Zn_{1/3}Ta_{2/3})O_3$-0.2Ba($Co_{1/3}Nb_{2/3})O_3$ ceramics were prepared by conventional mixed oxide method. The structural properties of the 0.8BZT-0.2BCN ceramics with the sintering temperature were investigated by XRD and SEM. The 0.8BZT-0.2BCN ceramics had a superstructure reflection plane of (100), (200). Increasing the sintering temperature. the ordering parameter of B-site atoms were increased. The lattice constant of 0.8BZT-0.2BCN ceramics was 3.97${\AA}$. Increasing the sintering temperature, the average gram sizes were increased. In the case of the 0.8BZT-0.2BCN ceramics sintered at 1500$^{\circ}C$, the average grain size and bulk density were 1.56${\mu}m$, 6.93$g/cm^3$, respectively.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.231-237
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• 2013

Thermodynamic modeling of the $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ complex ferrite system has been adopted as a rational approach to establish routes to better synthesis conditions for pure phase $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ complex ferrite. Quantitative analysis of the different reaction equilibria involved in the precipitation of $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ from aqueous solutions has been used to determine the optimum synthesis conditions. The spinel ferrites, such as magnetite and substitutes for magnetite, with the general formula $MFe_2O_4$, where M= $Fe^{2+}$, $Co^{2+}$, and $Ni^{2+}$ are prepared by coprecipitation of $Fe^{3+}$ and $M^{2+}$ ions with a stoichiometry of $M^{2+}/Fe^{3+}$= 0.5. The average particle size of the as synthesized $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$, measured by transmission electron microscopy (TEM), is 14.2 nm, with a standard deviation of 3.5 nm the size when calculated using X-ray diffraction (XRD) is 16 nm. When $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ ferrite is annealed at elevated temperature, larger grains are formed by the necking and mass transport between the $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ ferrite nanoparticles. Thus, the grain sizes of the $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ gradually increase as heat treatment temperature increases. Based on the results of Thermogravimetric Analysis (TGA) and Differential Scanning Calorimeter (DSC) analysis, it is found that the hydroxyl groups on the surface of the as synthesized ferrite nanoparticles finally decompose to $Ni_{0.5}Zn_{0.4}Cu_{0.1}Fe_2O_4$ crystal with heat treatment. The results of XRD and TEM confirmed the nanoscale dimensions and spinel structure of the samples.

• Journal of the Korean Magnetics Society
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• v.8 no.2
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• pp.62-66
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• 1998

We have studied on the magnetic properties of the specimen with additives Bi$_2$O$_3$and$V_2O_5$ that sintered at 900 $^{\circ}C$ for 4 hours for sybthesizing optimal Ni-Zn-Cu ferrite. Curie temperature rises from 240 $^{\circ}C$ to 270 $^{\circ}C$ as Ni contents increase. Magentic maximum induction$(B_m)$ increases from 2650 G to 3300 G, 3500 G in the specimens with $V_2O_5$ and Bi$_2$O$_3$resectively. On the contrary coercive force $(H_c)$ lowers to 2.05 Oe~1.05 Oe. Permeability all increase in the specimen with additives. In the specimen with additive Bi$_2$O$_3$, we have obtained the low relative loss factor of $6.3{\times}10^{-5}~7.84{\times}10^{-5}$ in the range of 1MHz due to increase of resistivity in grain boundary. In the specimen with additive $V_2O_5$ in spite of increase permeability relative loss factor increase of due to decrease of Q-value.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.491-496
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• 2011

Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-$H_2O$-TMA-$H_2O$). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at $100^{\circ}C$, so that the Al-doped film of 5 at% shows the lowest resistivity ($1.057{\times}10^{-2}{\Omega}{\cdot}cm$) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at $250^{\circ}C$ demonstrates the superior resistivity ($1.237{\times}10^{-4}{\Omega}{\cdot}cm$).