Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical, Structural and Optical Characteristic Analysis of Al-doped ZnO Film Deposited by Atomic Layer Deposition

Atomic Layer Deposition으로 증착된 Al-doped ZnO Film의 전기적, 구조적 및 광학적 특성 분석

  • Lim, Jung-Soo (Department of Electronics Engineering, Chungnam National University) ;
  • Jeong, Kwang-Seok (Department of Electronics Engineering, Chungnam National University) ;
  • Shin, Hong-Sik (Department of Electronics Engineering, Chungnam National University) ;
  • Yun, Ho-Jin (Department of Electronics Engineering, Chungnam National University) ;
  • Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University) ;
  • Kim, Yu-Mi (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
  • 임정수 (충남대학교 전자전파정보통신공학과) ;
  • 정광석 (충남대학교 전자전파정보통신공학과) ;
  • 신홍식 (충남대학교 전자전파정보통신공학과) ;
  • 윤호진 (충남대학교 전자전파정보통신공학과) ;
  • 양승동 (충남대학교 전자전파정보통신공학과) ;
  • 김유미 (충남대학교 전자전파정보통신공학과) ;
  • 이희덕 (충남대학교 전자전파정보통신공학과) ;
  • 이가원 (충남대학교 전자전파정보통신공학과)
  • Received : 2011.02.22
  • Accepted : 2011.05.23
  • Published : 2011.06.01
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Abstract

Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-$H_2O$-TMA-$H_2O$). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at $100^{\circ}C$, so that the Al-doped film of 5 at% shows the lowest resistivity ($1.057{\times}10^{-2}{\Omega}{\cdot}cm$) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at $250^{\circ}C$ demonstrates the superior resistivity ($1.237{\times}10^{-4}{\Omega}{\cdot}cm$).

Keywords

References

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