• Ecology and Resilient Infrastructure
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• v.7 no.4
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• pp.262-273
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• 2020

Amending biopolymers such as β-glucan (BG) and Xanthan gum (XG) generally enhances soil strength by ionic and hydrogen bonds between soil particles. Thus, biopolymers have been studied as eco-friendly construction materials in levees. However, physiological responses of plants grown on soil amended with biopolymers are not fully understood. This study focuses on the effects of biopolymers on the growth of Camelina sativa L. (Camelina) under excess zinc (Zn) stress. The optimal concentrations of BG and XG were confirmed to have a 0.5% ratio in soil depending on the physiological parameters of Camelina under excess Zn stress. The Zn binding capacity of biopolymers was investigated using 1,5-diphenylthiocarbazone (DTZ). The reduction of Zn damage in Camelina was evaluated by analyzing the Zn content and expression of heavy metal ATPase (HMA) genes under excess Zn stress. Amendments of BG and XG improved Camelina growth under excess Zn stress. In DTZ staining and ICP-OES analysis, Camelina grown on BG and XG soil showed less Zn uptake than normal soil under excess Zn stress. The Zn-inducible CsHMA3 gene was not stimulated by either BG or XG amendment under excess Zn stress. Moreover, both BG and XG amendments in soil exhibit Zn-stress mitigation similar to that of Zn-tolerant CsHMA3 overexpres sed Camelina. These results indicate that biopolymer-amended soils may influence the prevention of Zn absorption in Camelina under excess Zn stress. Thus, BG and XG are proven to be suitable materials for levee construction and can protect plants from soil contamination by Zn.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.138-139
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• 2013

본 연구는 ZnO-TFT 소자에 Hf의 첨가에 따른 소자 특성 및 게이트 바이어스 스트레스에 대한 특성에 대해 분석을 하였다. Hf-Zn-O 박막은 Hf의 조성이 증가함에 따라 작아지는 grain size로 인해 TFT 소자의 전계효과 이동도와 게이트 바이어스 스트레스에서의 문턱전압의 변화가 더 커지는 것을 확인하였다. 한편, Hf이 14at% 함유된 HZO-TFT에서는 이동도는 현저히 저하되었지만, 게이트 바이어스 스트레스에서의 문턱전압의 변화가 현저히 개선되는 것을 확인하였는데, 이는 Hf의 조성이 증가함에 따라 비정질화 되어 grain boundaries에 의한 trap의 영향이 줄어든 결과를 확인하였다. 또한, 전계효과 이동도와 소자의 안정성을 확보하기 위해, poly-ZnO와 amorphous-HZO로 구성된 다중층 채널 구조를 이용한 TFT소자에서는 전계효과 이동도과 소자의 안정성이 개선된 결과를 보였다. 이는 채널과 게이트 산화물의 interface charge trap의 감소와 back-channel effect가 감소한 결과임을 확인하였다.

• Journal of Plant Biotechnology
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• v.31 no.2
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• pp.109-113
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• 2004

In order to develop transgenic potato plants with enhanced tolerance to multiple stress, we constructed the transformation vector expressing both superoxide dismutase and ascorbate peroxidase genes in chloroplasts under the control of a stress-inducible SWPA2 promoter. Transgenic potato plants (cv. Superior and Atlantic) were generated using an Agrobacterium-mediated transformation system. Transgenic potato plants were regenerated on MS medium containing 100mg/L kanamycin. Genomic Southern blot analysis confirmed the incorporation of foreign genes into the potato genome. When potato leaf discs were subjected to methyl viologen (MV) at 10 $\mu$M, transgenic plants showed higher tolerance than non-transgenic or vector-transformed plants. To further study we selected the transgenic plant lines with enhanced tolerance against MV. These plants will be used for further analysis of stress-tolerance to multiple environmental stresses.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1266-1272
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• 2012

An InGaZnO thin film transistor with different gate lengths and widths have been fabricated and their device degradations with device sizes have been also performed after negative gate bias stress. The threshold voltage and subthreshold swing have been decreased with decrease of gate length. However, the threshold voltages were increased with the decrease of gate lengths. The transfer curves were negatively shifted after negative gate stress and the threshold voltage was decreased. However, the subthreshold swing was not changed after negative gate stress. This is due to the hole trapping in the gate dielectric materials. The decreases of the threshold voltage variation with the decrease of gate length and the increase of gate width were believed due to the less hole injection into gate dielectrics after a negative gate stress.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Journal of Plant Biotechnology
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• v.30 no.4
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• pp.399-403
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• 2003

In order to understand the protection effects of antioxidant enzymes against oxidative stress caused by various environmental stresses, transgenic tobacco (Nicotiana tabacum cv, Xanthi) plants expressing both copper/zinc superoxide dismutase (CuZnSOD) and ascorbate peroxidase (APX) in chloroplasts (referred to as CA plants) were subjected to highlight (1,100$\mu$mol m$^{-2}$ sec$^{-1}$) and chilling at 4$^{\circ}C$. The protection effects of CA plants using leaf discs were compared with those of transgenic plants expressing either CuZnSOD or APX in chloroplasts (SOD plants or APX plants, respectively) and non-transgenic (NT) plants. CA plants showed about 15％ protection in the photosynthetic efficiency (Fv/Fm) of photosystem II relative to NT plants 1 hr after treatment of both highlight and chilling, whereas they showed about 23％ protection in the redox state of P700 in photosystem I at 3 hr after treatment. SOD plants or APX plants showed an intermediate protection effect between CA plants and NT plants. These results demonstrated that the coexpression of CuZnSOD and APX in chloroplasts importantly involves in the protection effects against oxidative stress caused by various environmental stresses.

• Journal of The Korean Society of Grassland and Forage Science
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• v.27 no.2
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• pp.109-116
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• 2007

Environmental stress is the major limiting factor in plant productivity. As an effort to solve the global food and environmental problems using the plant biotechnology, we have developed transgenic tall fescue (Festuca arundinacea Schreb.) plants via Agrobacterium-mediated gene transfer method. To develop transgenic tall fescue plants with enhanced tolerance to the environmental stresses, both CuZn superoxide dismutase (CuZnSOD) and ascorbate peroxidase (APX) genes were incorporated in a pIG121 binary vector and the both of the genes were controlled separately by an oxidative stress-inducible sweet potato peroxidase 2 (SWPA2) premoter expressed in chloroplasts. Leaf discs of transgenic plants showed 10-30% less damage compared to the wild-type when they exposed to a wide range of environmental stresses including methyl viologen (MV), $H_2O_2$ and heavy metals. In addition, when $200{\mu}M$ MV was sprayed onto the whole plants, transgenic plants showed a significant reduction of visible damage compared to wild-type plants that were almost damaged. These results suggest that over expression of CuZnSOD and APX genes in transgenic plants might be a useful strategy to protect the crops against a wide range of environmental stresses.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.64-64
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.857-860
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• 2000

The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1627-1634
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• 2017

In this work, a junctionless transistor with different film thickness of amorphous InGaZnO has been fabricated and it's instability has been analyzed with different film thickness under positive and negative gate stress as well as light illumination. It was found that the threshold voltage shift and the variation of drain current have been increased with decrease of film thickness under the condition of gate stress and light illumination. The reasons for the observed results have been explained by stretched-exponential model and device simulation. Due to the reduced carrier trapping time with decrease of film thickness, electrons and holes can be activated easily. Due to the increase of vertical channel electric field reaching the back interface with decrease of film thickness, more electrons and holes can be accumulated in back interface. When one decides the film thickness for the fabrication of junctionless transistor, the more significant device instability with decrease of film thickness should be consdered.